Now showing items 1-6 of 6

  • Power-aware voltage tuning for STT-MRAM reliability 

    Vatajelu, Elena Ioana; Rodríguez Montañés, Rosa; Di Carlo, Stefano; Renovell, Michel; Prinetto, Paolo; Figueras Pàmies, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2015)
    Conference report
    Restricted access - publisher's policy
    One of the most promising emerging memory technologies is the Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM), due to its high speed, high endurance, low area, low power consumption, and good scaling capability. ...
  • Read/write robustness estimation metrics for spin transfer torque (STT) MRAM cell 

    Vatajelu, Elena Ioana; Rodríguez Montañés, Rosa; Indaco, Marco; Renovell, Michel; Prinetto, Paolo; Figueras Pàmies, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2015)
    Conference report
    Restricted access - publisher's policy
    The rapid development of low power, high density, high performance SoCs has pushed the embedded memories to their limits and opened the field to the development of emerging memory technologies. The Spin- Transfer-Torque ...
  • Robustness of SRAM to Power Supply Noise during Leakage Power Saving in DVS 

    Vatajelu, Elena Ioana; Renovell, Michel; Figueras Pàmies, Joan (IEEE Press. Institute of Electrical and Electronics Engineers, 2010)
    Conference report
    Restricted access - publisher's policy
  • SRAM cell stability metric under transient voltage noise 

    Vatajelu, Elena Ioana; Gómez Pau, Álvaro; Renovell, Michel; Figueras Pàmies, Joan (2013-12-20)
    Article
    Restricted access - publisher's policy
  • SRAM stability metric under transient noise 

    Vatajelu, Elena Ioana; Gómez Pau, Álvaro; Renovell, Michel; Figueras Pàmies, Joan (2012)
    Conference report
    Open Access
    ventional way to analyze the robustness of an SRAM bit cell is to quantify its immunity to static noise. The static immunity to disturbances like process and mi smatch variations, bulk noises, supply rings variations, ...
  • Transient noise failures in SRAM cells: dynamic noise margin metric 

    Vatajelu, Elena Ioana; Gómez Pau, Álvaro; Renovell, Michel; Figueras Pàmies, Joan (IEEE Computer Society Publications, 2011)
    Conference report
    Restricted access - publisher's policy
    Current nanometric IC processes need to assess the robustness of memories under any possible source of disturbance: process and mismatch variations, bulk noises, supply rings variations, temperature changes, aging and ...