• FinFET and III-V/Ge technology impact on 3T1D cell behavior 

      Amat Bertran, Esteve; Calomarde Palomino, Antonio; Almudever, Carmen G.; Aymerich Capdevila, Nivard; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2013)
      Comunicació de congrés
      Accés obert
      In this work, we assess the performance of a ring oscillator and a DRAM cell when they are implemented with different technologies (planar CMOS, FinFET and III-V MOSFETs), and subjected to different reliability ...
    • Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections 

      Almudever, Carmen G.; Rubio Sola, Jose Antonio (2015-02-01)
      Article
      Accés obert
      Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon transistors. Boasting extraordinary electronic properties, CNFETs exhibit characteristics rivaling those of state-of-the-art ...