Exploració per autor "Arumi Delgado, Daniel"
Ara es mostren els items 5-24 de 33
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Defective Behaviour of an 8T SRAM Cell with Open Defects
Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Manich Bou, Salvador; Figueras Pàmies, Joan; Di Carlo, Stefano; Prinetto, Paolo; Scionti, Alberto (2010)
Text en actes de congrés
Accés restringit per política de l'editorial -
Design and validation of a platform for electromagnetic fault injection
Balasch, Josep; Arumi Delgado, Daniel; Manich Bou, Salvador (Institute of Electrical and Electronics Engineers (IEEE), 2018)
Text en actes de congrés
Accés obertSecurity is acknowledged as one of the main challenges in the design and deployment of embedded circuits. Devices need to operate on-the-field safely and correctly, even when at physical reach of potential adversaries. One ... -
Diagnosis of full open defects in interconnect lines with fan-out
Arumi Delgado, Daniel; Rodríguez Montañés, Rosa; Figueras Pàmies, Joan; Eichenberger, Stefan; Hora, C.; Kruseman, Bram (IEEE Press. Institute of Electrical and Electronics Engineers, 2010-05-24)
Text en actes de congrés
Accés obertThe development of accurate diagnosis methodologies is important to solve process problems and achieve fast yield improvement. As open defects are common in CMOS technologies, accurate diagnosis of open defects becomes ... -
Diagnosis of full open defects in interconnecting lines
Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Figueras Pàmies, Joan; Eichenberger, Stefan; Hora, Camelia; Kruseman, Bram; Lousberg, M.; Majhi, A.K. (IEEE, 2007-05-31)
Text en actes de congrés
Accés obertA proposal for enhancing the diagnosis of full open defects in interconnecting lines of CMOS circuits is presented. The defective line is first classified as fully opened by means of a logic-based diagnosis tool (Faloc). ... -
Enhanced serial RRAM cell for unpredictable bit generation
Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Gómez-Pau, Álvaro; Manich Bou, Salvador; Bargalló González, Mireia; Campabadal, Francesca (2021-05)
Article
Accés obertIn this letter, the serial configuration of two RRAMs is used as a basic cell to generate an unpredictable bit. The basis of the operation considers starting from the Low Resistive State (LRS) in both devices (initialization ... -
ETS 2022 ORGANIZING COMMITTEE
Manich Bou, Salvador; Rodríguez Montañés, Rosa; Bernardi, Paolo; Tille, Daniel; Mir, Salvador; Bosio, Alberto; Arumi Delgado, Daniel; Gómez Pau, Álvaro; Cassano, Luca; Jiao, Hailong; Miclea, Liviu; Sanchez, Ernesto; Savino, Alessandro; Canal Corretger, Ramon; Eggersglüß, Stephan; Fransi, Sergi; Taouil, Mottaqiallah; Calomarde Palomino, Antonio; Weiner, Michael; Michael, Maria K.; Sonza Reorda, Matteo; Larsson, Erik; Vatajelu, Elena-Ioana; Stratigopoulos, Haralampos-G.; Parisi Baradad, Vicenç; Jiao, Hailong; Huang, Junlin; Li, Huawei; Chillarige, Sameer; Kameyama, Shuichi; Carro, Luigi; Su, Fei; Nicolici, Nicola; Huang, Shi-Yu (2022-05)
Text en actes de congrés
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Gate leakage impact on full open defects in interconnect lines
Arumi Delgado, Daniel; Rodríguez Montañés, Rosa; Figueras Pàmies, Joan; Eichenberger, Stefan; Hora, Camelia; Kruseman, Bram (2011-06)
Article
Accés obertAn Interconnect full open defect breaks the connection between the driver and the gate terminals of downstream transistors, generating a floating line. The behavior of floating lines is known to depend on several factors, ... -
Impact of gate tunnelling leakage on CMOS circuits with full open defects
Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Figueras Pàmies, Joan; Eichenberger, S.; Hora, Camelia; Kruseman, B. (Institution of Electrical Engineers, 2007-10)
Article
Accés obertInterconnecting lines with full open defects become floating lines. In nanometric CMOS technologies, gate tunnelling leakage currents impact the behaviour of these lines, which cannot be considered electrically isolated ... -
Impact of laser attacks on the switching behavior of RRAM devices
Arumi Delgado, Daniel; Manich Bou, Salvador; Gómez Pau, Álvaro; Rodríguez Montañés, Rosa; Montilla, Víctor; Hernández, David; Bargalló González, Mireia; Campabadal, Francesca (2020-01-20)
Article
Accés obertThe ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative ... -
Localization and electrical characterization of interconnect open defects
Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Figueras Pàmies, Joan; Beverloo, Willem; Vries, Dirk K. de; Eichenberger, Stefan; Volf, Paul A. J. (2010-02)
Article
Accés obertA technique for extracting the electrical and topological parameters of open defects in process monitor lines is presented. The procedure is based on frequency-domain measurements performed at both end points of the ... -
Low Cost AES Protection Against DPA Using Rolling Codes
Albiol Perarnau, Pau; Manich Bou, Salvador; Arumi Delgado, Daniel; Rodríguez Montañés, Rosa; Gómez-Pau, Álvaro (Curran Associates, Inc., 2021)
Text en actes de congrés
Accés restringit per política de l'editorialMany block cipher algorithms like AES are known to be weak against differential power analysis attacks (DPA) if the executing unit presents certain levels of information leakage, which is a common problem in microprocessors. ... -
On the fitting and improvement of RRAM stanford-based model parameters using TiN/Ti/HfO2/W experimental data
Mahboubi, Vahab; Arumi Delgado, Daniel; Gómez Pau, Álvaro; Rodríguez Montañés, Rosa; Manich Bou, Salvador (Institute of Electrical and Electronics Engineers (IEEE), 2022)
Comunicació de congrés
Accés restringit per política de l'editorialThe use of Resistive Random Access Memory (RRAM) devices is becoming pervasive in many applications. In particular, security based primitives can exploit their variability and non-volatility for generating cells for ... -
Post-Bond test of through-silicon vias with open defects
Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Figueras Pàmies, Joan (2014)
Text en actes de congrés
Accés restringit per política de l'editorialThrough Silicon Vias (TSVs) are critical elements in three dimensional integrated circuits (3-D ICs) and are susceptible to undergo defects at different stages: during their own fabrication, the bonding stage or during ... -
Postbond test of through-silicon vias with resistive open defects
Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Figueras Pàmies, Joan (2019-07-17)
Article
Accés obertThrough-silicon vias (TSVs) technology has attracted industry interest as a way to achieve high bandwidth, and short interconnect delays in nanometer three-dimensional integrated circuits (3-D ICs). However, TSVs are ... -
Prebond testing of weak defects in TSVs
Arumi Delgado, Daniel; Rodríguez Montañés, Rosa; Figueras Pàmies, Joan (2015-08-07)
Article
Accés restringit per política de l'editorialThrough-silicon vias (TSVs) are critical elements in 3-D integrated circuits susceptible to defects during fabrication and lifetime. It is desirable to detect defective TSVs in the early steps of the fabrication process ... -
Programming techniques of resistive random-access memory devices for neuromorphic computing
Machado Panadés, Pau; Manich Bou, Salvador; Gómez Pau, Álvaro; Rodríguez Montañés, Rosa; Bargalló González, Mireia; Campabadal, Francesca; Arumi Delgado, Daniel (2023-11-27)
Article
Accés obertNeuromorphic computing offers a promising solution to overcome the von Neumann bottleneck, where the separation between the memory and the processor poses increasing limitations of latency and power consumption. For this ... -
Random masking interleaved scrambling technique as a countermeasure for DPA/DEMA attacks in cache memories
Neagu, Mădălin; Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Manich Bou, Salvador (2016-11-15)
Text en actes de congrés
Accés obertMemory remanence in SRAMs and DRAMs is usually exploited through cold-boot attacks and the targets are the main memory and the L2 cache memory. Hence, a sudden power shutdown may give an attacker the opportunity to ... -
Resistive open defect characteritzation in 3D 6T SRAM memories
Castillo, Raúl; Arumi Delgado, Daniel; Rodríguez Montañés, Rosa (2014)
Text en actes de congrés
Accés restringit per política de l'editorialThe relentless decrease in feature size and the increase of density requirements in Integrated Circuit (IC) manufacturing arise new challenges that must be overcome. One of the most promising alternatives is three-dimensional ... -
RRAM based cell for hardware security applications
Arumi Delgado, Daniel; Manich Bou, Salvador; Rodríguez Montañés, Rosa (2016)
Text en actes de congrés
Accés restringit per política de l'editorialResistive random access memories (RRAMs)have arisen as a competitive candidate for non-volatile memories due to their scalability, simple structure, fast switching speed and compatibility with conventional back-end processes. ... -
RRAM Based Random Bit Generation for Hardware Security Applications
Arumi Delgado, Daniel; Rodríguez Montañés, Rosa; Manich Bou, Salvador; Pehl, Michael (Institute of Electrical and Electronics Engineers (IEEE), 2016)
Text en actes de congrés
Accés obertResistive random access memories (RRAMs) have arisen as a competitive candidate for non-volatile memories due to their scalability, simple structure, fast switching speed and compatibility with conventional back-end ...