Ara es mostren els items 13-19 de 19

    • Optoelectronic devices based on evaporated pentacene films 

      Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Martín García, Isidro; Muñoz Cervantes, Delfina; Orpella García, Alberto; Vetter, Michael; Alcubilla González, Ramón (2005-01)
      Article
      Accés restringit per política de l'editorial
      Aluminium/pentacene Schottky diodes have been fabricated on glass substrates. An ohmic, transparent front contact was prepared by sputtering a highly conductive indium–tin-oxide layer. The pentacene layer was evaporated ...
    • Pentacene thin-film transistors on polymeric gate dielectric: device fabrication and electrical characterization 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Vetter, Michael; Alcubilla González, Ramón (2004-06)
      Article
      Accés restringit per política de l'editorial
      Pentacene thin-film transistors using polymethyl methacrylate as a gate dielectric have been fabricated. A bottom gate, inverted staggered structure was selected to study the influence of the dielectric on the device ...
    • Pentacene thin-film transistors with polymeric gate dielectric 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Quidant, Romain; Martín García, Isidro; Vetter, Michael; Alcubilla González, Ramón (2004-06)
      Article
      Accés restringit per política de l'editorial
      Pentacene thin-film transistors have been obtained using polymethyl methacrylate as a gate dielectric. The maximum process temperature was 170 °C, which corresponds to the baking of the polymeric gate dielectric. These ...
    • Pentacene thin-films obtained by thermal evaporation in high vacuum 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Martín García, Isidro; Vetter, Michael; Alcubilla González, Ramón (2003-03)
      Article
      Accés restringit per política de l'editorial
      Pentacene thin-films were obtained by thermal evaporation in high vacuum of a pure (98%) commercially available source. All the samples were grown at room temperature (25 °C) and high deposition rates (>20 Å/s) on Corning ...
    • Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide 

      Orpella García, Alberto; Vetter, Michael; Ferré Tomas, Rafel; Martín García, Isidro; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2005-01)
      Article
      Accés restringit per política de l'editorial
      We propose the use of annealed phosphorus doped amorphous silicon carbide layers (a-SiC:H(n)) deposited by PECVD as emitters in solar cells and explore the effect of the annealing time on the emitter saturation current ...
    • Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films 

      Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Vetter, Michael; Alcubilla González, Ramón; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2003-05)
      Article
      Accés restringit per política de l'editorial
      In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination ...
    • Surface passivation of p-type crystalline Si by plasma enhanced vapour deposited amorphous SiCx Films 

      Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Puigdollers i González, Joaquim; Cuevas, A; Alcubilla González, Ramón (2001-10)
      Article
      Accés restringit per política de l'editorial
      Excellent passivation properties of intrinsic amorphous silicon carbide (a-SiCx:H) films deposited by plasma enhanced chemical vapor deposition on single-crystalline silicon (c-Si) wafers have been obtained. The dependence ...