Exploració per autor "Orpella García, Alberto"Més informacióMés informació

Ara es mostren els items 83-86 de 86

    • TCO-free low-temperature p+ emitters for back-junction c-Si solar cells 

      Martín García, Isidro; Coll Valentí, Arnau; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Desrues, Thibaut; Orpella García, Alberto; Alcubilla González, Ramón (Elsevier, 2015-08-28)
      Article
      Accés obert
      In this work, we report on the fabrication and characterization of n-type c-Si solar cells whose p+ emitters are based on laser processed aluminum oxide/silicon carbide (Al2O3/SiCx) films. The p+ emitter is defined at the ...

    • Thin film transistors obtained by hot wire CVD 

      Puigdollers i González, Joaquim; Orpella García, Alberto; Dosev, D; Voz Sánchez, Cristóbal; Peiró, D; Pallarés, J; Marsal, L F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2000-05)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated microcrystalline silicon films obtained at low temperature (150–280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) ...

    • Thin-film transistors with polymorphous silicon active layer 

      Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Orpella García, Alberto; Alcubilla González, Ramón; Fontcuberta Morral, Anna; Tripathi, V; Roca, P (2002-04)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated silicon thin films were obtained by plasma enhanced chemical vapour deposition under plasma conditions close to the formation of powder. By that means microcrystalline, polymorphous and amorphous silicon layers ...

    • Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys 

      Ferre, R; Orpella García, Alberto; Muñoz Cervantes, Delfina; Martín García, Isidro; Recart, F; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Cabarrocas, Roca I P; Alcubilla González, Ramón (2008-03)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiCxNy:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation ...