Exploració per autor "Amat, Esteve"

Ara es mostren els items 1-8 de 8

    • Memristive crossbar design and test in non-adaptive proactive reconfiguring scheme 

      Pouyan, Peyman; Amat, Esteve; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2015)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      One of the most promising emerging technologies is based on the use of memristive devices. Although capable of implementing certain type of logic circuits, they are being extensively used for memory applications. Beside ...

    • Memristive crossbar memory lifetime evaluation and reconfiguration strategies 

      Pouman, Peyman; Amat, Esteve; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2016-06-20)
      Article
      Accés obert
      Among the emerging technologies and devices for highly scalable and low power memory architectures, memristors are considered as one of the most favorable alternatives for next generation memory technologies. They are ...

    • Optimization of FinFET-based gain cells for low power sub-vt embedded drams 

      Amat, Esteve; Calomarde Palomino, Antonio; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2018-06-01)
      Article
      Accés obert
      Sub-threshold circuits (sub-V T) are a promising alternative in the implementation of low power electronics. The implementation of gain-cell embedded DRAMs (eDRAMs) based on FinFET devices requires a careful design to ...

    • Reliability challenges in design of memristive memories 

      Pouyan, Peyman; Amat, Esteve; Rubio Sola, Jose Antonio (2014)
      Text en actes de congrés
      Accés obert

    • Review on suitable eDRAM configurations for next nano-metric electronics era 

      Amat, Esteve; Canal Corretger, Ramon; Calomarde Palomino, Antonio; Rubio Sola, Jose Antonio (2018-03)
      Article
      Accés obert
      We summarize most of our studies focused on the main reliability issues that can threat the gain-cells eDRAM behavior when it is simulated at the nano-metric device range has been collected in this review. So, to outperform ...

    • RRAM variability and its mitigation schemes 

      Pouman, Peyman; Amat, Esteve; Hamdioui, Said; Rubio Sola, Jose Antonio (2016)
      Text en actes de congrés
      Accés obert
      Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories. ...

    • Statistical lifetime analysis of memristive crossbar matrix 

      Pouyan, Peyman; Amat, Esteve; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2015)
      Text en actes de congrés
      Accés obert
      Memristors are considered one of the most favorable emerging device alternatives for future memory technologies. They are attracting great attention recently, due to their high scalability and compatibility with CMOS ...

    • Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level 

      Amat, Esteve; Calomarde Palomino, Antonio; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Comunicació de congrés
      Accés restringit per política de l'editorial
      This paper explores the feasibility, in terms of performance and reliability, of gain-cell embedded DRAM (eDRAM) to be operative at sub-threshold range, when they are implemented with 10 nm FinFET devices. The use of ...