A decreasing-sized π -model electrostatic discharge (ESD) protection structure is presented and applied to protect against ESD stresses at the RF input pad of an ultra-low power CMOS front-end operating in the 2.4-GHz ...

In the last few years exciting advances have been achieved in developing printing techniques for organic semiconductors, and impressive mobility values have been reported for the resulting organic field-effect transistors ...

An all-digital self-adaptive clock generation system capable of adapt the clock frequency to compensate the effects of PVTA variations on the IC propagation delay and satisfy an externally set propagation length condition ...

The 1-D design style with gridded design rules is gaining ground for addressing the printability issues in subwavelength photolithography. One of the synthesis problems in cell generation is transistor folding, which ...

[ANGLÈS] The main objective is the implementation of an automated system for the characterization of grid connected photovoltaic applications. This project arises by the need of automating the configuration and the measures ...

Picene has recently attracted much attention as the active layer in organic thin-film transistors because of its good performance in air. In this work, we have fabricated picene thin-film transistors that exhibit field-effect ...

El transistor bipolar, com altres dispositius semiconductors, utilitza models matemàtics per simular el seu comportament elèctric. El model matemàtic, o model compacte del dispositiu semiconductor, equival a un circuit ...

In this work the density-of-states in the gap of pentacene is calculated from the electrical characteristics of thin-film transistors measured at different temperatures. The density-of-states after a thermal annealing in ...

Pentacene thin films obtained by thermal evaporation at room temperature have been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). The dielectric was spin-cast polymethyl methacrylate (PMMA) ...

In this paper, we pr esent the dynamic 3T memory cell for future 10nm tri-gate FinFETs as a potential replacement for classical 6T SRAM cell for implementation in high speed cache memories. We investigate read access ...