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Ara es mostren els items 6-25 de 85

    • Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells 

      López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Voz Sánchez, Cristóbal; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2015-08-28)
      Article
      Accés obert
      Abstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as ...

    • Boosting the sensitivity and hysteresis of a gel polymer electrolyte by embedding SiO2 nanoparticles and PVP for humidity applications 

      Cedeño Mata, Kristel Michelle; Orpella García, Alberto; Domínguez Pumar, Manuel; Bermejo Broto, Sandra (Multidisciplinary Digital Publishing Institute (MDPI), 2024-01-10)
      Article
      Accés obert
      Enhancing sensitivity and hysteresis in capacitance humidity sensors is vital for precise, reliable, and consistent humidity control. This study explores this concern by incorporating polyvinylpyrrolidone (PVP) and SiO2 ...

    • Boron diffused emitters passivated with Al2O3 films 

      Masmitjà Rusiñol, Gerard; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Calle Martín, Eric; García Molina, Francisco Miguel; Martín García, Isidro; Orpella García, Alberto; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2013)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ...

    • c-Si solar cells based on laser-processed dielectric films 

      Martín García, Isidro; Colina Brito, Mónica Alejandra; Coll Valentí, Arnau; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (2014-09)
      Article
      Accés restringit per política de l'editorial
      This paper shows an innovative and low temperature fabrication technology for crystalline silicon (c-Si) solar cells where the highly-doped regions are punctually defined through laser processed dielectric films. ...

    • Capacitance study of a polystyrene nanoparticle capacitor using impedance spectroscopy 

      Véliz Noboa, Bremnen Marino; Orpella García, Alberto; Bermejo Broto, Sandra (2019-07-19)
      Article
      Accés obert
      In this study, a metal-insulator-metal capacitor structure is fabricated using polystyrene nanoparticles. Impedance spectroscopy is used to evaluate the performance of this capacitor in which we found a significant magnitude ...

    • Células fotovoltaicas con un rendimiento del 20.5% 

      Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (Grupo Acorde Comunicación (GAC), 2011-03-01)
      Article
      Accés restringit per política de l'editorial
      Un grupo de investigadores de la Universitat Politècnica de Catalunya (UPC) han desarrollado un proceso de fabricación que permite obtener rendimientos de conversión fotovoltaicos del 20,5%. Esto supone una mejora sustancial ...

    • Characterization and application of a-SiCx:H films for the passivation of the c-Si surface 

      Martín Campos, Ignacio Clemente; Vetter, M; Orpella García, Alberto; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Marsal, L F; Pallarès Marzal, Josep; Alcubilla González, Ramón (2002-01)
      Article
      Accés restringit per política de l'editorial
      In this work we investigate the effects of typical thermal treatments on c-Si surface passivation by intrinsic a-SiCx:H films. First, a forming gas anneal (FGA), (400 °C, 30 min in H2/N2) is applied resulting in an improvement ...

    • Characterization of bifacial heterojunction Silicon solar cells obtained by Hot-Wire CVD 

      Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Fonrodona, Marta; Garin Escriva, Moises; Orpella García, Alberto; Vetter, Michael; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, F; Bertoeu, J; Andreu Batallé, Jordi (2006-07)
      Article
      Accés restringit per política de l'editorial
      In this work, we study bifacial heterojunction silicon solar cells fabricated by hot-wire CVD on both p- and n-type crystalline silicon substrates. In these devices, hydrogenated microcrystalline silicon doped layers are ...

    • “Cold” process for IBC c-Si solar cells fabrication 

      López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Voz Sánchez, Cristóbal; Orpella García, Alberto; Alcubilla González, Ramón (Elsevier, 2016)
      Comunicació de congrés
      Accés obert

    • Condution mechanisms and charge trapping control in SiO2 nanoparticle MIM capacitors 

      Bheesayagari, Chenna Reddy; Pons Nin, Joan; Orpella García, Alberto; Véliz Noboa, Bremnen Marino; Bermejo Broto, Sandra; Domínguez Pumar, Manuel (2020-06-20)
      Article
      Accés obert
      The objective of this paper is to present a charge trapping control method for MIM capacitors in whichthe dielectric is made of electrospray-deposited silica nanoparticles. The influence of the bias voltage onthe impedance ...

    • Crystalline silicon solar cells beyond 20% efficiency 

      Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (IEEE Press. Institute of Electrical and Electronics Engineers, 2011)
      Text en actes de congrés
      Accés obert
      —This paper describes a fabrication process to obtain high efficiency c-Si cells (> 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have ...

    • Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition 

      Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (American Institute of Physics (AIP), 2005-12)
      Article
      Accés restringit per política de l'editorial
      Surface-passivating properties of hydrogenated amorphous silicon carbide films(a-SiCx:H)(a-SiCx:H)deposited by plasma-enhanced chemical-vapor deposition on both pp- and nn-type crystalline silicon(c-Si)(c-Si) have been ...

    • Development of LASER fired contacts on silicon heterojunction solar cells for the application to rear contact structures 

      Muñoz Cervantes, Delfina; Desrues, T.; Ribeyron, P.J.; Orpella García, Alberto; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2010-04)
      Article
      Accés restringit per política de l'editorial
      In this work, we present our progress in contacting both doped and undoped a-Si:H layers using a LASER tool and show some applications for three different HJ solar cell designs: standard (p-type), rear emitter (n-type) and ...

    • DopLaCell: a new c-Si solar cell based on laser processing of dielectric films 

      Martín García, Isidro; López González, Juan Miguel; Colina Brito, Mónica Alejandra; Orpella García, Alberto; Alcubilla González, Ramón (2013)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      In this paper we introduce a new crystalline silicon (c-Si) solar cell fabrication technology based on the laser processing of dielectric films to create all the highly-doped regions. We call it DopLaCell (Doped by Laser ...

    • Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Alcubilla González, Ramón (2004-11)
      Article
      Accés restringit per política de l'editorial
      Pentacene thin films obtained by thermal evaporation at room temperature have been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). The dielectric was spin-cast polymethyl methacrylate (PMMA) ...

    • Electronic properties of intrinsic and doped amorphous silicon carbide films 

      Vetter, Michael; Voz Sánchez, Cristóbal; Ferré Tomas, Rafel; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Andreu Batallé, Jordi; Alcubilla González, Ramón (2006-07)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated amorphous silicon carbide (a-SiCx : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was ...

    • Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Martín García, Isidro; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2002-04)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors ...

    • Emitter formation using laser doping technique on n- and p-type c-Si substrates 

      López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Colina Brito, Mónica Alejandra; Voz Sánchez, Cristóbal; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2015-05-01)
      Article
      Accés obert
      In this work laser doping technique is used to create highly-doped regions defined in a point-like structure to form n+/p and p+/n junctions applying a pulsed Nd-YAG 1064 nm laser in the n ...

    • Examen Final 

      Orpella García, Alberto; Ortega Villasclaras, Pablo Rafael (Universitat Politècnica de Catalunya, 2022-01-07)
      Examen
      Accés restringit a la comunitat UPC

    • Examen Final 

      Altet Sanahujes, Josep; Bermejo Broto, Sandra; Fernández Chimeno, Mireya; Martín García, Isidro; Orpella García, Alberto; Ortega Villasclaras, Pablo Rafael; Prat Viñas, Lluís; Puigdollers i González, Joaquim; Rodríguez Martínez, Ángel; Voz Sánchez, Cristóbal (Universitat Politècnica de Catalunya, 2013-01-08)
      Examen
      Accés restringit a la comunitat UPC