Impedance spectroscopy differences between colloidal 295-nm silica and 300-nm polystyrene nanoparticles in deionized water are analyzed in this work. Using two different two-electrode measurement setups, designed for this ...

The fabrication and characterization of in situ-doped amorphous Si/sub 0.8/C/sub 0.2/ emitter transistors are presented. Emitter Gummel numbers exceeding 10/sup 14/ s/cm/sup 4/ are reported for the first time in this type ...

In this work, we study the changes in the optical properties of 300-nm-thick hydrogenated amorphous silicon carbide layers after an annealing process. Both intrinsic and phosphorus-doped amorphous silicon carbide layers ...

In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated ...

In this work we study the optimization of laser-fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process ...

The growing interest in using thinner wafers (< 200 µm) requires the development of low temperature passivation strategies for the back contact of heterojunction solar cells. In this work, we investigate low temperature ...

Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques ...

N-type organic thin-film transistors based on N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide have been fabricated by thermal evaporation at different substrate temperatures. The best device was obtained at 120 ...

A novel approach is used to achieve ohmic contacts on moderately doped p-type GaAs substrates. A laser-firing process is used instead of the conventional annealing step. The morphology of the crater created by the laser-firing ...