Ara es mostren els items 1-20 de 150

    • 3D simulations of back-contact back-junction c-Si(P) solar cells with doped point contacts 

      Carrió Díaz, David; Ortega Villasclaras, Pablo Rafael; López, Gema; López González, Juan Miguel; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2013)
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      The back-contact back-junction BC-BJ solar cell concept is a promising photovoltaic structure for both laboratory and industrial c-Si solar cells. High efficiency devices based on this concept have been reported in the ...
    • A critical analysis on the role of back surface passivation for a-Si/c-Si heterojunction solar cells 

      Chatterji, N; Khatavkar, Sanchit; Voz Sánchez, Cristóbal; Morales Vilches, Ana Belén; Puigdollers i González, Joaquim; Mohan Arora, Brij; Antony, Aldrin; Naip, Praadep R (Institute of Electrical and Electronics Engineers (IEEE), 2014)
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      Back surface passivation is a well-known method to reduce carrier recombination and hence improves the efficiency of crystalline silicon solar cells. In this manuscript, we critically analyze the role of this process for ...
    • A prototype reactor for highly selective solar-driven CO2 reduction to synthesis gas using nanosized earth-abundant catalysts and silicon photovoltaics 

      Urbain, Félix; Tang, Pengyi; Carretero González, Nina Maga; Andreu, Teresa; Gerling Sarabia, Luis Guillermo; Voz Sánchez, Cristóbal; Arbiol Cobos, Jordi; Morante Lleonart, Joan Ramon (2017-10)
      Article
      Accés obert
      The conversion of carbon dioxide (CO2) into value-added chemicals and fuels, preferably using renewable energy and earth-abundant materials, is considered a key priority for future energy research. In this work, a bias-free ...
    • A self-branched lamination of hierarchical patronite nanoarchitectures on carbon fiber cloth as novel electrode for ionic liquid electrolyte-based high energy density supercapacitors 

      Manikandan, Ramu; Justin Raj, Chellan; Nagaraju, Goli; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal (2019-11-14)
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      Accés obert
      The developments of rationally designed binder-free metal chalcogenides decorated flexible electrodes are of paramount importance for advanced energy storage devices. Herein, binder-free patronite (VS4) flower-like ...
    • Advances in a baseline process towards high efficiency c-Si solar cell fabrication 

      Alcubilla González, Ramón; Ortega Villasclaras, Pablo Rafael; López, G.; Martín García, Isidro; Bermejo Broto, Sandra; Blanqué, Servane; García Molina, Francisco Miguel; Orpella García, Alberto; Voz Sánchez, Cristóbal (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
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    • Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition 

      Dosev, D K; Puigdollers i González, Joaquim; Orpella García, Alberto; Voz Sánchez, Cristóbal; Fonrodona, Marta; Soler Vilamitjana, David; Marsal, L F; Pallarès Marzal, Josep; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2001-02)
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      Accés obert
      The stability under gate bias stress of unpassivated thin film transistors was studied by measuring the transfer and output characteristics at different temperatures. The active layer of these devices consisted of in ...
    • Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/ n -Si Schottky diode 

      Mahato, Somnath; Biswas, Debaleen; Gerling Sarabia, Luis Guillermo; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim (2017-08-01)
      Article
      Accés obert
      Electronic properties of Au/V2O5/n-Si Schottky device have been investigated by temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements ranging from 300 K to 150 K. Ideality factor (n) and ...
    • Analysis of the dynamic short-circuit resistance in organic bulk-heterojunction solar cells: relation to the charge carrier collection efficiency 

      Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Asensi López, José Miguel; Galindo Lorente, Sergi; Cheylan, S.; Pacios, R.; Ortega Villasclaras, Pablo Rafael; Alcubilla González, Ramón (2013-06)
      Article
      Accés restringit per política de l'editorial
      This work studies the charge carrier collection efficiency in organic bulk-heterojunction solar cells based on polymer:fullerene blends. An equivalent circuit with a specific recombination term is proposed to describe the ...
    • Atomic layer deposition of vanadium oxide films for crystalline silicon solar cells 

      Ros Costals, Eloi; Masmitjà Rusiñol, Gerard; Almache Hernández, Rosa Estefanía; Pusay Villarroel, Benjamín Andrés; Tiwari, Kunal Jogendra; Saucedo Silva, Edgardo Ademar; Justin Raj, Chellan; Chul Kim, Byung; Puigdollers i González, Joaquim; Martín García, Isidro; Voz Sánchez, Cristóbal; Ortega Villasclaras, Pablo Rafael (Royal Society of Chemistry (RSC), 2022)
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      Accés obert
      Transition metal oxides (TMOs) are promising materials to develop selective contacts on high-efficiency crystalline silicon solar cells. Nevertheless, the standard deposition technique used for TMOs is thermal evaporation, ...
    • Back junction n-type silicon heterojunction solar cells with V2O5 hole-selective contact 

      Gerling Sarabia, Luis Guillermo; Masmitjà Rusiñol, Gerard; Voz Sánchez, Cristóbal; Ortega Villasclaras, Pablo Rafael; Puigdollers i González, Joaquim; Alcubilla González, Ramón (Elsevier, 2016)
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    • Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells 

      López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Voz Sánchez, Cristóbal; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2015-08-28)
      Article
      Accés obert
      Abstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as ...
    • Bifacial heterojunction silicon solar cells by Hot-Wire CVD with open circuit voltage exceeding 600 mV 

      Voz Sánchez, Cristóbal; Muñoz Cervantes, Delfina; Fonrodona, Marta; Martín García, Isidro; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Escarré, Jordi; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2006-07)
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      Accés restringit per política de l'editorial
      Double-sided (bifacial) heterojunction silicon solar cells have been fabricated by Hot-Wire CVD on both p- and n-type crystalline silicon substrates. In these devices, doped microcrystalline silicon layers are combined ...
    • Boron diffused emitters passivated with Al2O3 films 

      Masmitjà Rusiñol, Gerard; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Calle Martín, Eric; García Molina, Francisco Miguel; Martín García, Isidro; Orpella García, Alberto; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2013)
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      In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ...
    • Células fotovoltaicas con un rendimiento del 20.5% 

      Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (Grupo Acorde Comunicación (GAC), 2011-03-01)
      Article
      Accés restringit per política de l'editorial
      Un grupo de investigadores de la Universitat Politècnica de Catalunya (UPC) han desarrollado un proceso de fabricación que permite obtener rendimientos de conversión fotovoltaicos del 20,5%. Esto supone una mejora sustancial ...
    • Characterization and application of a-SiCx:H films for the passivation of the c-Si surface 

      Martín Campos, Ignacio Clemente; Vetter, M; Orpella García, Alberto; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Marsal, L F; Pallarès Marzal, Josep; Alcubilla González, Ramón (2002-01)
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      Accés restringit per política de l'editorial
      In this work we investigate the effects of typical thermal treatments on c-Si surface passivation by intrinsic a-SiCx:H films. First, a forming gas anneal (FGA), (400 °C, 30 min in H2/N2) is applied resulting in an improvement ...
    • Characterization of bifacial heterojunction Silicon solar cells obtained by Hot-Wire CVD 

      Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Fonrodona, Marta; Garin Escriva, Moises; Orpella García, Alberto; Vetter, Michael; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, F; Bertoeu, J; Andreu Batallé, Jordi (2006-07)
      Article
      Accés restringit per política de l'editorial
      In this work, we study bifacial heterojunction silicon solar cells fabricated by hot-wire CVD on both p- and n-type crystalline silicon substrates. In these devices, hydrogenated microcrystalline silicon doped layers are ...
    • Characterization of transition metal Oxide/Silicon heterojunctions for solar cell applications 

      Gerling Sarabia, Luis Guillermo; Mahato, Somnath; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Puigdollers i González, Joaquim (2015-10-09)
      Article
      Accés obert
      During the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides ...
    • “Cold” process for IBC c-Si solar cells fabrication 

      López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Voz Sánchez, Cristóbal; Orpella García, Alberto; Alcubilla González, Ramón (Elsevier, 2016)
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    • Comparison between the density-of-states of picene transistors measured in air and under vacuum 

      Voz Sánchez, Cristóbal; Marsal, Albert; Moreno Sierra, César; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2012-01)
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      Accés restringit per política de l'editorial
      Picene has recently attracted much attention as the active layer in organic thin-film transistors because of its good performance in air. In this work, we have fabricated picene thin-film transistors that exhibit field-effect ...
    • Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors 

      Marsal Vinade, Albert; Carreras Seguí, Paz; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Galindo Lorente, Sergi; Alcubilla González, Ramón; Bertomeu Balaguero, Joan; Antony, Aldrin (2014-03-31)
      Article
      Accés restringit per política de l'editorial
      In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced ...