Ara es mostren els items 1-10 de 10

  • Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface 

    Ferré Tomas, Rafel; Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Alcubilla González, Ramón (American Institute of Physics, 2005-11-09)
    Article
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    Surface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer ...
  • Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Alcubilla González, Ramón (2004-11)
    Article
    Accés restringit per política de l'editorial
    Pentacene thin films obtained by thermal evaporation at room temperature have been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). The dielectric was spin-cast polymethyl methacrylate (PMMA) ...
  • Improvement of crystalline silicon surface passivation by hidrogen plasma treatment 

    Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Kharchenko, A.V.; Roca i Cabarrocas, Pere (American Institute of Physics, 2004-03-01)
    Article
    Accés restringit per política de l'editorial
    A completely dry low-temperature process has been developed to passivate 3.3 Ωcm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just ...
  • IR-study of a-SiCx:H and a-SiCxNy:H films for c-Si surface passivation 

    Vetter, Michael; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2004-03)
    Article
    Accés restringit per política de l'editorial
    Amorphous intrinsic silicon carbide (a-SiCx:H(i)) films and amorphous silicon carbonitride (SiCxNy:H) films have been deposited by plasma enhanced chemical vapor deposition from CH4/SiH4/(N2) plasma on n-type (1.5 O cm) ...
  • n-type emitter surface passivation in c-Si solar cells by means of antireflective amorphous silicon carbide layers 

    Ferré Tomas, Rafel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Vetter, Michael; Torres, I.; Alcubilla González, Ramón (American Institute of Physics, 2006-10-05)
    Article
    Accés restringit per política de l'editorial
    Emitter saturation current densities (JOe) of phosphorus-diffused planar c-Si solar cell emitters passivated by silicon carbide (SiCx) layers have been determined in a wide sheet resistance range (20-500 Ω/sp). Phosphorus ...
  • Pentacene thin-film transistors on polymeric gate dielectric: device fabrication and electrical characterization 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Vetter, Michael; Alcubilla González, Ramón (2004-06)
    Article
    Accés restringit per política de l'editorial
    Pentacene thin-film transistors using polymethyl methacrylate as a gate dielectric have been fabricated. A bottom gate, inverted staggered structure was selected to study the influence of the dielectric on the device ...
  • Pentacene thin-film transistors with polymeric gate dielectric 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Quidant, Romain; Martín García, Isidro; Vetter, Michael; Alcubilla González, Ramón (2004-06)
    Article
    Accés restringit per política de l'editorial
    Pentacene thin-film transistors have been obtained using polymethyl methacrylate as a gate dielectric. The maximum process temperature was 170 °C, which corresponds to the baking of the polymeric gate dielectric. These ...
  • Pentacene thin-films obtained by thermal evaporation in high vacuum 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Martín García, Isidro; Vetter, Michael; Alcubilla González, Ramón (2003-03)
    Article
    Accés restringit per política de l'editorial
    Pentacene thin-films were obtained by thermal evaporation in high vacuum of a pure (98%) commercially available source. All the samples were grown at room temperature (25 °C) and high deposition rates (>20 Å/s) on Corning ...
  • Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films 

    Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Vetter, Michael; Alcubilla González, Ramón; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2003-05)
    Article
    Accés restringit per política de l'editorial
    In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination ...
  • Surface passivation of p-type crystalline Si by plasma enhanced vapour deposited amorphous SiCx Films 

    Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Puigdollers i González, Joaquim; Cuevas, A; Alcubilla González, Ramón (2001-10)
    Article
    Accés restringit per política de l'editorial
    Excellent passivation properties of intrinsic amorphous silicon carbide (a-SiCx:H) films deposited by plasma enhanced chemical vapor deposition on single-crystalline silicon (c-Si) wafers have been obtained. The dependence ...