• A novel variation-tolerant 4T-DRAM cell with enhanced soft-error tolerance 

      Ganapathy, Shrikanth; Canal Corretger, Ramon; Alexandrescu, Dan; Costenaro, Enrico; González Colás, Antonio María; Rubio Sola, Jose Antonio (IEEE Computer Society Publications, 2012)
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      In view of device scaling issues, embedded DRAM (eDRAM) technology is being considered as a strong alternative to conventional SRAM for use in on-chip memories. Memory cells designed using eDRAM technology in addition ...
    • INFORMER: an integrated framework for early-stage memory robustness analysis 

      Ganapathy, Shrikanth; Canal Corretger, Ramon; Alexandrescu, Dan; Costenaro, Eric; González Colás, Antonio María; Rubio Sola, Jose Antonio (European Interactive Digital Advertising Alliance (EDAA), 2014)
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      With the growing importance of parametric (process and environmental) variations in advanced technologies, it has become a serious challenge to design reliable, fast and low-power embedded memories. Adopting a variation-aware ...