Exploració per tema "Atomic Layer Deposition"
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Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon
(2015-11)
Article
Accés obertWe demonstrate that n-type black silicon can be passivated efficiently using Atomic Layer Deposited (ALD) Al2O3, reaching maximum surface recombination velocities below 7 cm/s. We show that the low surface recombination ...