Exploració per autor "Blanqué, Servane"

Ara es mostren els items 1-4 de 4

    • Advances in a baseline process towards high efficiency c-Si solar cell fabrication 

      Alcubilla González, Ramón; Ortega Villasclaras, Pablo Rafael; López, G.; Martín García, Isidro; Bermejo Broto, Sandra; Blanqué, Servane; García Molina, Francisco Miguel; Orpella García, Alberto; Voz Sánchez, Cristóbal (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
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    • Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD 

      Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Blanqué, Servane; Ibarz, D; Bertomeu Balaguero, Joan; Alcubilla González, Ramón (2009-03)
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      In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated ...

    • N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks 

      Orpella García, Alberto; Blanqué, Servane; Roiati, V.; Martín García, Isidro; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
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      This paper studies the passivation of industrially textured deep silicon emitters using amorphous silicon carbonitride layers in stack configuration, deposited by plasma enhanced chemical vapor deposition. With this ...

    • Optimization of laser processes in n+Emitter formation for c-Si solar cells 

      Orpella García, Alberto; Martín García, Isidro; Blanqué, Servane; Voz Sánchez, Cristóbal; Sánchez, I.; Colina, M.; Molpeceres, C.; Alcubilla González, Ramón (2009-09)
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      Punctual phosphorus diffused emitters were achieved by laser patterning phosphorus doped a-SiCx:H films deposited by PECVD as a doping source. Two different lasers at wavelengths of 1064 nm and 532 nm were used. Phosphorus ...