Ara es mostren els items 124-143 de 150

    • Rear contact pattern optimization based on 3D simulations for IBC solar cells with point-like doped contacts 

      Carrió Díaz, David; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; López Rodríguez, Gema; López González, Juan Miguel; Orpella García, Alberto; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2014-09)
      Article
      Accés restringit per política de l'editorial
      In this work 3D simulations are used to study the impact of technological parameters on device performance of c-Si interdigitated back-contacted IBC solar cells with point-like doped contacts. In these cells, the highly-doped ...
    • Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under 

      Mora-Seró, I; Luo, Y; Garcia Belmonte, G; Bisquert, J; Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2007-12)
      Article
      Accés restringit per política de l'editorial
      Impedance spectroscopy (at forward bias and under illumination) of solar cells comprised thin hydrogenated amorphous silicon (a-Si:H) films deposited on crystalline silicon (c-Si) wafers was analyzed in terms of ac equivalent ...
    • Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing 

      Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López Rodríguez, Gema; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (2014-01-31)
      Article
      Accés restringit per política de l'editorial
      The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive ...
    • Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing 

      Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López, Gema; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (2013)
      Comunicació de congrés
      Accés restringit per política de l'editorial
    • Restraints in low dimensional organic semiconductor devices at high current densities 

      Pfattner, Raphael; Moreno Sierra, César; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Rovira, Concepció; Puigdollers i González, Joaquim; Mas Torrent, Marta (2014-01)
      Article
      Accés restringit per política de l'editorial
      The understanding of the charge carrier transport in electronic materials is of crucial interest for the design of efficient devices including especially the restraints that arise from device miniaturization. In this work ...
    • Satisfying both interfacial- and bulk requirements for organic photovoltaics: Bridged-triphenylamines with extended p-conjugated systems as efficient new molecules 

      Simokaitiene, Jurate; Cekaviciute, Monika; Volyniuk, Dmytro; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim (2019-05-31)
      Article
      Accés obert
      In the domain of organic photovoltaic (OPV) devices, the design of new materials faces the extraordinary challenge to satisfy two opposite requirements: the new materials should exhibit weak intermolecular interactions at ...
    • Selected problems in semiconductor physics and electronic devices 

      Alcubilla González, Ramón; Voz Sánchez, Cristóbal (Universitat Politècnica de Catalunya, 2019)
      Problema, exercici
      Accés obert
    • Shedding light on the negative differential resistance effect observed in organic thin-film transistors 

      Ros Costals, Eloi; Reig Canyelles, Marta; Voz Sánchez, Cristóbal; Bagdziunas, Gintautas; Ortega Villasclaras, Pablo Rafael; Velasco Castrillo, Maria Dolores; Puigdollers i González, Joaquim (2020-05-05)
      Article
      Accés obert
      Organic semiconductor electronics has the potential to become a solid and industrially feasible technology, with new and stimulating applications such as the flexible and transparent electronic devices. However, organic ...
    • Stability of hidrogenated nanocrystalline silicon thin-film transistors 

      Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Dosev, D; Fonrodona, Marta; Soler Vilamitjana, David; Bertomeu Balaguero, Joan; Asensi, J M; Andreu Batallé, Jordi; Alcubilla González, Ramón (2001-09)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over ...
    • Straightforward determination of the effective mobility-lifetime product of small molecule organic solar cells 

      Gerling Sarabia, Luis Guillermo; Mahato, S; Galindo Lorente, Sergi; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Asensi, J.M. (Institute of Electrical and Electronics Engineers (IEEE), 2015)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      The effective mobility-lifetime product, a figure of merit for charge carrier transport in a photovoltaic device, was determined for small-molecule bulk heterojunction organic solar cells by means of a simplified methodology ...
    • Straightforward determination of the effective mobility-lifetime products of small molecule organic solar cells 

      Gerling Sarabia, Luis Guillermo; Mahato, S; Galindo Lorente, Sergi; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Asensi, J.M. (Institute of Electrical and Electronics Engineers (IEEE), 2015)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      The effective mobility-lifetime product, a figure of merit for charge carrier transport in a photovoltaic device, was determined for small-molecule bulk heterojunction organic solar cells by means of a simplified methodology ...
    • Study of a thiophene-based polymer for optoelectronic applicartions 

      Cheylan, Stephanie; Fraleoni-Morgera, A; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Settin, L; Alcubilla González, Ramón; Badenes, G; Costa-Bizzarri, P; Lanzi, M (2006-01)
      Article
      Accés restringit per política de l'editorial
      A thiophene-based conjugated polymer bearing a cyano group (–CN) as a side chain substituent was successfully synthesized. The polymer evidences an excellent filmability from various organic solvents as well as an enhanced ...
    • Study of the surface recombination velocity for ultraviolet and visible laser-fired contacts applied to silicon heterojunction solar cells 

      Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; Muñoz Martín, D.; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Molpeceres Alvarez, Carlos; Alcubilla González, Ramón (2015-07-01)
      Article
      Accés obert
      In this study, we investigate the effect of the laser-firing process on the back surface passivation of p-type silicon heterojunction solar cells. For that purpose, two different nanosecond laser sources radiating at ...
    • Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells 

      Almora, Osbel; Gerling Sarabia, Luis Guillermo; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Puigdollers i González, Joaquim; Garcia-Belmonte, Germà (2017-08-01)
      Article
      Accés obert
      Transition metal oxides (TMOs) have recently been proved to efficiently serve as hole-selective contacts in crystalline silicon (c-Si) heterojunction solar cells. In the present work, two TMO/c-Si heterojunctions are ...
    • Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates 

      López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Martín García, Isidro; Colina Brito, Mónica Alejandra; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2013-11-06)
      Article
      Accés obert
      The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization ...
    • Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates 

      López Martí, Gema; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Martín García, Isidro; Colina Brito, Mónica Alejandra; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2013)
      Altres
      Accés restringit per política de l'editorial
    • Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films 

      Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Vetter, Michael; Alcubilla González, Ramón; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2003-05)
      Article
      Accés restringit per política de l'editorial
      In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination ...
    • Thin film transistors obtained by hot wire CVD 

      Puigdollers i González, Joaquim; Orpella García, Alberto; Dosev, D; Voz Sánchez, Cristóbal; Peiró, D; Pallarés, J; Marsal, L F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2000-05)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated microcrystalline silicon films obtained at low temperature (150–280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) ...
    • Thin-film transistors with polymorphous silicon active layer 

      Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Orpella García, Alberto; Alcubilla González, Ramón; Fontcuberta Morral, Anna; Tripathi, V; Roca, P (2002-04)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated silicon thin films were obtained by plasma enhanced chemical vapour deposition under plasma conditions close to the formation of powder. By that means microcrystalline, polymorphous and amorphous silicon layers ...
    • Transition metal oxides as hole-selective contacts in silicon heterojunctions solar cells 

      Gerling Sarabia, Luis Guillermo; Mahato, Somnath; Morales-Vilches, Ana Belén; Masmitjà Rusiñol, Gerard; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Puigdollers i González, Joaquim (2016-02-02)
      Article
      Accés obert
      This work reports on a comparative study comprising three transition metal oxides, MoO3, WO3 and V2O5, acting as front p-type contacts for n-type crystalline silicon heterojunction solar cells. Owing to their high work ...