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  • Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes 

    Marsal Garví, Lluís F.; Martín García, Isidro; Pallarés Marzal, Josep; Orpella García, Alberto; Alcubilla González, Ramón (American Institute of Physics, 2003-08-15)
    Restricted access - publisher's policy
    P1-type hydrogenated amorphous silicon–carbon (a-Si12xCx :H) on n-type crystalline silicon (c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal annealing on the electrical ...