Exploració per autor "Martín García, Isidro"
Ara es mostren els items 1-20 de 117
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2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells
Calle Martín, Eric; Carrió, David; Ortega Villasclaras, Pablo Rafael; von Gastrow, Guillaume; Savin, Hele; Martín García, Isidro; Alcubilla González, Ramón (WIP Renewable Energies, 2016)
Comunicació de congrés
Accés obertBlack silicon (b-Si) reduces drastically light reflectance in the front side of c-Si solar cells to values near zero for the whole absorbed solar spectrum. In this work, we apply 2D and 3D simulations to explore the ... -
3D simulations of back-contact back-junction c-Si(P) solar cells with doped point contacts
Carrió Díaz, David; Ortega Villasclaras, Pablo Rafael; López, Gema; López González, Juan Miguel; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2013)
Text en actes de congrés
Accés restringit per política de l'editorialThe back-contact back-junction BC-BJ solar cell concept is a promising photovoltaic structure for both laboratory and industrial c-Si solar cells. High efficiency devices based on this concept have been reported in the ... -
3D simulations of interdigitated back-contacted crystalline silicon solar cells on thin substrates
Jin, Chen; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Calle Martín, Eric; Alcubilla González, Ramón (2018-06-01)
Article
Accés obertInterdigitated back contact technology is a promising candidate to be applied to thin crystalline silicon solar cells because of its simpler one-side interconnection while allowing a more flexible front surface treatment. ... -
3D TCAD modeling of laser processed c-Si solar cells
López González, Juan Miguel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2015)
Text en actes de congrés
Accés restringit per política de l'editorialThis paper presents an 3D TCAD model of crystalline Silicon (c-Si) solar cells. Physical parameters used in the model are discussed. Simulation results are compared to experimental current-voltage curves and solar cell ... -
Advances in a baseline process towards high efficiency c-Si solar cell fabrication
Alcubilla González, Ramón; Ortega Villasclaras, Pablo Rafael; López, G.; Martín García, Isidro; Bermejo Broto, Sandra; Blanqué, Servane; García Molina, Francisco Miguel; Orpella García, Alberto; Voz Sánchez, Cristóbal (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
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Accés obert -
An IBC solar cell for the UPC CubeSat-1 mission
Ortega Villasclaras, Pablo Rafael; Jové Casulleras, Roger; Pedret, A; Gonzalvez, G.; López Rodríguez, Gema; Martín García, Isidro; Domínguez Pumar, Manuel; Alcubilla González, Ramón; Camps Carmona, Adriano José (Institute of Electrical and Electronics Engineers (IEEE), 2013)
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Accés restringit per política de l'editorialIn this work the fabrication and electrical characterization of interdigitated back contact IBC solar cells is shown. These solar cells have been specifically designed for a CubeSat based satellite under developement at ... -
Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes
Marsal Garví, Lluís F.; Martín García, Isidro; Pallarés Marzal, Josep; Orpella García, Alberto; Alcubilla González, Ramón (American Institute of Physics, 2003-08-15)
Article
Accés restringit per política de l'editorialP1-type hydrogenated amorphous silicon–carbon (a-Si12xCx :H) on n-type crystalline silicon (c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal annealing on the electrical ... -
Application of quasi-steady-state photoconductance technique to lifetime measurements on crystalline germanium substrates
Martín García, Isidro; Alcañiz, A.; Jiménez Pagán, Alba; López Rodríguez, Gema; del Cañizo Nadal, Carlos; Datas Medina, Alejandro (2020-07-01)
Article
Accés obertSimilar to other high quality crystalline absorbers, an accurate knowledge of surface passivation of crystalline germanium (c-Ge) substrates is crucial for a straightforward improvement of photovoltaic device performance. ... -
Atomic layer deposition of vanadium oxide films for crystalline silicon solar cells
Ros Costals, Eloi; Masmitjà Rusiñol, Gerard; Almache Hernández, Rosa Estefanía; Pusay Villarroel, Benjamín Andrés; Tiwari, Kunal Jogendra; Saucedo Silva, Edgardo Ademar; Justin Raj, Chellan; Chul Kim, Byung; Puigdollers i González, Joaquim; Martín García, Isidro; Voz Sánchez, Cristóbal; Ortega Villasclaras, Pablo Rafael (Royal Society of Chemistry (RSC), 2022)
Article
Accés obertTransition metal oxides (TMOs) are promising materials to develop selective contacts on high-efficiency crystalline silicon solar cells. Nevertheless, the standard deposition technique used for TMOs is thermal evaporation, ... -
Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells
López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Voz Sánchez, Cristóbal; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2015-08-28)
Article
Accés obertAbstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as ... -
Bifacial heterojunction silicon solar cells by Hot-Wire CVD with open circuit voltage exceeding 600 mV
Voz Sánchez, Cristóbal; Muñoz Cervantes, Delfina; Fonrodona, Marta; Martín García, Isidro; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Escarré, Jordi; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2006-07)
Article
Accés restringit per política de l'editorialDouble-sided (bifacial) heterojunction silicon solar cells have been fabricated by Hot-Wire CVD on both p- and n-type crystalline silicon substrates. In these devices, doped microcrystalline silicon layers are combined ... -
Black ultra-thin crystalline silicon wafers reach the 4n2 absorption limit–application to IBC solar cells
Garin Escriva, Moises; Pasanen, Toni P.; López Rodríguez, Gema; Vähänissi, Ville; Chen, Kexun; Martín García, Isidro; Savin, Hele (2023-09-27)
Article
Accés obertCutting costs by progressively decreasing substrate thickness is a common theme in the crystalline silicon photovoltaic industry for the last decades, since drastically thinner wafers would significantly reduce the ... -
Boron diffused emitters passivated with Al2O3 films
Masmitjà Rusiñol, Gerard; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Calle Martín, Eric; García Molina, Francisco Miguel; Martín García, Isidro; Orpella García, Alberto; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2013)
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Accés restringit per política de l'editorialIn this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ... -
c-Si solar cells based on laser-processed dielectric films
Martín García, Isidro; Colina Brito, Mónica Alejandra; Coll Valentí, Arnau; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (2014-09)
Article
Accés restringit per política de l'editorialThis paper shows an innovative and low temperature fabrication technology for crystalline silicon (c-Si) solar cells where the highly-doped regions are punctually defined through laser processed dielectric films. ... -
Células fotovoltaicas con un rendimiento del 20.5%
Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (Grupo Acorde Comunicación (GAC), 2011-03-01)
Article
Accés restringit per política de l'editorialUn grupo de investigadores de la Universitat Politècnica de Catalunya (UPC) han desarrollado un proceso de fabricación que permite obtener rendimientos de conversión fotovoltaicos del 20,5%. Esto supone una mejora sustancial ... -
Characterization of a-Si:H/c-Si interfaces by effective-lifetime measurements
Garin Escriva, Moises; Rau, U; Bredle, W; Martín García, Isidro; Alcubilla González, Ramón (American Institute of Physics (AIP), 2005-11)
Article
Accés restringit per política de l'editorialThis article studies theoretically and experimentally the recombination at the amorphous/crystalline silicon interface of a heterojunction with intrinsic thin layer (HIT) structure without metallization. We propose a ... -
Charge trapping control in MOS capacitors
Domínguez Pumar, Manuel; Bheesayagari, Chenna Reddy; Gorreta Mariné, Sergio; López Rodríguez, Gema; Martín García, Isidro; Blokhina, Elena; Pons Nin, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2016-12-26)
Article
Accés obertThis paper presents an active control of C-V characteristic for MOS capacitors based on Sliding Mode control and sigma-delta-modulation. The capacitance of the device at a certain voltage is measured periodically and ... -
“Cold” process for IBC c-Si solar cells fabrication
López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Voz Sánchez, Cristóbal; Orpella García, Alberto; Alcubilla González, Ramón (Elsevier, 2016)
Comunicació de congrés
Accés obert -
Crystalline silicon solar cells beyond 20% efficiency
Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (IEEE Press. Institute of Electrical and Electronics Engineers, 2011)
Text en actes de congrés
Accés obert—This paper describes a fabrication process to obtain high efficiency c-Si cells (> 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have ... -
Crystalline silicon surface passivation by amorphous silicon carbide films
Vetter, Michael; Martín García, Isidro; Ferré Tomas, Rafel; Garin Escriva, Moises; Alcubilla González, Ramón (2006-10)
Article
Accés restringit per política de l'editorialThis article reviews the surface passivation of n- and p-type crystalline silicon by hydrogenated amorphous silicon carbide films, which provide surface recombination velocities in the range of 10 cm s-1. Films are deposited ...