Exploració per tema "Silicon"

Ara es mostren els items 1-20 de 95

    • 3D TCAD modeling of laser processed c-Si solar cells 

      López González, Juan Miguel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2015)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      This paper presents an 3D TCAD model of crystalline Silicon (c-Si) solar cells. Physical parameters used in the model are discussed. Simulation results are compared to experimental current-voltage curves and solar cell ...

    • A compact charge ratio expression for the emitter delay of polysilicon emitter bipolar transistors 

      Castañer Muñoz, Luis María; Sureda, S; Bardés Llorensí, Daniel; Alcubilla González, Ramón (1994-03)
      Article
      Accés obert
      A compact solution for the ratio of the excess minority carrier charge stored into the polysilicon to the charge stored in the single crystal part of the emitter of a polysilicon emitter bipolar transistor is derived. The ...

    • Acoustic wave transversal filter for 5G N77 band 

      Mateu Mateu, Jordi; Yusuf, Yazid; Perea Robles, Rafael; Collado Gómez, Juan Carlos; Gimenez, Alfred; Martín Iglesias, Petronilo; Aigner, Robert (Institute of Electrical and Electronics Engineers (IEEE), 2021-10-01)
      Article
      Accés obert
      This work presents the complete synthesis procedure and circuit transformations needed to go from the characteristic polynomials to the transversal network formed by electroacoustic resonators. This filter topology allows ...

    • Advanced control platform for electric motor characterization: comparison of wide bandgap semiconductors in field-oriented control motor application 

      Nowak, Aleksandra (Universitat Politècnica de Catalunya, 2023-01-27)
      Projecte Final de Màster Oficial
      Accés restringit per decisió de l'autor
      With the growing development and broadening use of semiconductors, it is important to note their differences, advantages and disadvantages. Silicon Carbide (SiC) and Gallium Nitride (GaN) in particular, are two types with ...

    • Alignment of terahertz transmission setups with free-space laser photoconductive switches 

      Nuño Gómez, Daniel-Juan; Vega Piña, Sara; Santos Blanco, M. Concepción (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Comunicació de congrés
      Accés restringit per política de l'editorial
      A systematic procedure for ensuring perfect alignment of Photoconductive Antennas (PCA) in transmittance measure setups with free-space laser PCA gap feeding and mechanical adjust of silicon substrate lenses is presented. ...

    • An IBC solar cell for the UPC CubeSat-1 mission 

      Ortega Villasclaras, Pablo Rafael; Jové Casulleras, Roger; Pedret, A; Gonzalvez, G.; López Rodríguez, Gema; Martín García, Isidro; Domínguez Pumar, Manuel; Alcubilla González, Ramón; Camps Carmona, Adriano José (Institute of Electrical and Electronics Engineers (IEEE), 2013)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      In this work the fabrication and electrical characterization of interdigitated back contact IBC solar cells is shown. These solar cells have been specifically designed for a CubeSat based satellite under developement at ...

    • Bifacial heterojunction silicon solar cells by Hot-Wire CVD with open circuit voltage exceeding 600 mV 

      Voz Sánchez, Cristóbal; Muñoz Cervantes, Delfina; Fonrodona, Marta; Martín García, Isidro; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Escarré, Jordi; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2006-07)
      Article
      Accés restringit per política de l'editorial
      Double-sided (bifacial) heterojunction silicon solar cells have been fabricated by Hot-Wire CVD on both p- and n-type crystalline silicon substrates. In these devices, doped microcrystalline silicon layers are combined ...

    • Boron diffused emitters passivated with Al2O3 films 

      Masmitjà Rusiñol, Gerard; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Calle Martín, Eric; García Molina, Francisco Miguel; Martín García, Isidro; Orpella García, Alberto; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2013)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ...

    • CAD directions for high performance asynchronous circuits 

      Stevens, Kenneth S.; Rotem, Shai; Burns, Steven M.; Cortadella, Jordi; Ginosar, Ran; Kishinevsky, Michael; Roncken, Marly (Association for Computing Machinery (ACM), 1999)
      Text en actes de congrés
      Accés obert
      This paper describes a novel methodology for high performance asynchronous design based on timed circuits and on CAD support for their synthesis using relative timing. This methodology was developed for a prototype iA32 ...

    • Carrier selective contact characterization using work function bender buffer layers 

      Capella Guardià, Francesc Xavier (Universitat Politècnica de Catalunya, 2022-06)
      Treball Final de Grau
      Accés obert
      2D materials emerge with a promising future for optoelectronics. First reported in 2011, MXenes have excellent properties such as metallic-like conductivity and high transmittance, thus, they can be used as transparent ...

    • Characterization of bifacial heterojunction Silicon solar cells obtained by Hot-Wire CVD 

      Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Fonrodona, Marta; Garin Escriva, Moises; Orpella García, Alberto; Vetter, Michael; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, F; Bertoeu, J; Andreu Batallé, Jordi (2006-07)
      Article
      Accés restringit per política de l'editorial
      In this work, we study bifacial heterojunction silicon solar cells fabricated by hot-wire CVD on both p- and n-type crystalline silicon substrates. In these devices, hydrogenated microcrystalline silicon doped layers are ...

    • Colloidal crystal wires 

      Tymczenko, M; Marsal, L E; Todorov Trifonov, Trifon; Rodriguez, Isabelle; Ramiro-Manzano, F; Pallares, J; Rodríguez Martínez, Ángel; Alcubilla González, Ramón; Meseguer, F (2008-06-18)
      Article
      Accés restringit per política de l'editorial
      Several configurations of colloidal wires are obtained by infiltration of charge-stabilized polystyrene spheres into cylindrical pores of a silicon membrane (see figure). As channel dimensions are comparable to those of ...

    • Compact thermo-diffusion based physical memristor model 

      Fyrigos, Iosif-Angelos; Chatzinikolaou, Theodoros Panagiotis; Ntinas, Vasileios; Kitsios, Stavros; Bousoulas, Panagiotis; Tsompanas, Michael-Antisthenis; Tsoukalas, Dimitris; Adamatzky, Andrew; Rubio Sola, Jose Antonio; Sirakoulis, Georgios Ch. (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      The threshold switching effect is critical in memristor devices for a range of applications, from crossbar design reliability to simulating neuromorphic features using artificial neural networks. The rich inherit dynamics ...

    • CVD graphene-FET based cascode circuits: a design exploration and fabrication towards intrinsic gain enhancement 

      Iannazzo Soteras, Mario Enrique; Alarcón Cot, Eduardo José; Pandey, Himadri; Passi, V.; Lemme, M. C. (Institute of Electrical and Electronics Engineers (IEEE), 2016)
      Text en actes de congrés
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      This paper presents the design exploration of a basic cascode circuit (CAS) targeted to increase the intrinsic gain A# of a graphene field-effect-transistor (GFET) by decreasing its output conductance go. First, the ...

    • Desarrollo de nuevas aleaciones Al-Si-Cu microaleadas 

      Gual Amengual, Pau; Izquierdo Pascual, Mariano (Universitat Politècnica de Catalunya, 2019-02-06)
      Treball Final de Grau
      Accés restringit per decisió de l'autor
      [CASTELLÀ] El objetivo principal de este trabajo ha sido realizar un estudio del efecto de los diferentes elementos de aleación añadidos a la aleación de aluminio AlSi9Cu3. Estos elementos son el Zn, Mg, Cr, Zr y el afinante ...

    • Design and implementation of a 5/spl times/5 trits multiplier in a quasi-adiabatic ternary CMOS logic 

      Mateo Peña, Diego; Rubio Sola, Jose Antonio (1998-07)
      Article
      Accés obert
      Adiabatic switching is a technique to design low-power digital IC's. Fully adiabatic logics have expensive silicon area requirements. To solve this drawback, a quasi-adiabatic ternary logic is proposed. Its basis is ...

    • Design of a phase locked loop for optical upconversion 

      Herranz Salazar, Francisco (Universitat Politècnica de Catalunya, 2018-05)
      Projecte Final de Màster Oficial
      Accés obert
      Silicon Photonics has become a key technology in the design of devices for the next generation of wireless communications. One of the most important challenges of 5G is the transport of microwave signals over fiber links, ...

    • Dielectric metal dielectric antireflection plasmonic layers 

      Ros Costals, Eloi (Universitat Politècnica de Catalunya, 2017-06)
      Treball Final de Grau
      Accés obert
      Dielectric/Metal/Dielectric structures using Transition Metal Oxides (TMOs) as a dielectric layer and very thin-film layers of metal will be fabricated and their opto-electrical properties evaluated. In particular, ...

    • Disseny i muntatge d'un convertidor d'alta eficiencia 

      Paradell Solà, Pol (Universitat Politècnica de Catalunya, 2016-04-20)
      Projecte Final de Màster Oficial
      Accés obert
      L’objectiu d’aquest projecte és crear un prototip d’un convertidor trifàsic de dos nivells amb la tecnologia de carbur de silici (SiC). Dins l’objectiu de crear un convertidor trifàsic, hi ha diferents fites que hem ...

    • Efecto de los elementos microaleantes en las aleaciones de aluminio para fundición 

      Martínez Cabornero, Leire; Martínez Mercadé, Francesc (Universitat Politècnica de Catalunya, 2019-06)
      Treball Final de Grau
      Accés restringit per decisió de l'autor
      Realitzat a/amb:   Bostlan / Aleastur / CIE Automotive. Componentes Vilanova
      [CASTELLÀ] El objetivo principal de este trabajo es realizar un estudio de los diferentes elementos de aleación añadidos al AlSi9Cu3, proporcionado por CIE Componentes VIlanova, también denominado EN AC 46500. Estos elementos ...