Now showing items 1-3 of 3

  • Effect of amorphous silicon carbide layer thickness on passivation quantity of crystalline silicon surface 

    Ferré Tomas, Rafel; Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Alcubilla González, Ramón (American Institute of Physics, 2005-11-09)
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    Surface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer ...
  • Improvement of crystalline silicon surface passivation by hidrogen plasma treatment 

    Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Kharchenko, A.V.; Roca i Cabarrocas, Pere (American Institute of Physics, 2004-03-01)
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    A completely dry low-temperature process has been developed to passivate 3.3 Ωcm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just ...
  • n-type emitter surface passivation in c-Si solar cells by means of antireflective amorphous silicon carbide layers 

    Ferré Tomas, Rafel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Vetter, Michael; Torres, I.; Alcubilla González, Ramón (American Institute of Physics, 2006-10-05)
    Article
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    Emitter saturation current densities (JOe) of phosphorus-diffused planar c-Si solar cell emitters passivated by silicon carbide (SiCx) layers have been determined in a wide sheet resistance range (20-500 Ω/sp). Phosphorus ...