• Cross-layer system reliability assessment framework for hardware faults 

    Vallero, Alessandro; Savino, Alessandro; Politano, Gianfranco; Di Carlo, Stefano; Chatzidimitriou, Athanansios; Tselonis, Sotiris; Kaliorakis, Manolis; Gizipoulos, Dimitris; Riera Villanueva, Marc; Canal Corretger, Ramon; González Colás, Antonio María; Kooli, Maha; Bosio, Alberto; Di Natale, Giorgio (Institute of Electrical and Electronics Engineers (IEEE), 2016)
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    System reliability estimation during early design phases facilitates informed decisions for the integration of effective protection mechanisms against different classes of hardware faults. When not all system abstraction ...
  • Defective Behaviour of an 8T SRAM Cell with Open Defects 

    Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Manich Bou, Salvador; Figueras Pàmies, Joan; Di Carlo, Stefano; Prinetto, Paolo; Scionti, Alberto (2010)
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  • Power-aware voltage tuning for STT-MRAM reliability 

    Vatajelu, Elena Ioana; Rodríguez Montañés, Rosa; Di Carlo, Stefano; Renovell, Michel; Prinetto, Paolo; Figueras Pàmies, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2015)
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    One of the most promising emerging memory technologies is the Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM), due to its high speed, high endurance, low area, low power consumption, and good scaling capability. ...
  • Reliability estimation at block-level granularity of spin-transfer-torque MRAMs 

    Di Carlo, Stefano; Indaco, Marco; Prinetto, Paolo; Vatajelu, Elena Ioana; Rodríguez Montañés, Rosa; Figueras Pàmies, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2014)
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    In recent years, the Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) has emerged as a promising choice for embedded memories due to its reduced read/write latency and high CMOS integration capability. Under ...