Exploració per autor "López González, Juan Miguel"
Ara es mostren els items 20-28 de 28
-
Influence of wavelength and pulse duration on the selective laser ablation of WOx, VOx and MoOx thin films
Muñoz García, Cristina; Canteli, David; Lauzurica, Sara; Morales, Miguel; Molpeceres Alvarez, Carlos; Ros Costals, Eloi; Ortega Villasclaras, Pablo Rafael; López González, Juan Miguel; Voz Sánchez, Cristóbal (Elsevier, 2022-02-01)
Article
Accés obertIn this paper, we present a study of the laser scribing of WOx, VOx, and MoOx films, deposited onto crystalline silicon, with three different wavelengths (355 nm, 532 nm, and 1064 nm) and in two temporal regimes in pulse ... -
Microscale characterization of surface recombination at the vicinity of laser-processed regions in c-Si solar cells
Roige, A; Osso, J.O; Martín García, Isidro; Voz Sánchez, Cristóbal; Ortega Villasclaras, Pablo Rafael; López González, Juan Miguel; Alcubilla González, Ramón; Vega, L. F (2016-03-01)
Article
Accés obertLaser firing processes have emerged as a technologically feasible approach for the fabrication of local point contacts or local doped regions in advanced high-efficiency crystalline-Si (c-Si) solar cells. In this work, we ... -
Numerical simulations of rear point-contacted solar cells pn 2.2 Wcm p-type c-Si substrates
López González, Juan Miguel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (2013-07)
Article
Accés obertRear surface of high-efficiency crystalline silicon solar cells is based on a combination of dielectric passivation and point-like contacts. In this work, we develop a 3D model for these devices based on 2.2 Ωcm p-type ... -
Patterning of WOx, VOx, and MoOx thin-films with picosecond and nanosecond laser sources
Muñoz García, Cristina; Canteli, David; Lauzurica, Sara; Morales Furio, Miguel; Molpeceres Alvarez, Carlos; Ros Costals, Eloi; Ortega Villasclaras, Pablo Rafael; López González, Juan Miguel; Voz Sánchez, Cristóbal (Elsevier, 2022)
Text en actes de congrés
Accés obertTransition metal oxide (TMOs) layers have interesting properties as selective contacts, i.e., hole or electron transport layers for novel semiconductor devices. Especially, oxides of molybdenum (MoO3), vanadium (V2O5), and ... -
Plataforma hardware universal para prácticas sobre sistemas electrónicos analógico-digitales avanzados en régimen de semipresencialidad
Gago Barrio, Javier; González Díez, David; López González, Juan Miguel (2006-02)
Text en actes de congrés
Accés obertAquest projecte tracta d’implementar una metodologia per fer pràctiques d’Electrònica Analògica amb circuits avançats que es puguin configurar fàcilment dins d’una placa hardware universal. Aquesta metodologia es basa en ... -
Rear contact pattern optimization based on 3D simulations for IBC solar cells with point-like doped contacts
Carrió Díaz, David; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; López Rodríguez, Gema; López González, Juan Miguel; Orpella García, Alberto; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2014-09)
Article
Accés restringit per política de l'editorialIn this work 3D simulations are used to study the impact of technological parameters on device performance of c-Si interdigitated back-contacted IBC solar cells with point-like doped contacts. In these cells, the highly-doped ... -
Study of emitter width effects on beta(F), f(T) and f(max) of 200 GHz SiGe HBTs by DD, HD and EB device simulation
López González, Juan Miguel; Schröter, Michael (2009-09)
Article
Accés restringit per política de l'editorialThis paper studies the effect of emitter width on the dc current gain, βF , and ac figures of merit, cut-off frequency, f T, and maximum oscillation frequency, f max, of realistic structures for 200 GHz SiGe heterojunction ... -
Study of emitter width effects on BF, fT and fmax of 200 GHz SiGe HBTs by DD, HD and EB device simulation
Schröter, Michael; López González, Juan Miguel (2009-11)
Article
Accés restringit per política de l'editorialThis paper studies the effect of emitter width on the dc current gain, βF , and ac figures of merit, cut-off frequency, f T, and maximum oscillation frequency, f max, of realistic structures for 200 GHz SiGe heterojunction ... -
Universidad de California San Diego versus Universidad Politécnica de Cataluña
López González, Juan Miguel (Escola Tècnica Superior d'Enginyers de Telecomunicació de Barcelona, 1999)
Article
Accés obert