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Ara es mostren els items 132-147 de 147

    • Temperature dependence of the electrical properties of organic thin-film transistors based on tetraphenyldibenzoperiflanthene deposited at different substrate temperatures: Experiment and modeling 

      Boukhili, W.; Mahdouani, M.; Bourguiga, R.; Puigdollers i González, Joaquim (2016-01-25)
      Article
      Accés obert
      A series of inverted-staggered (top contact) p-channel organic thin film transistors based on small molecule tetraphenyldibenzoperiflanthene (DBP) as an active layer have been fabricated by thermal evaporation at different ...

    • Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer 

      Mahato, Somnath; Puigdollers i González, Joaquim (2018-02-01)
      Article
      Accés obert
      Temperature dependent current–voltage (I¿V) characteristics of Au/n-type silicon (n-Si) Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are used as an interface layer between gold and ...

    • Thin film transistors obtained by hot wire CVD 

      Puigdollers i González, Joaquim; Orpella García, Alberto; Dosev, D; Voz Sánchez, Cristóbal; Peiró, D; Pallarés, J; Marsal, L F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2000-05)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated microcrystalline silicon films obtained at low temperature (150–280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) ...

    • Thin-film transistors with polymorphous silicon active layer 

      Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Orpella García, Alberto; Alcubilla González, Ramón; Fontcuberta Morral, Anna; Tripathi, V; Roca, P (2002-04)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated silicon thin films were obtained by plasma enhanced chemical vapour deposition under plasma conditions close to the formation of powder. By that means microcrystalline, polymorphous and amorphous silicon layers ...

    • Towards the bisbenzothienocarbazole core: a route of sulfurated carbazole derivatives with assorted optoelectronic properties and applications 

      Bujaldón Carbó, Roger; Puigdollers i González, Joaquim; Velasco Castrillo, Maria Dolores (Multidisciplinary Digital Publishing Institute (MDPI), 2021-06-23)
      Article
      Accés obert
      Ladder-type molecules, which possess an extended aromatic backbone, are particularly sought within the optoelectronic field. In view of the potential of the 14H-bis[1]benzothieno[3,2-b:2’,3’-h]carbazole core as a p-type ...

    • Transition metal oxides as hole-selective contacts in silicon heterojunctions solar cells 

      Gerling Sarabia, Luis Guillermo; Mahato, Somnath; Morales-Vilches, Ana Belén; Masmitjà Rusiñol, Gerard; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Puigdollers i González, Joaquim (2016-02-02)
      Article
      Accés obert
      This work reports on a comparative study comprising three transition metal oxides, MoO3, WO3 and V2O5, acting as front p-type contacts for n-type crystalline silicon heterojunction solar cells. Owing to their high work ...

    • Transition metal oxides for kesterite solar cells developed on transparent substrates 

      Becerril Romero, Ignacio; Sylla, Dioulde; Placidi, Marcel Jose; Sánchez González, Yudania; Andrade Arvizu, Jacob; Izquierdo Roca, Víctor; Guc, Maxim; Pérez Rodríguez, Alejandro; Grini, Sigbjørn; Vines, Lasse; Pusay Villarroel, Benjamín Andrés; Almache Hernández, Rosa Estefanía; Puigdollers i González, Joaquim; Pistor, Jan Paul; Saucedo Silva, Edgardo Ademar; Espindola Rodríguez, Moisés (2020-07-01)
      Article
      Accés obert
      Fabrication on transparent soda-lime glass/fluorine-doped tin oxide (FTO) substrates opens the way to advanced applications for kesterite solar cells such as semitransparent, bifacial, and tandem devices, which are key to ...

    • Transport mechanisms in hyperdoped silicon solar cells 

      García Hernansanz, Rodrigo; Duarte Cano, Sebastián; Pérez Centeno, F; Caudevilla Gutiérrez, Daniel; Algaidy, S.; Garcia Hemme, E.; Olea Ariza, Javier; Pastor, D.; Del Prado, A.; San Andrés, E.; Martil, Ignacio; Ros Costals, Eloi; Puigdollers i González, Joaquim; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal (2022-11-16)
      Article
      Accés obert
      According to intermediate band (IB) theory, it is possible to increase the efficiency of a solar cell by boosting its ability to absorb low-energy photons. In this study, we used a hyperdoped semiconductor approach for ...

    • Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer 

      García Hernansanz, Rodrigo; Garcia Hemme, E.; Montero, D.; Olea Ariza, Javier; Prado Millán, Álvaro del; Martil, Ignacio; Voz Sánchez, Cristóbal; Gerling Sarabia, Luis Guillermo; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2018-10-01)
      Article
      Accés obert
      Heterojunction solar cells based on molybdenum sub-oxide (MoOx) deposited on n-type crystalline silicon have been fabricated. The hole selective character of MoOx is explained by its high workfunction, which causes a strong ...

    • Two-dimensional synergistic interfacial orientation on tin oxide-reinforced cobalt carbonate hydroxide heterostructures for high-performance energy storage 

      Pugalenthiyar, Thondaiman; Justin Raj, Chellan; Manikandan, Ramu; Dennyson Savariraj, Antonysamy; Puigdollers i González, Joaquim; Kaya, Cengiz; Chul Kim, Byung (2023-11-06)
      Article
      Accés restringit per política de l'editorial
      A hierarchical cobalt carbonate hydroxide (CCH) nanostructure with outstanding electrochemical kinetics and structural stability for energy storage is largely unknown. Herein, we report tin oxide-functionalized CCH ...

    • Ultrathin a-Si:H/Oxide transparent solar cells exhibiting UV-Blue selective-like absorption 

      Lopez-Garcia, Alex J.; Voz Sánchez, Cristóbal; Asensi López, José Miguel; Puigdollers i González, Joaquim; Izquierdo Roca, Víctor; Perez Rodriguez, Alejandro (John Wiley & sons, 2023-02-15)
      Article
      Accés obert
      Herein, the fabrication of transparent solar cells based on nanometric (8 and30 nm) intrinsic hydrogenated amorphous siliconfilms (a-Si:H) and using oxidethinfilms as transparent carrier selective contacts are reported. ...

    • Ultrathin wide-bandgap a-Si:H-based solar cells for transparent photovoltaic applications 

      Lopez-Garcia, Alex J.; Blazquez, Oriol; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Izquierdo Roca, Víctor; Perez Rodriguez, Alejandro (Wiley, 2022-01-01)
      Article
      Accés obert
      Herein, the fabrication of UV-blue selective transparent solar cells based on ultrathin (<30¿nm) intrinsic hydrogenated amorphous silicon films (a-Si:H) as absorber and using a fully inorganic architecture is reported, ...

    • V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells 

      Masmitjà Rusiñol, Gerard; Gerling Sarabia, Luis Guillermo; Ortega Villasclaras, Pablo Rafael; Puigdollers i González, Joaquim; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Royal Society of Chemistry, 2017-04-06)
      Article
      Accés obert
      Over the last few years, transition metal oxide layers have been proposed as selective contacts both for electrons and holes and successfully applied to silicon solar cells. However, better published results need the use ...

    • V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells 

      Masmitjà Rusiñol, Gerard; Gerling Sarabia, Luis Guillermo; Ortega Villasclaras, Pablo Rafael; Puigdollers i González, Joaquim; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Royal Society of Chemistry, 2017-05-21)
      Article
      Accés obert
      Over the last few years, transition metal oxide layers have been proposed as selective contacts both for electrons and holes and successfully applied to silicon solar cells. However, better published results need the use ...

    • Vertically aligned ZnO nanorod array/CuO heterojunction for UV detector application 

      Vikas, L. S.; Sanal, K. C.; Jayaraj, M. K.; Antony, Aldrin; Puigdollers i González, Joaquim (2014-11-01)
      Article
      Accés restringit per política de l'editorial
      Vertically aligned ZnO nanorod array (ZNA) was deposited by electrodeposition technique over glass substrate coated with Al doped ZnO (AZO). The photo-luminescence spectrum of the ZNA showed a near band edge emission and ...

    • Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys 

      Ferre, R; Orpella García, Alberto; Muñoz Cervantes, Delfina; Martín García, Isidro; Recart, F; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Cabarrocas, Roca I P; Alcubilla González, Ramón (2008-03)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiCxNy:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation ...