Exploració per autor "Moll Echeto, Francisco de Borja"
Ara es mostren els items 68-87 de 98
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On anomaly-aware structural health monitoring at the extreme edge
Arnaiz Martínez, David Mariano; Alarcón Cot, Eduardo José; Moll Echeto, Francisco de Borja; Vilajosana Guillén, Xavier (Institute of Electrical and Electronics Engineers (IEEE), 2023-01-01)
Article
Accés obertSelf-awareness has been successfully utilized to create adaptive behaviors in wireless sensor nodes. However, its adoption can be daunting in scenarios, such as structural health monitoring, where the monitored environment ... -
On evaluating temperature as observable for CMOS technology variability
Altet Sanahujes, Josep; Gómez Salinas, Dídac; Dufis, Cédric Yvan; González Jiménez, José Luis; Mateo Peña, Diego; Aragonès Cervera, Xavier; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (2010-05-26)
Text en actes de congrés
Accés obertThe temperature at surface of a silicon die depends on the activity of the circuits placed on it. In this paper, it is analyzed how Process, Voltage and Temperature (PVT) variations affect simultaneously some figures ... -
On the variability-aware design of memristor-based logic circuits
Escudero López, Manuel; Vourkas, Ioannis; Rubio Sola, Jose Antonio; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2018)
Text en actes de congrés
Accés obertEver since the advent of the first TiO 2 -based memristor and the respective linear model published by Hewlett-Packard Labs, several behavioral models of memristors have been published. Such models capture the fundamental ... -
Optimum piezoelectric bending beam structures for energy harvesting using shoe inserts
Mateu, Loreto; Moll Echeto, Francisco de Borja (SAGE Publications Ltd, 2005-10)
Article
Accés obertThe small amount of power demanded by many present-day electronic devices opens up the possibility to convert part of the energy present in the environment into electrical energy, using several methods. One such method is ... -
Pespectives of TFET devices in ultra-low power charge pumps for thermo-electric energy sources
Nunes Cavalheiro, David Manuel; Moll Echeto, Francisco de Borja; Valtchev, Stanimir (Institute of Electrical and Electronics Engineers (IEEE), 2015)
Text en actes de congrés
Accés restringit per política de l'editorialThe superior electrical characteristics of the heterojunction III-V Tunnel FET (TFET) devices can outperform current technologies in the process of energy harvesting conversion at ultra-low power supply voltage operation ... -
Power supply noise and logic error probability
Andrade Miceli, Dennis Michael; Martorell Cid, Ferran; Pons Solé, Marc; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (2007-08)
Text en actes de congrés
Accés obertVoltage fluctuations caused by parasitic impedances in the power supply rails of modern ICs are a major concern in nowadays ICs. The voltage fluctuations are spread out to the diverse nodes of the internal sections causing ... -
Prospects of Tunnel FETs in the design of power management circuits for weak energy harvesting dc sources
Nunes Cavalheiro, David; Moll Echeto, Francisco de Borja; Valtchev, Stanimir (Institute of Electrical and Electronics Engineers (IEEE), 2018-02-23)
Article
Accés obertIn this paper, a new tunnel FET (TFET)-based power management circuit (PMC) is proposed for weak dc energy harvesting sources. Thanks to their particular carrier injection mechanisms, TFETs can be used to design efficient ... -
Review of energy harvesting techniques and applications for microelectronics
Mateu, Loreto; Moll Echeto, Francisco de Borja (International Society for Optical Engineering, 2005)
Text en actes de congrés
Accés obertThe trends in technology allow the decrease in both size and power consumption of complex digital systems. This decrease in size and power gives rise to new paradigms of computing and use of electronics, with many small ... -
Robust sequential circuits design technique for low voltage and high noise scenarios
García Leyva, Lancelot; Rivera Dueñas, Juan; Calomarde Palomino, Antonio; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (2016)
Text en actes de congrés
Accés obertAll electronic processing components in future deep nanotechnologies will exhibit high noise level and/ or low S/N ratios because of the extreme voltage reduction and the nearly erratic nature of such devices. ... -
Sargantana: an academic SoC RISC-V processor in 22nm FDSOI technology
Doblas Font, Max; Candón Arenas, Gerard; Carril Gil, Xavier; Dominguez de la Rocha, Marc; Erra, Enric; González Trejo, Alberto; Jiménez, Víctor; Kostalampros, Ioannis-Vatistas; Langarita Benítez, Rubén; Leyva Santes, Neiel; López Paradís, Guillem; Mendoza Escobar, Jonnatan; Oltra Oltra, Josep Angel; Pavón Rivera, Julián; Ramírez Lazo, Cristóbal; Rodas Quiroga, Narcís; Reggiani, Enrico; Rodriguez, Mario; Rojas Morales, Carlos; Ruiz Ramirez, Abraham Josafat; Safadi Figueroa, Hugo Ernesto; Soria Pardos, Víctor; Vargas Valdivieso, Iván; Arreza, Fernando; Figueras Bagué, Roger; Fontova Muste, Pau; Marimon Illana, Joan; Aragonès Cervera, Xavier; Cristal Kestelman, Adrián; Mateo Peña, Diego; Moll Echeto, Francisco de Borja; Moretó Planas, Miquel; Palomar Pérez, Óscar; Sonmez, Nehir; Unsal, Osman Sabri; Valero Cortés, Mateo (Institute of Electrical and Electronics Engineers (IEEE), 2023)
Comunicació de congrés
Accés obertThis paper describes the Sargantana System on chip (SoC), a 64-bit RISC-V single core processor designed by a number of academic institutions and manufactured in 22 nm FDSOI technology: BSC, UPC, UB, UAB, CIC-IPN and IMB-CNM ... -
Semi-analytic discrete time model of a 1-stage CC-CP
Palma Carmona, Kenneth; Moll Echeto, Francisco de Borja (2019-11-20)
Report de recerca
Accés obertThis paper employs a linear, discrete-time State- Space model of a CMOS Cross-Coupled Charge Pump (CCCP.) The discrete-time model is based on the analytic solution of the differential equations at each semi-period. This ... -
SET and noise fault tolerant circuit design techniques: application to 7 nm FinFET
Calomarde Palomino, Antonio; Amat Bertran, Esteve; Moll Echeto, Francisco de Borja; Vigara Campmany, Julio Enrique; Rubio Sola, Jose Antonio (2014-04-01)
Article
Accés obertIn the near future of high component density and low-power technologies, soft errors occurring not only in memory systems and latches but also in the combinational parts of logic circuits will seriously affect the reliable ... -
Simulated leakage power analysis attack of the trivium stream cipher
Palma Carmona, Kenneth; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2022)
Text en actes de congrés
Accés restringit per política de l'editorialIn this paper, the theoretical basis for power analysis attacks on the Trivium utilizing leakage current as a side-channel are presented. The analysis is first established in the case of an ideal implementation without the ... -
Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells
Martinez, Javier; Rodriguez, Rosa; Nafría Maqueda, Montserrat; Torrents, Gabriel; Bota, Sebastian A .; Segura, Jaume; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
Text en actes de congrés
Accés restringit per política de l'editorialRandom Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is ... -
System-level simulation of a self-powered sensor with piezoelectric energy harvesting
Mateu, Loreto; Moll Echeto, Francisco de Borja (2007-10)
Text en actes de congrés
Accés obertThis paper presents a complete system simulation of a self-powered communication module. The components are described with the Verilog-A language, that allows to merge the electrical and mechanical models of the system. ... -
Systematic and random variability analysis of two different 6T-SRAM layout topologies
Amat Bertran, Esteve; Amatlle, E.; Gómez González, Sergio; Aymerich Capdevila, Nivard; García Almudéver, Carmen; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (2013-09)
Article
Accés obert -
TFET-Based power management circuit for RF energy harvesting
Nunes Cavalheiro, David Manuel; Moll Echeto, Francisco de Borja; Valtchev, Stanimir (2016-11-14)
Article
Accés obertThis paper proposes a Tunnel FET (TFET)-based power management circuit (PMC) for ultra-low power RF energy harvesting applications. In contrast with conventional thermionic devices, the band-to-band tunneling mechanism of ... -
Transistor sizing analysis of regular fabrics
Marranghello, Felipe S.; Dal Bem, Vinicius; Reis, André Inácio; Ribas, Renato P.; Moll Echeto, Francisco de Borja (2011)
Text en actes de congrés
Accés obertThis paper presents an extensive transistor sizing analysis for regular transistor fabrics. Several evaluation methods have been exploited, such as DC simulations, ring oscillators and single-gate open chain structures. ... -
Tunnel FET device characteristics for RF energy harvesting passive rectifiers
Nunes Cavalheiro, David Manuel; Moll Echeto, Francisco de Borja (2015-06)
Comunicació de congrés
Accés obertThe lack of high power conversion efficiency in RF passive rectifier circuits at sub-µW power levels with current MOSFET technologies is directly related with the difficulty of the transistors in conducting the required ... -
Turtle Logic: A new probabilistic design methodology of nanoscale digital circuits
García Leyva, Lancelot; Calomarde Palomino, Antonio; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (IEEE Press. Institute of Electrical and Electronics Engineers, 2010)
Text en actes de congrés
Accés obertAs devices and operating voltages are scaled down, future circuits will be plagued by higher soft error rates, reduced noise margins and defective devices. A key challenge for the future technologies is to retain circuit ...