Now showing items 1-8 of 8

  • Parametric Failure Analysis of Embedded SRAMs using Fast & Accurate Dynamic Analysis 

    Vatajelu, Elena Ioana; Panagopoulos, Georgios; Roy, Kaushik; Figueras Pàmies, Joan (IEEE Press. Institute of Electrical and Electronics Engineers, 2010)
    Conference report
    Restricted access - publisher's policy
  • Process variability in sub-16nm bulk CMOS technology 

    Rubio Sola, Jose Antonio; Figueras Pàmies, Joan; Vatajelu, Elena Ioana; Canal Corretger, Ramon (2012-03-01)
    External research report
    Open Access
    The document is part of deliverable D3.6 of the TRAMS Project (EU FP7 248789), of public nature, and shows and justifies the levels of variability used in the research project for sub-18nm bulk CMOS technologies.
  • Reliability estimation at block-level granularity of spin-transfer-torque MRAMs 

    Di Carlo, Stefano; Indaco, Marco; Prinetto, Paolo; Vatajelu, Elena Ioana; Rodríguez Montañés, Rosa; Figueras Pàmies, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2014)
    Conference report
    Restricted access - publisher's policy
    In recent years, the Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) has emerged as a promising choice for embedded memories due to its reduced read/write latency and high CMOS integration capability. Under ...
  • Robustness of SRAM to Power Supply Noise during Leakage Power Saving in DVS 

    Vatajelu, Elena Ioana; Renovell, Michel; Figueras Pàmies, Joan (IEEE Press. Institute of Electrical and Electronics Engineers, 2010)
    Conference report
    Restricted access - publisher's policy
  • SRAM cell stability metric under transient voltage noise 

    Vatajelu, Elena Ioana; Gómez Pau, Álvaro; Renovell, Michel; Figueras Pàmies, Joan (2013-12-20)
    Article
    Restricted access - publisher's policy
  • SRAM stability metric under transient noise 

    Vatajelu, Elena Ioana; Gómez Pau, Álvaro; Renovell, Michel; Figueras Pàmies, Joan (2012)
    Conference report
    Open Access
    ventional way to analyze the robustness of an SRAM bit cell is to quantify its immunity to static noise. The static immunity to disturbances like process and mi smatch variations, bulk noises, supply rings variations, ...
  • Statistical analysis of SRAM aarametric failure under supply voltage scaling 

    Vatajelu, Elena Ioana; Figueras Pàmies, Joan (IEEE Computer Society Publications, 2010)
    Conference report
    Restricted access - publisher's policy
  • Transient noise failures in SRAM cells: dynamic noise margin metric 

    Vatajelu, Elena Ioana; Gómez Pau, Álvaro; Renovell, Michel; Figueras Pàmies, Joan (IEEE Computer Society Publications, 2011)
    Conference report
    Restricted access - publisher's policy
    Current nanometric IC processes need to assess the robustness of memories under any possible source of disturbance: process and mismatch variations, bulk noises, supply rings variations, temperature changes, aging and ...