A novel approach is used to achieve ohmic contacts on moderately doped p-type GaAs substrates. A laser-firing process is used instead of the conventional annealing step. The morphology of the crater created by the laser-firing ...

Punctual phosphorus diffused emitters were achieved by laser patterning phosphorus doped a-SiCx:H films deposited by PECVD as a doping source. Two different lasers at wavelengths of 1064 nm and 532 nm were used. Phosphorus ...

Aluminium/pentacene Schottky diodes have been fabricated on glass substrates. An ohmic, transparent front contact was prepared by sputtering a highly conductive indium–tin-oxide layer. The pentacene layer was evaporated ...

Pentacene thin-film transistors using polymethyl methacrylate as a gate dielectric have been fabricated. A bottom gate, inverted staggered structure was selected to study the influence of the dielectric on the device ...

Pentacene thin-films were obtained by thermal evaporation in high vacuum of a pure (98%) commercially available source. All the samples were grown at room temperature (25 °C) and high deposition rates (>20 Å/s) on Corning ...

In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous ...

The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive ...

In this work, we report on the development of silicon nitride (SiNx) layers to be applied to crystalline silicon high-efficiency solar cells. In particular, our research group has developed the concept of Doped by Laser ...

Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over ...