Exploració per autor "Orpella García, Alberto"
Ara es mostren els items 64-83 de 84
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P-type c-Si solar cells based on rear side laser processing of Al 2O 3/SiC x stacks
Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; López Rodríguez, Gema; Colina Brito, Mónica Alejandra; Orpella García, Alberto; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2012-11)
Article
Accés restringit per política de l'editorialIn this work, we further investigate a new strategy to passivate and contact the rear side of p-type c-Si solar cells based on the laser processing of aluminum oxide (Al2O3)/amorphous silicon carbide (SiCx) stacks before ... -
Pentacene thin-film transistors on polymeric gate dielectric: device fabrication and electrical characterization
Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Vetter, Michael; Alcubilla González, Ramón (2004-06)
Article
Accés restringit per política de l'editorialPentacene thin-film transistors using polymethyl methacrylate as a gate dielectric have been fabricated. A bottom gate, inverted staggered structure was selected to study the influence of the dielectric on the device ... -
Pentacene thin-film transistors with polymeric gate dielectric
Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Quidant, Romain; Martín García, Isidro; Vetter, Michael; Alcubilla González, Ramón (2004-06)
Article
Accés restringit per política de l'editorialPentacene thin-film transistors have been obtained using polymethyl methacrylate as a gate dielectric. The maximum process temperature was 170 °C, which corresponds to the baking of the polymeric gate dielectric. These ... -
Pentacene thin-films obtained by thermal evaporation in high vacuum
Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Martín García, Isidro; Vetter, Michael; Alcubilla González, Ramón (2003-03)
Article
Accés restringit per política de l'editorialPentacene thin-films were obtained by thermal evaporation in high vacuum of a pure (98%) commercially available source. All the samples were grown at room temperature (25 °C) and high deposition rates (>20 Å/s) on Corning ... -
Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide
Orpella García, Alberto; Vetter, Michael; Ferré Tomas, Rafel; Martín García, Isidro; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2005-01)
Article
Accés restringit per política de l'editorialWe propose the use of annealed phosphorus doped amorphous silicon carbide layers (a-SiC:H(n)) deposited by PECVD as emitters in solar cells and explore the effect of the annealing time on the emitter saturation current ... -
Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C
Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Damon-Lacoste, J; Cabarrocas, Roca I P (2008-01)
Article
Accés restringit per política de l'editorialIn this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous ... -
Rear contact pattern optimization based on 3D simulations for IBC solar cells with point-like doped contacts
Carrió Díaz, David; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; López Rodríguez, Gema; López González, Juan Miguel; Orpella García, Alberto; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2014-09)
Article
Accés restringit per política de l'editorialIn this work 3D simulations are used to study the impact of technological parameters on device performance of c-Si interdigitated back-contacted IBC solar cells with point-like doped contacts. In these cells, the highly-doped ... -
Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing
Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López Rodríguez, Gema; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (2014-01-31)
Article
Accés restringit per política de l'editorialThe emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive ... -
Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing
Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López, Gema; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (2013)
Comunicació de congrés
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Silicon nitride layers for DopLa-IBC solar cells
Méndez Puertas, Jesús A.; Martín García, Isidro; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2017)
Text en actes de congrés
Accés restringit per política de l'editorialIn this work, we report on the development of silicon nitride (SiNx) layers to be applied to crystalline silicon high-efficiency solar cells. In particular, our research group has developed the concept of Doped by Laser ... -
Space-charge limited ionic conductivity enhancement in gel polymer electrolyte capacitors by emb e dding nanoparticles
Cedeño Mata, Kristel Michelle; Orpella García, Alberto; Domínguez Pumar, Manuel; Bermejo Broto, Sandra (2021-08-03)
Article
Accés obertIn this work, a novel mixture of ionic liquid gel polymer electrolyte (ILGPE), containing 1-butyl-3-methylimidazolium bromide, ammonium acetate and poly(vinyl alcohol), with Si@C and SiO2 embedded nanoparticles is fabricated. ... -
Stability of hidrogenated nanocrystalline silicon thin-film transistors
Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Dosev, D; Fonrodona, Marta; Soler Vilamitjana, David; Bertomeu Balaguero, Joan; Asensi, J M; Andreu Batallé, Jordi; Alcubilla González, Ramón (2001-09)
Article
Accés restringit per política de l'editorialHydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over ... -
Stabilization of the J-V characteristic of a perovskite solar cell using an intelligent control loop
Bheesayagari, Chenna Reddy; Martínez-Denegrí Sánchez, Guillermo; Orpella García, Alberto; Pons Nin, Joan; Bermejo Broto, Sandra; Alcubilla González, Ramón; Martorell Pena, Jordi; Domínguez Pumar, Manuel (2021-01-02)
Article
Accés obertThe phenomena related to charge trapping are among the most relevant open issues that affect the long-term stability of perovskite-based devices. According to this, the objective of this paper is to report experimental ... -
Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates
López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Martín García, Isidro; Colina Brito, Mónica Alejandra; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2013-11-06)
Article
Accés obertThe aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization ... -
Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates
López Martí, Gema; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Martín García, Isidro; Colina Brito, Mónica Alejandra; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2013)
Altres
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Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films
Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Vetter, Michael; Alcubilla González, Ramón; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2003-05)
Article
Accés restringit per política de l'editorialIn this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination ... -
Surface passivation of p-type crystalline Si by plasma enhanced vapour deposited amorphous SiCx Films
Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Puigdollers i González, Joaquim; Cuevas, A; Alcubilla González, Ramón (2001-10)
Article
Accés restringit per política de l'editorialExcellent passivation properties of intrinsic amorphous silicon carbide (a-SiCx:H) films deposited by plasma enhanced chemical vapor deposition on single-crystalline silicon (c-Si) wafers have been obtained. The dependence ... -
TCO-free low-temperature p+ emitters for back-junction c-Si solar cells
Martín García, Isidro; Coll Valentí, Arnau; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Desrues, Thibaut; Orpella García, Alberto; Alcubilla González, Ramón (Elsevier, 2015-08-28)
Article
Accés obertIn this work, we report on the fabrication and characterization of n-type c-Si solar cells whose p+ emitters are based on laser processed aluminum oxide/silicon carbide (Al2O3/SiCx) films. The p+ emitter is defined at the ... -
Thin film transistors obtained by hot wire CVD
Puigdollers i González, Joaquim; Orpella García, Alberto; Dosev, D; Voz Sánchez, Cristóbal; Peiró, D; Pallarés, J; Marsal, L F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2000-05)
Article
Accés restringit per política de l'editorialHydrogenated microcrystalline silicon films obtained at low temperature (150–280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) ... -
Thin-film transistors with polymorphous silicon active layer
Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Orpella García, Alberto; Alcubilla González, Ramón; Fontcuberta Morral, Anna; Tripathi, V; Roca, P (2002-04)
Article
Accés restringit per política de l'editorialHydrogenated silicon thin films were obtained by plasma enhanced chemical vapour deposition under plasma conditions close to the formation of powder. By that means microcrystalline, polymorphous and amorphous silicon layers ...