Exploració per autor "Almudever, Carmen G."
Ara es mostren els items 1-2 de 2
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FinFET and III-V/Ge technology impact on 3T1D cell behavior
Amat Bertran, Esteve; Calomarde Palomino, Antonio; Almudever, Carmen G.; Aymerich Capdevila, Nivard; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2013)
Comunicació de congrés
Accés obertIn this work, we assess the performance of a ring oscillator and a DRAM cell when they are implemented with different technologies (planar CMOS, FinFET and III-V MOSFETs), and subjected to different reliability ... -
Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections
Almudever, Carmen G.; Rubio Sola, Jose Antonio (2015-02-01)
Article
Accés obertCarbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon transistors. Boasting extraordinary electronic properties, CNFETs exhibit characteristics rivaling those of state-of-the-art ...