Laser firing processes have emerged as a technologically feasible approach for the fabrication of local point contacts or local doped regions in advanced high-efficiency crystalline-Si (c-Si) solar cells. In this work, we ...

Liquid phase crystallized (LPC) silicon thin films on glass substrates are a feasible alternative to conventional crystalline silicon (c-Si) wafers for solar cells. Due to substrate limitation, a low-temperature technology ...

Emitter saturation current densities (JOe) of phosphorus-diffused planar c-Si solar cell emitters passivated by silicon carbide (SiCx) layers have been determined in a wide sheet resistance range (20–500O/sq). Phosphorus ...

This paper studies the passivation of industrially textured deep silicon emitters using amorphous silicon carbonitride layers in stack configuration, deposited by plasma enhanced chemical vapor deposition. With this ...

Rear surface of high-efficiency crystalline silicon solar cells is based on a combination of dielectric passivation and point-like contacts. In this work, we develop a 3D model for these devices based on 2.2 Ωcm p-type ...

We report on low-temperature photoluminescence (PL) from aluminum oxide (Al2O3)-passivated c-Si wafers, which surprisingly exhibits clear signature of the formation of the so-called electron-hole liquid (EHL), despite the ...

Laser Firing Contact (LFC) and Laser Doping (LD) have become potential alternatives to the Al BSF thermal processing conventionally used in p-type c-Si solar cell rear contacts. Optimized LFC and LD processes allow, not ...

This paper is focused on the optimization of the rear contact scheme of p-type c-Si LFC-PERC high efficiency solar cells minimizing base ohmic losses without jeopardize rear passivation. This is carried out optimizing on ...

In this work, we further investigate a new strategy to passivate and contact the rear side of p-type c-Si solar cells based on the laser processing of aluminum oxide (Al2O3)/amorphous silicon carbide (SiCx) stacks before ...