Ara es mostren els items 8-19 de 19

    • Improvement of crystalline silicon surface passivation by hidrogen plasma treatment 

      Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Kharchenko, A.V.; Roca i Cabarrocas, Pere (American Institute of Physics, 2004-03-01)
      Article
      Accés restringit per política de l'editorial
      A completely dry low-temperature process has been developed to passivate 3.3 Ωcm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just ...
    • Interdigitated laser-contacted solar cell on liquid-phase crystallized silicon on glass 

      Vetter, Michael; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Andrä, Gudrun; Muñoz, David; Molpeceres Alvarez, Carlos (WIP Renewable Energies, 2016)
      Comunicació de congrés
      Accés obert
      10 µm thick liquid-phase crystallized silicon (Si) layers on 3.2 mm Borofloat 33 glass (5cm x 5cm) are fabricated by continuous wave line focus laser (808 nm). A sputtered SiO2/SiON layer stack has been implemented as ...
    • IR-study of a-SiCx:H and a-SiCxNy:H films for c-Si surface passivation 

      Vetter, Michael; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2004-03)
      Article
      Accés restringit per política de l'editorial
      Amorphous intrinsic silicon carbide (a-SiCx:H(i)) films and amorphous silicon carbonitride (SiCxNy:H) films have been deposited by plasma enhanced chemical vapor deposition from CH4/SiH4/(N2) plasma on n-type (1.5 O cm) ...
    • N-Type emitter surface passivaion in C-Si solar cells by means of antireflective amorphous Silicon Carbide layers 

      Ferré Tomas, Rafel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Vetter, Michael; Torres, I; Alcubilla González, Ramón (American Institute of Physics (AIP), 2006-10)
      Article
      Accés restringit per política de l'editorial
      Emitter saturation current densities (JOe) of phosphorus-diffused planar c-Si solar cell emitters passivated by silicon carbide (SiCx) layers have been determined in a wide sheet resistance range (20–500O/sq). Phosphorus ...
    • n-type emitter surface passivation in c-Si solar cells by means of antireflective amorphous silicon carbide layers 

      Ferré Tomas, Rafel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Vetter, Michael; Torres, I.; Alcubilla González, Ramón (American Institute of Physics, 2006-10-05)
      Article
      Accés restringit per política de l'editorial
      Emitter saturation current densities (JOe) of phosphorus-diffused planar c-Si solar cell emitters passivated by silicon carbide (SiCx) layers have been determined in a wide sheet resistance range (20-500 Ω/sp). Phosphorus ...
    • Optoelectronic devices based on evaporated pentacene films 

      Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Martín García, Isidro; Muñoz Cervantes, Delfina; Orpella García, Alberto; Vetter, Michael; Alcubilla González, Ramón (2005-01)
      Article
      Accés restringit per política de l'editorial
      Aluminium/pentacene Schottky diodes have been fabricated on glass substrates. An ohmic, transparent front contact was prepared by sputtering a highly conductive indium–tin-oxide layer. The pentacene layer was evaporated ...
    • Pentacene thin-film transistors on polymeric gate dielectric: device fabrication and electrical characterization 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Vetter, Michael; Alcubilla González, Ramón (2004-06)
      Article
      Accés restringit per política de l'editorial
      Pentacene thin-film transistors using polymethyl methacrylate as a gate dielectric have been fabricated. A bottom gate, inverted staggered structure was selected to study the influence of the dielectric on the device ...
    • Pentacene thin-film transistors with polymeric gate dielectric 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Quidant, Romain; Martín García, Isidro; Vetter, Michael; Alcubilla González, Ramón (2004-06)
      Article
      Accés restringit per política de l'editorial
      Pentacene thin-film transistors have been obtained using polymethyl methacrylate as a gate dielectric. The maximum process temperature was 170 °C, which corresponds to the baking of the polymeric gate dielectric. These ...
    • Pentacene thin-films obtained by thermal evaporation in high vacuum 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Martín García, Isidro; Vetter, Michael; Alcubilla González, Ramón (2003-03)
      Article
      Accés restringit per política de l'editorial
      Pentacene thin-films were obtained by thermal evaporation in high vacuum of a pure (98%) commercially available source. All the samples were grown at room temperature (25 °C) and high deposition rates (>20 Å/s) on Corning ...
    • Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide 

      Orpella García, Alberto; Vetter, Michael; Ferré Tomas, Rafel; Martín García, Isidro; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2005-01)
      Article
      Accés restringit per política de l'editorial
      We propose the use of annealed phosphorus doped amorphous silicon carbide layers (a-SiC:H(n)) deposited by PECVD as emitters in solar cells and explore the effect of the annealing time on the emitter saturation current ...
    • Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films 

      Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Vetter, Michael; Alcubilla González, Ramón; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2003-05)
      Article
      Accés restringit per política de l'editorial
      In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination ...
    • Surface passivation of p-type crystalline Si by plasma enhanced vapour deposited amorphous SiCx Films 

      Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Puigdollers i González, Joaquim; Cuevas, A; Alcubilla González, Ramón (2001-10)
      Article
      Accés restringit per política de l'editorial
      Excellent passivation properties of intrinsic amorphous silicon carbide (a-SiCx:H) films deposited by plasma enhanced chemical vapor deposition on single-crystalline silicon (c-Si) wafers have been obtained. The dependence ...