• Optimization of laser processes in n+Emitter formation for c-Si solar cells 

      Orpella García, Alberto; Martín García, Isidro; Blanqué, Servane; Voz Sánchez, Cristóbal; Sánchez, I.; Colina, M.; Molpeceres, C.; Alcubilla González, Ramón (2009-09)
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      Punctual phosphorus diffused emitters were achieved by laser patterning phosphorus doped a-SiCx:H films deposited by PECVD as a doping source. Two different lasers at wavelengths of 1064 nm and 532 nm were used. Phosphorus ...