Exploració per autor "Martín García, Isidro"Més informacióMés informació

Ara es mostren els items 14-33 de 117

    • c-Si solar cells based on laser-processed dielectric films 

      Martín García, Isidro; Colina Brito, Mónica Alejandra; Coll Valentí, Arnau; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (2014-09)
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      Accés restringit per política de l'editorial
      This paper shows an innovative and low temperature fabrication technology for crystalline silicon (c-Si) solar cells where the highly-doped regions are punctually defined through laser processed dielectric films. ...

    • Células fotovoltaicas con un rendimiento del 20.5% 

      Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (Grupo Acorde Comunicación (GAC), 2011-03-01)
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      Accés restringit per política de l'editorial
      Un grupo de investigadores de la Universitat Politècnica de Catalunya (UPC) han desarrollado un proceso de fabricación que permite obtener rendimientos de conversión fotovoltaicos del 20,5%. Esto supone una mejora sustancial ...

    • Characterization of a-Si:H/c-Si interfaces by effective-lifetime measurements 

      Garin Escriva, Moises; Rau, U; Bredle, W; Martín García, Isidro; Alcubilla González, Ramón (American Institute of Physics (AIP), 2005-11)
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      Accés restringit per política de l'editorial
      This article studies theoretically and experimentally the recombination at the amorphous/crystalline silicon interface of a heterojunction with intrinsic thin layer (HIT) structure without metallization. We propose a ...

    • Charge trapping control in MOS capacitors 

      Domínguez Pumar, Manuel; Bheesayagari, Chenna Reddy; Gorreta Mariné, Sergio; López Rodríguez, Gema; Martín García, Isidro; Blokhina, Elena; Pons Nin, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2016-12-26)
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      Accés obert
      This paper presents an active control of C-V characteristic for MOS capacitors based on Sliding Mode control and sigma-delta-modulation. The capacitance of the device at a certain voltage is measured periodically and ...

    • “Cold” process for IBC c-Si solar cells fabrication 

      López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Voz Sánchez, Cristóbal; Orpella García, Alberto; Alcubilla González, Ramón (Elsevier, 2016)
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    • Crystalline silicon solar cells beyond 20% efficiency 

      Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (IEEE Press. Institute of Electrical and Electronics Engineers, 2011)
      Text en actes de congrés
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      —This paper describes a fabrication process to obtain high efficiency c-Si cells (> 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have ...

    • Crystalline silicon surface passivation by amorphous silicon carbide films 

      Vetter, Michael; Martín García, Isidro; Ferré Tomas, Rafel; Garin Escriva, Moises; Alcubilla González, Ramón (2006-10)
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      Accés restringit per política de l'editorial
      This article reviews the surface passivation of n- and p-type crystalline silicon by hydrogenated amorphous silicon carbide films, which provide surface recombination velocities in the range of 10 cm s-1. Films are deposited ...

    • Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition 

      Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (American Institute of Physics (AIP), 2005-12)
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      Accés restringit per política de l'editorial
      Surface-passivating properties of hydrogenated amorphous silicon carbide films(a-SiCx:H)(a-SiCx:H)deposited by plasma-enhanced chemical-vapor deposition on both pp- and nn-type crystalline silicon(c-Si)(c-Si) have been ...

    • Development of LASER fired contacts on silicon heterojunction solar cells for the application to rear contact structures 

      Muñoz Cervantes, Delfina; Desrues, T.; Ribeyron, P.J.; Orpella García, Alberto; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2010-04)
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      Accés restringit per política de l'editorial
      In this work, we present our progress in contacting both doped and undoped a-Si:H layers using a LASER tool and show some applications for three different HJ solar cell designs: standard (p-type), rear emitter (n-type) and ...

    • Direct etching at the nanoscale through nanoparticle-directed capillary condensation 

      Garín, Moisés; Khoury, Rasha; Martín García, Isidro; Johnson, Erik (2020-04-28)
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      Accés obert
      We report a method to locally deliver a chemical etchant at the nanoscale in the vapor phase by capillary condensation forming a meniscus at the nanoparticle/substrate interface. The process is simple, scalable and does ...

    • DopLa solar cells with texturized front surface 

      Martín García, Isidro; Coll Valentí, Arnau; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; López González, Juan Miguel; Alcubilla González, Ramón (Elsevier, 2016)
      Text en actes de congrés
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      In this work, we report on improving efficiency of DopLa cells fabricated on p-type substrates. This type of solar cells has all the highly-doped regions based on laser doping from dielectric films resulting in a very ...

    • DopLaCell: a new c-Si solar cell based on laser processing of dielectric films 

      Martín García, Isidro; López González, Juan Miguel; Colina Brito, Mónica Alejandra; Orpella García, Alberto; Alcubilla González, Ramón (2013)
      Text en actes de congrés
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      In this paper we introduce a new crystalline silicon (c-Si) solar cell fabrication technology based on the laser processing of dielectric films to create all the highly-doped regions. We call it DopLaCell (Doped by Laser ...

    • Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface 

      Ferré Tomas, Rafel; Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Alcubilla González, Ramón (American Institute of Physics, 2005-11-09)
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      Accés restringit per política de l'editorial
      Surface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer ...

    • Effect of nanofluid conductivity and humidity on the self-assembly of colloidal crystals by means of electrospray 

      Coll Valentí, Arnau; Bermejo Broto, Sandra; Martín García, Isidro; Castañer Muñoz, Luis María (Institute of Electrical and Electronics Engineers (IEEE), 2015)
      Comunicació de congrés
      Accés obert

    • Effect of nanofluid conductivity and humidity on the self-assembly of nanoparticles deposited by electrospray 

      Coll Valentí, Arnau; Bermejo, Sandra; Martín García, Isidro; Castañer Muñoz, Luis María (Institute of Electrical and Electronics Engineers (IEEE), 2015)
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      Electrospray technique has been used in previous works as an excellent way to develop ordered nanostructures. This work focuses on the necessary conditions to achieve 3D nano-ordered layers, which are mainly determined by ...

    • Effect of the thickness of amorphous silicon carbide interlayer on the passivation of c-Ge surface by aluminium oxide films 

      Martín García, Isidro; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim (Elsevier, 2022-07)
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      Accés restringit per política de l'editorial
      Surface passivation is of paramount importance in photovoltaic devices based on high-quality crystalline absorbers such as crystalline germanium (c-Ge). In this work, we report on the surface passivation of p-type c-Ge by ...

    • Effects of photon reabsorption phenomena in confocal micro-photoluminescence measurements in crystalline silicon 

      Roige, Abel; Alvarez, J.; Jaffre, A.; Desrues, T.; Martín García, Isidro; Alcubilla González, Ramón; Kleider, J.P. (American Institute of Physics (AIP), 2017-02-14)
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      Accés obert
      Confocal micro-photoluminescence (PL) spectroscopy has become a powerful characterization technique for studying novel photovoltaic (PV) materials and structures at the micrometer level. In this work, we present a comprehensive ...

    • Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Alcubilla González, Ramón (2004-11)
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      Accés restringit per política de l'editorial
      Pentacene thin films obtained by thermal evaporation at room temperature have been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). The dielectric was spin-cast polymethyl methacrylate (PMMA) ...

    • Electron selective contacts based on Al2O3/TiO2/ZnO stacks for crystalline silicon solar cells 

      Zafoschnig, Lisa; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Masmitjà Rusiñol, Gerard; López Rodríguez, Gema; Alcubilla González, Ramón (2018)
      Comunicació de congrés
      Accés restringit per política de l'editorial
      In the last years, our research group has focused on the development of Interdigitated Back Contacted (IBC) solar cells based on transition metal oxides. In particular, a very thin Al2O3/TiO2 stack deposited by ALD has ...

    • Electronic properties of intrinsic and doped amorphous silicon carbide films 

      Vetter, Michael; Voz Sánchez, Cristóbal; Ferré Tomas, Rafel; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Andreu Batallé, Jordi; Alcubilla González, Ramón (2006-07)
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      Accés restringit per política de l'editorial
      Hydrogenated amorphous silicon carbide (a-SiCx : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was ...