Ara es mostren els items 66-85 de 200

    • Fabricacion y caracterizacion de guias opticas integradas sobre sustratos de silicio 

      Torner Sabata, Lluís; Alcubilla González, Ramón; Calderer Cardona, Josep (1991)
      Text en actes de congrés
      Accés obert
      Silicon nitride (Si 3 N4 ) planar optical waveguides have been successfully grown by lowpressure chemical vapor deposition (LPCVD). Silicon p-type wafers with a (100) orientation were used as substrates, and the Si3 N4 was ...
    • Fabrication and characterization of in-situ doped a-Si0.8C0.2 emitter bipolar transistors 

      Orpella García, Alberto; Puigdollers i González, Joaquim; Bardés Llorensí, Daniel; Alcubilla González, Ramón; Marsal, L F; Pallarès Marzal, Josep (2000-09)
      Article
      Accés restringit per política de l'editorial
      Silicon–carbon emitters were deposited by plasma enhanced chemical vapour deposition (PECVD) on a conventional silicon transistor base. The resulting transistors were annealed after the emitter had been deposited which led ...
    • Fabrication of silicon oxide microneedles from macroporous silicon 

      Rodríguez Martínez, Ángel; Molinero, D; Valera Cano, Enrique Andrés; Todorov Trifonov, Trifon; Marsal, L F; Pallarès Marzal, Josep; Alcubilla González, Ramón (2005-04)
      Article
      Accés restringit per política de l'editorial
      This paper presents a novel technique for silicon dioxide (SiO2) microneedle fabrication. Microneedles are hollow microcapillaries with tip diameters in the range of micrometers. They can be used in the fabrication of ...
    • Fabrication of two- and three-dimensional photonic crystals by electrochemical etching of silicon 

      Todorov Trifonov, Trifon; Marsal, L F; Rodríguez Martínez, Ángel; Pallarès Marzal, Josep; Alcubilla González, Ramón (2005-05)
      Article
      Accés restringit per política de l'editorial
      This paper reports on the fabrication of two-dimensional macropore arrays by electrochemical etching of silicon. We describe some critical effects accompanying the etching process that can generate imperfections in the ...
    • First use of macroporous silicon loaded with catalyst film for a chemical reaction: a microreformer for producing hydrogen from ethanol steam reforming 

      Llorca Piqué, Jordi; Casanovas Grau, Albert; Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Alcubilla González, Ramón (2008-04-25)
      Article
      Accés restringit per política de l'editorial
      Macroporous silicon with millions of parallel microchannels per square centimeter can be used as a micromonolithic support for high-speed catalysis in miniaturized systems, opening a new and exciting field of research and ...
    • Fixed charge density in dielectrics deposited on c-Si using space charge region dominated lifetime measurements 

      Garin Escriva, Moises; Martín García, Isidro; Bermejo Broto, Sandra; Alcubilla González, Ramón (American Institute of Physics, 2007-06-29)
      Article
      Accés restringit per política de l'editorial
      Depletion region modulation (DRM) effect is often observed in photoconductance lifetime measurements of crystalline silicon wafers passivated by dielectric films. This effect is closely related to the space-charge region ...
    • From random to order: Colloidal crystals on non-flat surfaces 

      Coll Valentí, Arnau; Bermejo Broto, Sandra; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Alcubilla González, Ramón (2016-03-05)
      Article
      Accés obert
      © 2016 Elsevier B.V. All rights reserved. This paper introduces the possibility to produce 1-2 cm2 and tens of layers colloidal crystals on different non-flat surfaces by means of electrospray deposition. Two different ...
    • Front contact optimization of industrial scale CIGS solar cells for low solar concentration using 2D physical modeling 

      Delgado Sánchez, José María; López González, Juan Miguel; Orpella García, Alberto; Sánchez-Cortezón, Emilio; Alba, Maria D.; López López, Carmen; Alcubilla González, Ramón (2017-02-01)
      Article
      Accés obert
      Cu(In,Ga)Se2 (CIGS) technology is one of the best absorber materials with record efficiencies among photovoltaic thin-film technologies (22.3% at lab scale and 16% at large commercial module). Although research on this ...
    • Fullerene thin-film transistors fabricated on polymeric gate dielectric 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Cheylan, Stephanie; Orpella García, Alberto; Vetter, M; Alcubilla González, Ramón (2007-07)
      Article
      Accés restringit per política de l'editorial
      Thin-film transistors with fullerene as n-type organic semiconductor have been fabricated. A polymeric gate dielectric, polymethyl methacrylate, has been used as an alternative to usual inorganic dielectrics. No significant ...
    • Fully low temperature interdigitated back-contacted c-Si(n) solar cells based on laser-doping from dielectric stacks 

      Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Muñoz Martín, David; Martín García, Isidro; Voz Sánchez, Cristóbal; Molpeceres Alvarez, Carlos; Alcubilla González, Ramón (2017-09-01)
      Article
      Accés obert
      This work shows a novel fabrication process of interdigitated back-contacted c-Si(n) solar cells based on laser-doped point contacts. In this approach, all the highly-doped regions have been entirely fabricated through UV ...
    • Germanium photovoltaic cells with MoO x hole-selective contacts 

      Alcañiz, A.; López Rodríguez, Gema; Martín García, Isidro; Jiménez Pagán, Alba; Datas Medina, Alejandro; Calle, Eric; Ros Costals, Eloi; Gerling Sarabia, Luis Guillermo; Voz Sánchez, Cristóbal; del Cañizo Nadal, Carlos; Alcubilla González, Ramón (2019-03-15)
      Article
      Accés obert
      Very thin, thermally evaporated MoOx (x¿<¿3) layer has been used as transparent hole-selective contact on an n-type Germanium substrate to effectively demonstrate PV conversion capability. The fabricated MoOx/Ge heterojunction ...
    • Growth of plasmonic gold nanostructures by electron beam induced deposition 

      Graells, S; Alcubilla González, Ramón; Badenes, G; Quidant, Romain (2007-09)
      Article
      Accés restringit per política de l'editorial
      The authors report on the growth of organometallic dots for optical applications using electron beam induced gold deposition on a transparent substrate. The effects of the substrate material and the deposition parameters, ...
    • High aspect ratio silicon dioxide pillars 

      Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Servera, F; Marsal, L F; Pallarès Marzal, Josep; Alcubilla González, Ramón (2005-06)
      Article
      Accés restringit per política de l'editorial
      This article describes the benefits of including cross-layer information in the scheduling mechanism of a UMTS downlink channel. In particular, the information obtained from the fast power control algorithm is used to ...
    • High efficiency interdigitated back-contact c-Si solar cells 

      Calle Martín, Eric; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Martín García, Isidro; Carrió Díaz, David; Voz Sánchez, Cristóbal; Orpella García, Alberto; Puigdollers i González, Joaquim; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2015)
      Text en actes de congrés
      Accés obert
      In this work we describe a baseline fabrication process of interdigitated-back-contact c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+ regions at the backside, with ...
    • High efficiency ITO-free hybrid solar cell using highly conductive PEDOT:PSS with co-solvent and surfactant treatments 

      Mahato, Somnath; Gerling Sarabia, Luis Guillermo; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Puigdollers i González, Joaquim (2016-10-15)
      Article
      Accés obert
      Hybrid organic/inorganic heterojunction solar cells were fabricated based on polished n-type crystalline silicon (c-Si) and p-type transparent conducting polymer poly(3,4-ethylenedioxythiophene):polystyrenesulfonate ...
    • High-efficiency solar cells based on inversion layer emitters 

      Martín García, Isidro; Lövblom, R.; Alcubilla González, Ramón (2009-09)
      Comunicació de congrés
      Accés obert
      In crystalline silicon (c-Si) solar cells based on p-type substrates, inversion layer emitters have been proposed as an alternative to high-temperature phosphorus diffusion. Dielectric film deposition at low temperature ...
    • IBC n-type C-Si solar cells based on laser doping processing for selective emitter and base contact formation 

      Masmitjà Rusiñol, Gerard; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; López Rodríguez, Gema; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2016)
      Comunicació de congrés
      Accés obert
    • Impact of metallization techniques of surface passivation of high efficiency crystalline silicon solar cells 

      Coll Valentí, Arnau; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Bermejo Broto, Sandra; López, Gema; Alcubilla González, Ramón (2013)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      Most of the high-efficiency c-Si solar cells are based on dielectric films that electrically passivate c-Si surface and must keep their passivation properties after metal deposition on top of them. This work studies the ...
    • Improved electron selectivity in silicon solar cells by cathode modification with a dipolar conjugated polyelectrolyte interlayer 

      Ros Costals, Eloi; Barquera Bibiano, Zaira; Ortega Villasclaras, Pablo Rafael; Gerling Sarabia, Luis Guillermo; Masmitjà Rusiñol, Gerard; Martín García, Isidro; Alcubilla González, Ramón; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal (2019-01-01)
      Article
      Accés obert
      This work studies a novel electron-selective contact for n-type silicon solar cells based on the modification of the cathode with a polymeric interlayer. Specifically, a thin layer of the conjugated polyelectrolyte PFN is ...
    • Improvement of crystalline silicon surface passivation by hidrogen plasma treatment 

      Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Kharchenko, A.V.; Roca i Cabarrocas, Pere (American Institute of Physics, 2004-03-01)
      Article
      Accés restringit per política de l'editorial
      A completely dry low-temperature process has been developed to passivate 3.3 Ωcm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just ...