Ara es mostren els items 11-30 de 147

    • Back junction n-type silicon heterojunction solar cells with V2O5 hole-selective contact 

      Gerling Sarabia, Luis Guillermo; Masmitjà Rusiñol, Gerard; Voz Sánchez, Cristóbal; Ortega Villasclaras, Pablo Rafael; Puigdollers i González, Joaquim; Alcubilla González, Ramón (Elsevier, 2016)
      Comunicació de congrés
      Accés obert
    • Bifacial heterojunction silicon solar cells by Hot-Wire CVD with open circuit voltage exceeding 600 mV 

      Voz Sánchez, Cristóbal; Muñoz Cervantes, Delfina; Fonrodona, Marta; Martín García, Isidro; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Escarré, Jordi; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2006-07)
      Article
      Accés restringit per política de l'editorial
      Double-sided (bifacial) heterojunction silicon solar cells have been fabricated by Hot-Wire CVD on both p- and n-type crystalline silicon substrates. In these devices, doped microcrystalline silicon layers are combined ...
    • Células fotovoltaicas con un rendimiento del 20.5% 

      Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (Grupo Acorde Comunicación (GAC), 2011-03-01)
      Article
      Accés restringit per política de l'editorial
      Un grupo de investigadores de la Universitat Politècnica de Catalunya (UPC) han desarrollado un proceso de fabricación que permite obtener rendimientos de conversión fotovoltaicos del 20,5%. Esto supone una mejora sustancial ...
    • Challenges and improvement pathways to develop quasi-1D (Sb1-xBix)2Se3-based materials for optically tuneable photovoltaic applications. Towards chalcogenide narrow-bandgap devices 

      Caño Prades, Ivan; Vidal Fuentes, Pedro; Gon Medaille, Axel; Jehl, Zacharie Victor Samuel Na; Jiménez Arguijo, Alex; Guc, Maxim; Izquierdo Roca, Víctor; Malerba, Claudia; Valentini, Matteo; Jiménez Guerra, Maykel; Placidi, Marcel Jose; Puigdollers i González, Joaquim; Saucedo Silva, Edgardo Ademar (2023-03-01)
      Article
      Accés obert
      Quasi-1D chalcogenides have shown great promises in the development of emerging photovoltaic technologies. However, most quasi-1D semiconductors other than Sb2Se3 and Sb2S3 have been seldom investigated for energy generation ...
    • Characterization and application of a-SiCx:H films for the passivation of the c-Si surface 

      Martín Campos, Ignacio Clemente; Vetter, M; Orpella García, Alberto; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Marsal, L F; Pallarès Marzal, Josep; Alcubilla González, Ramón (2002-01)
      Article
      Accés restringit per política de l'editorial
      In this work we investigate the effects of typical thermal treatments on c-Si surface passivation by intrinsic a-SiCx:H films. First, a forming gas anneal (FGA), (400 °C, 30 min in H2/N2) is applied resulting in an improvement ...
    • Characterization and modeling of organic thin-film transistors based pi-conjugated small molecule tetraphenyldibenzoperiflanthene: effects of channel length 

      Boukhili, W.; Mahdouani, M.; Bourguiga, R.; Puigdollers i González, Joaquim (2016-07-01)
      Article
      Accés obert
      P-type organic thin film transistors (OTFTs) with different channel lengths have been fabricated and characterized by thermal evaporation using the small tetraphenyldibenzoperiflanthene (DBP) as an active material on Si/SiO2 ...
    • Characterization of bifacial heterojunction Silicon solar cells obtained by Hot-Wire CVD 

      Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Fonrodona, Marta; Garin Escriva, Moises; Orpella García, Alberto; Vetter, Michael; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, F; Bertoeu, J; Andreu Batallé, Jordi (2006-07)
      Article
      Accés restringit per política de l'editorial
      In this work, we study bifacial heterojunction silicon solar cells fabricated by hot-wire CVD on both p- and n-type crystalline silicon substrates. In these devices, hydrogenated microcrystalline silicon doped layers are ...
    • Characterization of transition metal Oxide/Silicon heterojunctions for solar cell applications 

      Gerling Sarabia, Luis Guillermo; Mahato, Somnath; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Puigdollers i González, Joaquim (2015-10-09)
      Article
      Accés obert
      During the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides ...
    • Comparison between the density-of-states of picene transistors measured in air and under vacuum 

      Voz Sánchez, Cristóbal; Marsal, Albert; Moreno Sierra, César; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2012-01)
      Article
      Accés restringit per política de l'editorial
      Picene has recently attracted much attention as the active layer in organic thin-film transistors because of its good performance in air. In this work, we have fabricated picene thin-film transistors that exhibit field-effect ...
    • Comparison of simulation models for Perovskite solar cells 

      Silvestre Bergés, Santiago; Mas-Marza, Elena; Puigdollers i González, Joaquim; Fabregat-Santiago, Francisco; Alfonso, Valero G (WIP Renewable Energies, 2016)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      In this work, a comparison of two models for the simulation of the electrical behavior of perovskite solar cells is presented. The two models considered are the well-known one diode model and an analytical model recently ...
    • Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors 

      Marsal Vinade, Albert; Carreras Seguí, Paz; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Galindo Lorente, Sergi; Alcubilla González, Ramón; Bertomeu Balaguero, Joan; Antony, Aldrin (2014-03-31)
      Article
      Accés restringit per política de l'editorial
      In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced ...
    • Confronting positions: para-vs. meta-functionalization in triindole for p-type air-stable OTFTs 

      Cuadrado Santolaria, Alba; Bujaldón Carbó, Roger; Fabregat Pallejà, Clara; Puigdollers i González, Joaquim; Velasco Castrillo, Maria Dolores (2024-05)
      Article
      Accés obert
      The 5,10,15-trihexyl-10,15-dihydro-5H-diindolo[3,2-a:3',2'-c]carbazole core, namely triindole, is well-known for its prominent hole-transporting properties and air stability. The functionalization of this core is also ...
    • Copper phthalocyanine thin filma transistors with polymeric gate dielectric 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Fonrodona, Marta; Cheylan, Stephanie; Stella, M; Andreu Batallé, Jordi; Vetter, Michael; Alcubilla González, Ramón (2006-06)
      Article
      Accés restringit per política de l'editorial
      Copper phthalocyanine (CuPc) thin-film transistors have been fabricated using polymethyl methacrylate (PMMA) as gate dielectric. A bottom gate, staggered structure was selected to study the device performance. CuPc thin-films ...
    • Crystalline silicon solar cells beyond 20% efficiency 

      Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (IEEE Press. Institute of Electrical and Electronics Engineers, 2011)
      Text en actes de congrés
      Accés obert
      —This paper describes a fabrication process to obtain high efficiency c-Si cells (> 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have ...
    • Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition 

      Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (American Institute of Physics (AIP), 2005-12)
      Article
      Accés restringit per política de l'editorial
      Surface-passivating properties of hydrogenated amorphous silicon carbide films(a-SiCx:H)(a-SiCx:H)deposited by plasma-enhanced chemical-vapor deposition on both pp- and nn-type crystalline silicon(c-Si)(c-Si) have been ...
    • Defect states assisted charge conduction in Au/MoO3¿x/n-Si Schottky barrier diode 

      Mahato, Somnath; Voz Sánchez, Cristóbal; Biswas, Debaleen; Puigdollers i González, Joaquim; Bhunia, Satyaban (Institute of Physics (IOP), 2018-12-07)
      Article
      Accés obert
      Role of defect states of thermally evaporated molybdenum trioxide (MoO3-x) on electrical conductivity was investigated via low temperature current–voltage and capacitance–voltage measurements. To clarify the charge transport ...
    • Degradation study and calculation of density-of-states in PTCDI-C8 channel layer from the electrical characteristics of thin-film transistors 

      Shijeesh, Methattel R.; Vikas, L. S.; Jayaraj, M. K.; Puigdollers i González, Joaquim (American Institute of Physics (AIP), 2014-07-14)
      Article
      Accés restringit per política de l'editorial
      N-type organic thin film transistor (OTFT) with a top-contact structure was fabricated by thermal vapour deposition using N,N'-Dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) as an n-channel layer on Si/SiO2 substrate. ...
    • Density-of-states in pentacene from the electrical characteristics of thin-film transistors 

      Puigdollers i González, Joaquim; Marsal Vinade, Albert; Cheylan, Stephaie; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2010-08)
      Article
      Accés restringit per política de l'editorial
      In this work the density-of-states in the gap of pentacene is calculated from the electrical characteristics of thin-film transistors measured at different temperatures. The density-of-states after a thermal annealing in ...
    • Deoxyribonucleic acid-based electron selective contact for crystalline silicon solar cells 

      Tom, Thomas; Ros Costals, Eloi; Rovira, David; Lopez Vidrier, Julià; Asensi López, José Miguel; Ortega Villasclaras, Pablo Rafael; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Bertomeu Balagueró, Joan (Wiley, 2023-02-10)
      Article
      Accés obert
      Development of carrier selective contacts for crystalline silicon solar cells has been recently of great interest toward the further expansion of silicon photovoltaics. The use of new electron and hole selective layers has ...
    • Does Sb2Se3 admit nonstoichiometric conditions? How modifying the overall se content affects the structural, optical, and optoelectronic properties of Sb2Se3 thin films 

      Caño Prades, Ivan; Vidal Fuentes, Pedro; Calvo Barrio, Lorenzo; Alcobé Olle, Xavier; Giraldo, Sergio; Sánchez González, Yudania; Jehl Li-Kao, Zacharie; Placidi, Marcel Jose; Puigdollers i González, Joaquim; Izquierdo Roca, Víctor; Saucedo Silva, Edgardo Ademar; Asensi López, José Miguel (2022-03-09)
      Article
      Accés obert
      Sb2Se3 is a quasi-one-dimensional (1D) semiconductor, which has shown great promise in photovoltaics. However, its performance is currently limited by a high Voc deficit. Therefore, it is necessary to explore new strategies ...