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Ara es mostren els items 21-40 de 150

    • Copper phthalocyanine thin filma transistors with polymeric gate dielectric 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Fonrodona, Marta; Cheylan, Stephanie; Stella, M; Andreu Batallé, Jordi; Vetter, Michael; Alcubilla González, Ramón (2006-06)
      Article
      Accés restringit per política de l'editorial
      Copper phthalocyanine (CuPc) thin-film transistors have been fabricated using polymethyl methacrylate (PMMA) as gate dielectric. A bottom gate, staggered structure was selected to study the device performance. CuPc thin-films ...

    • Crystalline silicon solar cells beyond 20% efficiency 

      Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (IEEE Press. Institute of Electrical and Electronics Engineers, 2011)
      Text en actes de congrés
      Accés obert
      —This paper describes a fabrication process to obtain high efficiency c-Si cells (> 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have ...

    • Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition 

      Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (American Institute of Physics (AIP), 2005-12)
      Article
      Accés restringit per política de l'editorial
      Surface-passivating properties of hydrogenated amorphous silicon carbide films(a-SiCx:H)(a-SiCx:H)deposited by plasma-enhanced chemical-vapor deposition on both pp- and nn-type crystalline silicon(c-Si)(c-Si) have been ...

    • Defect states assisted charge conduction in Au/MoO3¿x/n-Si Schottky barrier diode 

      Mahato, Somnath; Voz Sánchez, Cristóbal; Biswas, Debaleen; Puigdollers i González, Joaquim; Bhunia, Satyaban (Institute of Physics (IOP), 2018-12-07)
      Article
      Accés obert
      Role of defect states of thermally evaporated molybdenum trioxide (MoO3-x) on electrical conductivity was investigated via low temperature current–voltage and capacitance–voltage measurements. To clarify the charge transport ...

    • Density-of-states in pentacene from the electrical characteristics of thin-film transistors 

      Puigdollers i González, Joaquim; Marsal Vinade, Albert; Cheylan, Stephaie; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2010-08)
      Article
      Accés restringit per política de l'editorial
      In this work the density-of-states in the gap of pentacene is calculated from the electrical characteristics of thin-film transistors measured at different temperatures. The density-of-states after a thermal annealing in ...

    • Deoxyribonucleic acid-based electron selective contact for crystalline silicon solar cells 

      Tom, Thomas; Ros Costals, Eloi; Rovira, David; Lopez Vidrier, Julià; Asensi López, José Miguel; Ortega Villasclaras, Pablo Rafael; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Bertomeu Balagueró, Joan (Wiley, 2023-02-10)
      Article
      Accés obert
      Development of carrier selective contacts for crystalline silicon solar cells has been recently of great interest toward the further expansion of silicon photovoltaics. The use of new electron and hole selective layers has ...

    • Deposition and characterisation of sputtered molybdenum oxide thin films with hydrogen atmosphere 

      López-Pintó, Nicolau; Tom, Thomas; Bertomeu Bo, Joan; Asensi López, José Miguel; Ros Costals, Eloi; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal (2021-10)
      Article
      Accés obert
      Sputtered films of reduced molybdenum oxide (MoOx) with a molybdenum trioxide target in different pressures and atmospheres were deposited in varying temperatures. Compositional, optic, and electric characteristics of the ...

    • Development of LASER fired contacts on silicon heterojunction solar cells for the application to rear contact structures 

      Muñoz Cervantes, Delfina; Desrues, T.; Ribeyron, P.J.; Orpella García, Alberto; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2010-04)
      Article
      Accés restringit per política de l'editorial
      In this work, we present our progress in contacting both doped and undoped a-Si:H layers using a LASER tool and show some applications for three different HJ solar cell designs: standard (p-type), rear emitter (n-type) and ...

    • Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD 

      Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Blanqué, Servane; Ibarz, D; Bertomeu Balaguero, Joan; Alcubilla González, Ramón (2009-03)
      Article
      Accés restringit per política de l'editorial
      In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated ...

    • Effect of buffer layer on minority carrier lifetime and series resistance of bifacial heterojunction silicon solar cells analyzed by impedance spectroscopy 

      Garcia Belmonte, G; García Cañadas, J; Mora-Seró, I; Bisquert, J; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2006-07)
      Article
      Accés restringit per política de l'editorial
      By combining information on solar cell layer structure and electrical response analyzed by impedance spectroscopy, relevant knowledge is obtained about photogenerated carriers recombination and extraction. The inclusion ...

    • Effect of permanent dipole layers in the electrical characteristics of electronic devices and solar cells 

      Ros Costals, Eloi; Pusay Villarroel, Benjamín Andrés; Almache Hernández, Rosa Estefanía; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim (2019)
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    • Effect of the thickness of amorphous silicon carbide interlayer on the passivation of c-Ge surface by aluminium oxide films 

      Martín García, Isidro; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim (Elsevier, 2022-07)
      Article
      Accés restringit per política de l'editorial
      Surface passivation is of paramount importance in photovoltaic devices based on high-quality crystalline absorbers such as crystalline germanium (c-Ge). In this work, we report on the surface passivation of p-type c-Ge by ...

    • Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Alcubilla González, Ramón (2004-11)
      Article
      Accés restringit per política de l'editorial
      Pentacene thin films obtained by thermal evaporation at room temperature have been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). The dielectric was spin-cast polymethyl methacrylate (PMMA) ...

    • Electronic properties of intrinsic and doped amorphous silicon carbide films 

      Vetter, Michael; Voz Sánchez, Cristóbal; Ferré Tomas, Rafel; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Andreu Batallé, Jordi; Alcubilla González, Ramón (2006-07)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated amorphous silicon carbide (a-SiCx : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was ...

    • Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Martín García, Isidro; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2002-04)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors ...

    • Emitter formation using laser doping technique on n- and p-type c-Si substrates 

      López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Colina Brito, Mónica Alejandra; Voz Sánchez, Cristóbal; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2015-05-01)
      Article
      Accés obert
      In this work laser doping technique is used to create highly-doped regions defined in a point-like structure to form n+/p and p+/n junctions applying a pulsed Nd-YAG 1064 nm laser in the n ...

    • Engineering redox active sites enriched 3D-on-2D bimetallic double layered hydroxide electrode for supercapatteries 

      Pugalenthiyar, Thondaiman; Justin Raj, Chellan; Velayutham, Rajavel; Dennyson Savariraj, Antonysamy; Manikandan, Ramu; Voz Sánchez, Cristóbal; Chul Kim, Byung (2022-10)
      Article
      Accés restringit per política de l'editorial
      The functionalization of structural nanoengineered battery-type electrodes has aided the emergence of supercapattery (SCp) subclass, which enables a wide range of applications. Herein, our research work provides a platform ...

    • Ephocell project: smart light collecting system for the efficiency enhancement of solar cells - ray trace modeling of system 

      Aubouy, Laurent; Gutiérrez-Tauste, D.; Della Pirriera, Monica; Noriega, G.; Di Lorenzo, M.L.; Avella, M.; Errico, M.E.; Gentile, G.; Kennedy, M.; Doran, J.; Norton, B.; Ahmed, H.; Baluschev, S.; Bistué Guardiola, J.; Hervera, F.; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Daren, S.; Solomon-Tsvetkov, F.; Pashov, A. (2012)
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      PV cell efficiency is limited partly due to the spectral mismatch between the solar spectrum and the PV absorption properties. PV conversion efficiency is enhanced by external modulation of the incident irradiance, by means ...

    • Examen Final 

      Ortega Villasclaras, Pablo Rafael; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal (Universitat Politècnica de Catalunya, 2021-01-05)
      Examen
      Accés restringit a la comunitat UPC

    • Examen Final 

      Prat Viñas, Lluís; Ortega Villasclaras, Pablo Rafael; López González, Juan Miguel; Martín García, Isidro; Fernández, Mireia; Bermejo Broto, Sandra; Altet Sanahujes, Josep; Puigdollers i González, Joaquim; Rodriguez, Angel; Voz Sánchez, Cristóbal (Universitat Politècnica de Catalunya, 2015-01-16)
      Examen
      Accés restringit a la comunitat UPC