Exploració per autor "Martín García, Isidro"Més informacióMés informació

Ara es mostren els items 100-117 de 117

    • Silicon heterjunction for advanced rear contact cells: main results of the SHARCC project 

      Desrues, T.; Martín García, Isidro; de Vecchi, S.; Abolmasov, S.; Diouf, D.; Lukyanov, A.; Ortega Villasclaras, Pablo Rafael; Colina Brito, Mónica Alejandra; Versavel, M.; Tuseau, M.; Souche, F.; Nychyporuk, T.; Gueunier-Farret, M.; Muñoz, D.; Lemiti, M.; Kleider, J.P.; Roca i Cabarrocas, P.; Alcubilla González, Ramón; Schlumberger, Y.; Ribeyron, P.J. (2013)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      This paper presents the main results of a research project called SHARCC, focused on rear contacted silicon heterojunction solar cells. Within this project, funded by the French National Research Agency (ANR), different ...

    • Silicon nitride layers for DopLa-IBC solar cells 

      Méndez Puertas, Jesús A.; Martín García, Isidro; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      In this work, we report on the development of silicon nitride (SiNx) layers to be applied to crystalline silicon high-efficiency solar cells. In particular, our research group has developed the concept of Doped by Laser ...

    • Silicon solar cells with heterojunction emitters and laser processed base contacts 

      Jin, Chen; Martín García, Isidro; López Rodríguez, Gema; Harrison, S.; Masmitjà Rusiñol, Gerard; Ortega Villasclaras, Pablo Rafael; Alcubilla González, Ramón (Elsevier, 2017)
      Comunicació de congrés
      Accés obert
      In this work, we report on a novel structure of Interdigitated Back-Contacted (IBC) solar cells on c-Si p-type substrates that combines laser processed homojunction base contacts and silicon heterojunction ...

    • Simultaneous gettering and emitter formation in multicrystalline-Si wafers by annealing phosphorus doped amorphous silicon compounds 

      Ferré, R.; Martín García, Isidro; Trassl, Roland; Alcubilla González, Ramón; Brendel, Rolf (2011-01-10)
      Article
      Accés restringit per política de l'editorial
      We demonstrate gettering of metal impurities in p-type multicrystalline silicon (mc-Si) wafers by annealing wafers that are surface passivated by double layers of amorphous silicon-based compounds acting as gettering sites. ...

    • Status of the EU FP7 HERCULES project: what is the potential of n-type silicon solar cells in europe? 

      Muñoz Cervantes, Delfina; Ribeyron, P.J.; Harrison, S.; Allebe, C.; Descoeudres, A.; Despeisse, M.; Reichel, C.; Glunz, S. W.; Peibst, R.; Merkle, A.; Nielsen, O.; Martín García, Isidro; Mihailetchi, V.; Demaurex, B.; de Wolf, S. (European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), 2016)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      The concept proposed by the HERCULES project is to develop innovative n-type monocrystalline c-Si device structures based on both sides' contacted silicon heterojunction (SHJ) solar cells, on interdigitated back-contact ...

    • Strategies for high fill factor and open-circuit voltage in low-doped c-Ge TPV cells with partially contacted surfaces using 3D simulations 

      Gamel, Mansur Mohammed Ali; Shojaei, David; López Rodríguez, Gema; Garin Escriva, Moises; Martín García, Isidro (2023)
      Comunicació de congrés
      Accés obert
      Dielectric passivated surfaces provide excellent surface recombination properties while point-like contacts are defined to locally extract the current. In this solution, the distance between contacts, or pitch, is critical ...

    • Study of the surface recombination velocity for ultraviolet and visible laser-fired contacts applied to silicon heterojunction solar cells 

      Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; Muñoz Martín, D.; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Molpeceres Alvarez, Carlos; Alcubilla González, Ramón (2015-07-01)
      Article
      Accés obert
      In this study, we investigate the effect of the laser-firing process on the back surface passivation of p-type silicon heterojunction solar cells. For that purpose, two different nanosecond laser sources radiating at ...

    • Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates 

      López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Martín García, Isidro; Colina Brito, Mónica Alejandra; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2013-11-06)
      Article
      Accés obert
      The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization ...

    • Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates 

      López Martí, Gema; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Martín García, Isidro; Colina Brito, Mónica Alejandra; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2013)
      Altres
      Accés restringit per política de l'editorial

    • Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films 

      Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Vetter, Michael; Alcubilla González, Ramón; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2003-05)
      Article
      Accés restringit per política de l'editorial
      In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination ...

    • Surface passivation of p-type crystalline Si by plasma enhanced vapour deposited amorphous SiCx Films 

      Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Puigdollers i González, Joaquim; Cuevas, A; Alcubilla González, Ramón (2001-10)
      Article
      Accés restringit per política de l'editorial
      Excellent passivation properties of intrinsic amorphous silicon carbide (a-SiCx:H) films deposited by plasma enhanced chemical vapor deposition on single-crystalline silicon (c-Si) wafers have been obtained. The dependence ...

    • TCO-free low-temperature p+ emitters for back-junction c-Si solar cells 

      Martín García, Isidro; Coll Valentí, Arnau; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Desrues, Thibaut; Orpella García, Alberto; Alcubilla González, Ramón (Elsevier, 2015-08-28)
      Article
      Accés obert
      In this work, we report on the fabrication and characterization of n-type c-Si solar cells whose p+ emitters are based on laser processed aluminum oxide/silicon carbide (Al2O3/SiCx) films. The p+ emitter is defined at the ...

    • Textured PDMS films applied to thin crystalline silicon solar cells 

      Rosell, Arnau; Martín García, Isidro; Garin Escriva, Moises; López Rodríguez, Gema; Alcubilla González, Ramón (2019-12-18)
      Article
      Accés obert
      Front surface texturization is a standard procedure used to improve optical properties of photovoltaic devices. In some particular cases, such as when dealing with ultrathin substrates, common texturization techniques can ...

    • The origin of emitter-like recombination for inverted c-Si surfaces 

      Martín García, Isidro; Hoex, B; Sanden, M C M van de; Alcubilla González, Ramón; Kessels, W M M (WIP Wirtschaft und Infrastruktur GmbH & Co. Planungs-KG, 2008)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      c-Si samples whose surface passivation is based on highly inverted surfaces experimentally show a decrease in effective lifetime at low illumination levels while a flat dependence is expected from the current theoretical ...

    • Thin IBC c-Si solar cells based on conventional technologies 

      Jin, Chen; Martín García, Isidro; Calle Martín, Eric; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Alcubilla González, Ramón (WIP Renewable Energies, 2016)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      Reducing the wafer thickness for c-Si solar cell fabrication is an effective approach for cost-savings. Interdigitated Back Contacts (IBC) technology is a promising candidate to be applied to thin c-Si substrates due to ...

    • V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells 

      Masmitjà Rusiñol, Gerard; Gerling Sarabia, Luis Guillermo; Ortega Villasclaras, Pablo Rafael; Puigdollers i González, Joaquim; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Royal Society of Chemistry, 2017-04-06)
      Article
      Accés obert
      Over the last few years, transition metal oxide layers have been proposed as selective contacts both for electrons and holes and successfully applied to silicon solar cells. However, better published results need the use ...

    • V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells 

      Masmitjà Rusiñol, Gerard; Gerling Sarabia, Luis Guillermo; Ortega Villasclaras, Pablo Rafael; Puigdollers i González, Joaquim; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Royal Society of Chemistry, 2017-05-21)
      Article
      Accés obert
      Over the last few years, transition metal oxide layers have been proposed as selective contacts both for electrons and holes and successfully applied to silicon solar cells. However, better published results need the use ...

    • Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys 

      Ferre, R; Orpella García, Alberto; Muñoz Cervantes, Delfina; Martín García, Isidro; Recart, F; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Cabarrocas, Roca I P; Alcubilla González, Ramón (2008-03)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiCxNy:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation ...