Exploració per autor "Barajas Ojeda, Enrique"
Ara es mostren els items 16-25 de 25
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Impact of adaptive proactive reconfiguration technique on Vmin and lifetime of SRAM caches
Pouyan, Peyman; Amat Bertran, Esteve; Barajas Ojeda, Enrique; Rubio Sola, Jose Antonio (2014)
Text en actes de congrés
Accés obertThis work presents a test and measurement technique to monitor aging and process variation status of SRAM cells as an aging-aware design technique. We have then verified our technique with an implemented chip. The obtained ... -
Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements
Crespo Yepes, Albert; Ramos Hortal, Regina; Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2021-10-01)
Article
Accés obertIn this work, an ‘on-the-fly’ measurement technique for the monitoring of CMOS inverters performance degradation is presented. This technique allows the characterization of the circuit degradation simultaneously with the ... -
MOSFET degradation dependence on input signal power in a RF power amplifier
Crespo Yepes, Albert; Barajas Ojeda, Enrique; Martin Martínez, Javier; Mateo Peña, Diego; Aragonès Cervera, Xavier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2017-06-25)
Article
Accés obertAging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ... -
MOSFET dynamic thermal sensor for IC testing applications
Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Barajas Ojeda, Enrique; León, Javier; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2016-05-01)
Article
Accés obertThis paper analyses how a single metal-oxide-semiconductor field-effect transistor (MOSFET) can be employed as a thermal sensor to measure on-chip dynamic thermal signals caused by a power-dissipating circuit under test ... -
Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging
Perpinyà, Xavier; Reverter Cubarsí, Ferran; León, Javier; Barajas Ojeda, Enrique; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2018-01-01)
Article
Accés obertThe viability of using off-chip single-shot imaging techniques for local thermal testing in integrated Radio Frequency (RF) power amplifiers (PA’s) is analyzed. With this approach, the frequency response of the output power ... -
Providing an UWB-IR BAN wireless communications network and its application to design a low power transceiver in CMOS technology
Barajas Ojeda, Enrique; Mateo Peña, Diego; González Jiménez, José Luis (Universitat Politècnica de Catalunya, 2010)
Text en actes de congrés
Accés obertUltra Wide-Band (UWB) communication techniques have received increasing attention since United States Federal Communications Commission (FCC) adopted a “First Report and Order” in 2002. Unfortunately the regulations that ... -
Self-calibrating closed-loop circuit for configurable constant voltage thermal anemometers
Gorreta Mariné, Sergio; Barajas Ojeda, Enrique; Kowalski, Lukasz; Atienza García, María Teresa; Domínguez Pumar, Manuel; Jiménez Serres, Vicente (Institution of Electrical Engineers, 2015-09-17)
Article
Accés obertA new circuit is described which applies a configurable voltage across an RTD while the current flowing through it is measured with a current mirror. The circuit also allows working with voltages above the IC supply voltage ... -
Single-MOSFET DC thermal sensor for RF-amplifier central frequency extraction
Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Barajas Ojeda, Enrique; León, Javier; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2017-09-01)
Article
Accés obert© 2017 Elsevier B.V. A DC thermal sensor based on a single metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed to extract high-frequency electrical features of embedded circuits. The MOSFET sensor is ... -
Thermal phase lag heterodyne infrared imaging for current tracking in radio frequency integrated circuits
Perpiñà Gilabet, Xavier; León, Javier; Altet Sanahujes, Josep; Vellvehi, Miquel; Reverter Cubarsí, Ferran; Barajas Ojeda, Enrique; Jordà, Xavier (2017-02-27)
Article
Accés obertWith thermal phase lag measurements, current paths are tracked in a Class A radio frequency (RF) power amplifier at 2 GHz. The amplifier is heterodynally driven at 440 MHz and 2 GHz, and its resulting thermal field was ... -
Using temperature measurements to enhance security in front of hardware trojans
Altet Sanahujes, Josep; Mateo Peña, Diego; Barajas Ojeda, Enrique; Aragonès Cervera, Xavier (2023-06-28)
Report de recerca
Accés obertThe goal of this document is to present a review of the work performed to carry out the task 3.5 of the Spanish National Project PID2019-103869RB-C33, entitled “El Reto de la Variabilidad en NANO-CMOS y BEYOND-CMOS: Nuevos ...