Ara es mostren els items 101-120 de 122

    • On evaluating temperature as observable for CMOS technology variability 

      Altet Sanahujes, Josep; Gómez Salinas, Dídac; Dufis, Cédric Yvan; González Jiménez, José Luis; Mateo Peña, Diego; Aragonès Cervera, Xavier; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (2010-05-26)
      Text en actes de congrés
      Accés obert
      The temperature at surface of a silicon die depends on the activity of the circuits placed on it. In this paper, it is analyzed how Process, Voltage and Temperature (PVT) variations affect simultaneously some figures ...
    • On line monitoring of RF power amplifiers with embedded temperature sensors 

      Altet Sanahujes, Josep; Mateo Peña, Diego; Gómez Salinas, Dídac (IEEE, 2012)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      In the present paper we analyze that DC temperature measurements of the silicon surface can be used to monitor the high frequency status and performances of class A RF Power Amplifiers. As a proof of concept, we present ...
    • On the use of static temperature measurements as process variation observable 

      Gómez, Didac; Altet Sanahujes, Josep; Mateo Peña, Diego (2012-10)
      Article
      Accés restringit per política de l'editorial
      In this paper we present the use of static temperature measurements as process variation observable. Contrary to previously published thermal testing methods, the proposed methodology does not need an excitation signal, ...
    • On-chip thermal testing using MOSFETs in weak inversion 

      Reverter Cubarsí, Ferran; Altet Sanahujes, Josep (2015-02-01)
      Article
      Accés obert
      This paper analyzes the feasibility of using metal-oxide-semiconductor field-effect transistors (MOSFETs) operating in weak inversion as temperature sensors for on-chip thermal testing applications. MOSFETs in weak inversion ...
    • Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging 

      Perpinyà, Xavier; Reverter Cubarsí, Ferran; León, Javier; Barajas Ojeda, Enrique; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2018-01-01)
      Article
      Accés obert
      The viability of using off-chip single-shot imaging techniques for local thermal testing in integrated Radio Frequency (RF) power amplifiers (PA’s) is analyzed. With this approach, the frequency response of the output power ...
    • Posada en marxa d'un laboratori de mesura, control i formació en les tecnologies involucrades 

      Altet Sanahujes, Josep (2004)
      Pòster (projecte CCD)
      Accés obert
    • Registres 

      Altet Sanahujes, Josep; Pons Nin, Joan (Departament d'Enginyeria Electrònica, 2015-03-26)
      Audiovisual
      Accés obert
    • Review of temperature sensors as monitors for RFMMW built-in testing and self-calibration schemes 

      Altet Sanahujes, Josep; Aldrete Vidrio, Héctor; Reverter Cubarsí, Ferran; Gómez Salinas, Dídac; Gonzalez Jimenez, J. L.; Onabajo, Marvin; Silva Martinez, Jose; Martineau, B.; Perpiñà Gilabet, Xavier; Abdallah, Louay; Stratigopoulos, Haralampos-G.; Aragonès Cervera, Xavier; Jordà, Xavier; Vellvehi, Miquel; Dilhaire, Stefan; Mir, Salvador; Mateo Peña, Diego (Institute of Electrical and Electronics Engineers (IEEE), 2014)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      This paper presents an overview of the work done so far related to the use of temperature sensors as performance monitors for RF and MMW circuits with the goal to implement built-in testing or self-calibration techniques. ...
    • Single-MOSFET DC thermal sensor for RF-amplifier central frequency extraction 

      Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Barajas Ojeda, Enrique; León, Javier; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2017-09-01)
      Article
      Accés obert
      © 2017 Elsevier B.V. A DC thermal sensor based on a single metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed to extract high-frequency electrical features of embedded circuits. The MOSFET sensor is ...
    • Spatially and frequency-resolved monitoring of intradie capacitive coupling by heterodyne excitation infrared lock-in thermography 

      León, J.; Perpiñà, Xavier; Altet Sanahujes, Josep; Vallvehi, Miquel; Jordà, Xavier (2013-02-05)
      Article
      Accés restringit per política de l'editorial
      This paper combines the infrared lock-in thermography (IR-LIT) and heterodyne excitation techniques to detect high-frequency capacitive currents due to intradie electrical coupling between microelectronic devices or more ...
    • Strategies for built-in characterization testing and performance monitoring of analog RF circuits with temperature measurements 

      Aldrete Vidrio, Eduardo; Mateo Peña, Diego; Altet Sanahujes, Josep; Amine Salhi, M.; Grauby, Stéphane; Dilhaire, Stefan; Onabajo, M.; Silva-Martínez, José (2010-06-08)
      Article
      Accés obert
      This paper presents two approaches to characterize RF circuits with built-in differential temperature measurements, namely the homodyne and heterodyne methods. Both non-invasive methods are analyzed theoretically and ...
    • Study of heat sources interacting in integrated circuits by laser mirage effect 

      Perpiñà Gilabet, Xavier; Jordà, Xavier; Vellvehi, Miquel; Altet Sanahujes, Josep (2014-08-25)
      Article
      Accés restringit per política de l'editorial
      This work exploits the mirage effect to analyze multiple heat sources thermally interacting in an integrated circuit (IC) by means of a probe IR laser beam, which strikes on the die lateral walls and passes through the die ...
    • Survey of robustness enhancement techniques for wireless systems-on-a-chip and study of temperature as observable for process variations 

      Onabajo, M.; Gómez Salinas, Dídac; Aldrete Vidrio, Eduardo; Altet Sanahujes, Josep; Mateo Peña, Diego; Silva-Martínez, José (2011-06)
      Article
      Accés restringit per política de l'editorial
      Built-in test and on-chip calibration features are becoming essential for reliable wireless connectivity of next generation devices suffering from increasing process variations in CMOS technologies. This paper contains ...
    • Temperature as observable magnitude in silicon integrated circuits to characterize high frequency analog circuits 

      Mateo Peña, Diego; Altet Sanahujes, Josep; Gómez Salinas, Dídac; Aragonès Cervera, Xavier (2013)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      This paper introduces a novel on-chip measurement technique for the determination of the central frequency and 3dB bandwidth of a 60GHz power amplifier (PA) by performing low frequency temperature measurements in silicon ...
    • Temperature sensors and measurements to test analogue circuits: questions and answers 

      Altet Sanahujes, Josep; Rubio Sola, Jose Antonio; Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Aragonès Cervera, Xavier; Jordà, Xavier; Vellvehi, Miquel; Mateo Peña, Diego (Institute of Electrical and Electronics Engineers (IEEE), 2016)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      We have been working in the field of temperature sensors and temperature measurements to test analogue circuits during the past 10 years. As we have presented different works in many conferences, we have collected many ...
    • Temperature sensors to measure the central frequency and 3 dB bandwidth in mm W power amplifiers 

      Altet Sanahujes, Josep; Mateo Peña, Diego; Gómez Salinas, Dídac; González Jiménez, José Luis; Martineau, B.; Siligaris, Alexandre; Aragonès Cervera, Xavier (2014-04)
      Article
      Accés restringit per política de l'editorial
      This letter introduces a novel on-chip measurement technique for the determination of the central frequency and 3 dB bandwidth of a 60 GHz power amplifier (PA) by performing low frequency temperature measurements. The ...
    • Testing RF circuits with true non-intrusive built-in sensors 

      Abdallah, Louay; Stratigopoulos, Haralampos-G.; Mir, Salvador; Altet Sanahujes, Josep (IEEE, 2012)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      We present a set of sensors that enable a builtin test in RF circuits. The key characteristic of these sensors is that they are non-intrusive, that is, they are not electrically connected to the RF circuit, and, thereby, ...
    • Thermal coupling in ICs: aplications to the test and characterization of analogue and RF circuits 

      Altet Sanahujes, Josep; Mateo Peña, Diego; Aldrete Vidrio, Héctor (2010)
      Text en actes de congrés
      Accés obert
      In this presentation we cover how to use low frequency or DC temperature measurements to observe figures of merit of high frequency analogue circuits.
    • Thermal phase lag heterodyne infrared imaging for current tracking in radio frequency integrated circuits 

      Perpiñà Gilabet, Xavier; León, Javier; Altet Sanahujes, Josep; Vellvehi, Miquel; Reverter Cubarsí, Ferran; Barajas Ojeda, Enrique; Jordà, Xavier (2017-02-27)
      Article
      Accés obert
      With thermal phase lag measurements, current paths are tracked in a Class A radio frequency (RF) power amplifier at 2 GHz. The amplifier is heterodynally driven at 440 MHz and 2 GHz, and its resulting thermal field was ...
    • Two examples of approximate arithmetic to reduce hardware complexity and power consumption 

      Fornt Mas, Jordi; Jin, Leixin; Etxezarreta, Imanol; Fontova, Pau; Altet Sanahujes, Josep; Calomarde Palomino, Antonio; Morancho Llena, Enrique; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Comunicació de congrés
      Accés obert
      As the end of Moore's Law approaches, electronic system designers must find ways to keep up with the ever increasing computational demands of the modern era. Some computationally intensive applications, such as multimedia ...