Interconnecting lines with full open defects become floating lines. In nanometric CMOS technologies, gate tunnelling leakage currents impact the behaviour of these lines, which cannot be considered electrically isolated ...

A technique for extracting the electrical and topological parameters of open defects in process monitor lines is presented. The procedure is based on frequency-domain measurements performed at both end points of the ...

The use of Resistive Random Access Memory (RRAM) devices is becoming pervasive in many applications. In particular, security based primitives can exploit their variability and non-volatility for generating cells for ...

Through-silicon vias (TSVs) technology has attracted industry interest as a way to achieve high bandwidth, and short interconnect delays in nanometer three-dimensional integrated circuits (3-D ICs). However, TSVs are ...

Neuromorphic computing offers a promising solution to overcome the von Neumann bottleneck, where the separation between the memory and the processor poses increasing limitations of latency and power consumption. For this ...

The relentless decrease in feature size and the increase of density requirements in Integrated Circuit (IC) manufacturing arise new challenges that must be overcome. One of the most promising alternatives is three-dimensional ...

Resistive random access memories (RRAMs) have arisen as a competitive candidate for non-volatile memories due to their scalability, simple structure, fast switching speed and compatibility with conventional back-end ...

Model-based simulation is one of the effective methods of scientific research. The inherent variability of resistive switching mechanisms has been an obstacle for the massive commercial implementation of the resistive ...