Exploració per autor "Voz Sánchez, Cristóbal"
Ara es mostren els items 146-150 de 150
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Ultrathin a-Si:H/Oxide transparent solar cells exhibiting UV-Blue selective-like absorption
Lopez-Garcia, Alex J.; Voz Sánchez, Cristóbal; Asensi López, José Miguel; Puigdollers i González, Joaquim; Izquierdo Roca, Víctor; Perez Rodriguez, Alejandro (John Wiley & sons, 2023-02-15)
Article
Accés obertHerein, the fabrication of transparent solar cells based on nanometric (8 and30 nm) intrinsic hydrogenated amorphous siliconfilms (a-Si:H) and using oxidethinfilms as transparent carrier selective contacts are reported. ... -
Ultrathin wide-bandgap a-Si:H-based solar cells for transparent photovoltaic applications
Lopez-Garcia, Alex J.; Blazquez, Oriol; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Izquierdo Roca, Víctor; Perez Rodriguez, Alejandro (Wiley, 2022-01-01)
Article
Accés obertHerein, the fabrication of UV-blue selective transparent solar cells based on ultrathin (<30¿nm) intrinsic hydrogenated amorphous silicon films (a-Si:H) as absorber and using a fully inorganic architecture is reported, ... -
V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells
Masmitjà Rusiñol, Gerard; Gerling Sarabia, Luis Guillermo; Ortega Villasclaras, Pablo Rafael; Puigdollers i González, Joaquim; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Royal Society of Chemistry, 2017-04-06)
Article
Accés obertOver the last few years, transition metal oxide layers have been proposed as selective contacts both for electrons and holes and successfully applied to silicon solar cells. However, better published results need the use ... -
V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells
Masmitjà Rusiñol, Gerard; Gerling Sarabia, Luis Guillermo; Ortega Villasclaras, Pablo Rafael; Puigdollers i González, Joaquim; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Royal Society of Chemistry, 2017-05-21)
Article
Accés obertOver the last few years, transition metal oxide layers have been proposed as selective contacts both for electrons and holes and successfully applied to silicon solar cells. However, better published results need the use ... -
Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys
Ferre, R; Orpella García, Alberto; Muñoz Cervantes, Delfina; Martín García, Isidro; Recart, F; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Cabarrocas, Roca I P; Alcubilla González, Ramón (2008-03)
Article
Accés restringit per política de l'editorialHydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiCxNy:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation ...