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Ara es mostren els items 77-96 de 150

    • Laboratori d'Electrònica i de Física 

      Prat Viñas, Lluís; Benadero García-Morato, Luis; Orpella García, Alberto; Turó Peroy, Antonio; Voz Sánchez, Cristóbal (Universitat Politècnica de Catalunya, 2009)
      Pràctica
      Accés obert

    • Laboratori d'electrònica i física 

      Prat Viñas, Lluís; Benadero García-Morato, Luis; Orpella García, Alberto; Turó Peroy, Antonio; Voz Sánchez, Cristóbal (Universitat Politècnica de Catalunya, 2009)
      Apunts
      Accés obert

    • Large Stokes shift downshifting Eu(III) films as efficiency enhancing UV blocking layers for dye sensitized solar cells 

      Kennedy, M.; Ahmed, H.; Doran, J.; Norton, B.; Daren, S.; Galindo Lorente, Sergi; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim (2015-01-01)
      Article
      Accés obert
      Large Stokes shift downshifting organolanthanide complex, Eu(tta)(3)phen, is examined for inclusion in polymeric layers to replace the UV blocking layer in dye sensitized solar cell (DSSC) technology. The UV blocking layer ...

    • Laser fired contacts on amorphous silicon deposited by hot-wire cvd on crystalline silicon 

      Blanque, S; Voz Sánchez, Cristóbal; Muñoz Cervantes, Delfina; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Alcubilla González, Ramón (WIP Wirtschaft und Infrastruktur GmbH & Co. Planungs-KG, 2008)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated ...

    • Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells 

      Colina Brito, Mónica Alejandra; Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Alcubilla González, Ramón (2015-05-01)
      Article
      Accés obert
      In this work the Laser Induced Forward Transfer (LIFT) technique is investigated to create n-doped regions on p-type c-Si substrates. The precursor source of LIFT consisted in a phosphorous-do ...

    • Laser processes for contact optimization in c-Si solar cells 

      Molpeceres Alvarez, Carlos; Muñoz Martín, D.; Sánchez Aniorte, M. Isabel; Morales Furio, Miguel; Colina Brito, Mónica Alejandra; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2013)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      Solid State Lasers (SSL) have been used in microelectronic and photovoltaic (PV) industry for decades but, currently, laser technology appears as a key enabling technology to improve efficiency and to reduce production ...

    • Laser-fired contact optimization in c-Si solar cells 

      Alcubilla González, Ramón; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Martín García, Isidro; Colina, M.; López Rodríguez, Gema; Voz Sánchez, Cristóbal; Sánchez, Isabel; Molpeceres, Carlos (2011-04-15)
      Article
      Accés restringit per política de l'editorial
      In this work we study the optimization of laser-fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process ...

    • LIFT front-contact metallization of silicon solar cells 

      Canteli, David; Muñoz García, Cristina; Ortega Villasclaras, Pablo Rafael; Ros Costals, Eloi; Morales, Miguel; Lauzurica, Sara; Voz Sánchez, Cristóbal; Molpeceres Alvarez, Carlos (2021-08)
      Article
      Accés obert
      Laser-Induced Forward Transfer (LIFT) is a very versatile technique, allowing the selective transfer of a wide range of materials with no contact and high accuracy. This work includes the analysis of heterojunction silicon ...

    • Low recombination n+ regions created by n+ c-Si epitaxial layers and laser processing of phosphorus-doped SiCx films 

      Martín García, Isidro; Colina Brito, Mónica Alejandra; Orpella García, Alberto; Voz Sánchez, Cristóbal; De Vecchi, S.; Desrues, T.; Abolmasov, S.; Roca i Cabarrocas, P.; Alcubilla González, Ramón (2012)
      Text en actes de congrés
      Accés restringit per política de l'editorial

    • Low surface recombination in silicon-heterojunction solar cells with rear laser-fired contacts from aluminum foils 

      Colina Brito, Mónica Alejandra; Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Alcubilla González, Ramón (2015-05-01)
      Article
      Accés obert
      In this study, an approach to create laser-fired contacts from aluminum foils is studied on p-type silicon-heterojunction solar cells. This alternative approach consists of the use of aluminum foils instead of evaporated ...

    • Low temperature back-surface-field contacts deposited by hot-wire CVD for heterojunction solar cells 

      Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Alcubilla González, Ramón; Villar, F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Roca-I-Cabarrocas, P (2008-08)
      Article
      Accés obert
      The growing interest in using thinner wafers (< 200 µm) requires the development of low temperature passivation strategies for the back contact of heterojunction solar cells. In this work, we investigate low temperature ...

    • Low-cost high-sensitive suns-Voc measurement instrument to characterize c-Si solar cells 

      Ortega Villasclaras, Pablo Rafael; Piñol, Juan M.; Martín García, Isidro; Orpella García, Alberto; Masmitjà Rusiñol, Gerard; López Rodríguez, Gema; Ros Costals, Eloi; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2020-09-01)
      Article
      Accés obert
      Measuring open-circuit voltage (Voc) vs. light intensity (Suns) in solar cells permits the access of cell performance without the series resistance effect. This work shows the implementation of a Suns-Voc measurement system ...

    • Lumogen violet dye as luminiscent down-shifting layer for C-silicon solar cells 

      Ahmed, H.; Kennedy, M.; Confrey, T.; Doran, J.; McCormack, S.J.; Galindo Lorente, Sergi; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim (2012)
      Comunicació de congrés
      Accés restringit per política de l'editorial
      In this investigation Naphtalimide based Lumogen Violet organic dye [BASF] is characterized for inclusion in luminescent downshifting (LDS) layers. A PV device made up of an LDS layer of Lumogen Violet deposited on top ...

    • Main properties of Al2O3 thin films deposited by magnetron sputtering of an Al2O3 ceramic target at different radio-frequency power and argon pressure and their passivation effect on p-type c-Si wafers 

      García Valenzuela, J. A.; Rivera, R.; Morales Vilches, Ana Belén; Gerling Sarabia, Luis Guillermo; Caballero Lorenzo, Álvaro; Asensi López, José Miguel; Voz Sánchez, Cristóbal; Bertomeu Balagueró, Joan; Andreu Batallé, Jordi (2016-11-30)
      Article
      Accés obert
      In this work, 50-nm thick Al2O3 thin films were deposited at room temperature by magnetron sputtering from an Al2O3 ceramic target at different RF power and argon pressure values. The sputtering technique could be preferred ...

    • Microcrystalline silicon thin film transistors obtained by hot-wire CVD 

      Puigdollers i González, Joaquim; Dosev, D; Orpella García, Alberto; Voz Sánchez, Cristóbal; Peiro, D; Bertomeu Balaguero, Joan; Marsal, L F; Pallarés, J; Andreu Batallé, Jordi; Alcubilla González, Ramón (1999-12)
      Article
      Accés restringit per política de l'editorial
      Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques ...

    • Microscale characterization of surface recombination at the vicinity of laser-processed regions in c-Si solar cells 

      Roige, A; Osso, J.O; Martín García, Isidro; Voz Sánchez, Cristóbal; Ortega Villasclaras, Pablo Rafael; López González, Juan Miguel; Alcubilla González, Ramón; Vega, L. F (2016-03-01)
      Article
      Accés obert
      Laser firing processes have emerged as a technologically feasible approach for the fabrication of local point contacts or local doped regions in advanced high-efficiency crystalline-Si (c-Si) solar cells. In this work, we ...

    • Model for the charge carrier collection in organic small-molecule solar cells 

      Galindo Lorente, Sergi; Ahmadpour Sayyar, Mehrad; Voz Sánchez, Cristóbal; Asensi, J.M.; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2013)
      Comunicació de congrés
      Accés restringit per política de l'editorial

    • Multicrystalline silicon thin-film solar cells based on vanadium oxide heterojunction and laser-doped contacts 

      Martín García, Isidro; López Rodríguez, Gema; Plentz, Jonathan; Jin, Chen; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Gawlik, Annet; Jia, Guobin; Andrä, Gudrun (2019-10)
      Article
      Accés obert
      Liquid phase crystallized (LPC) silicon thin films on glass substrates are a feasible alternative to conventional crystalline silicon (c-Si) wafers for solar cells. Due to substrate limitation, a low-temperature technology ...

    • N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks 

      Orpella García, Alberto; Blanqué, Servane; Roiati, V.; Martín García, Isidro; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
      Text en actes de congrés
      Accés obert
      This paper studies the passivation of industrially textured deep silicon emitters using amorphous silicon carbonitride layers in stack configuration, deposited by plasma enhanced chemical vapor deposition. With this ...

    • N-type PTCDI¿C13H27 thin-film transistors deposited at different substrate temperature 

      Puigdollers i González, Joaquim; Pirriera, Della M; Marsal Vinade, Albert; Orpella García, Alberto; Cheylan, Stephanie; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2009-10)
      Article
      Accés restringit per política de l'editorial
      N-type organic thin-film transistors based on N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide have been fabricated by thermal evaporation at different substrate temperatures. The best device was obtained at 120 ...