Ara es mostren els items 1-20 de 31

  • 3D TCAD modeling of laser processed c-Si solar cells 

    López González, Juan Miguel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2015)
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    This paper presents an 3D TCAD model of crystalline Silicon (c-Si) solar cells. Physical parameters used in the model are discussed. Simulation results are compared to experimental current-voltage curves and solar cell ...
  • Advances in a baseline process towards high efficiency c-Si solar cell fabrication 

    Alcubilla González, Ramón; Ortega Villasclaras, Pablo Rafael; López, G.; Martín García, Isidro; Bermejo Broto, Sandra; Blanqué, Servane; García Molina, Francisco Miguel; Orpella García, Alberto; Voz Sánchez, Cristóbal (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
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  • Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes 

    Marsal Garví, Lluís F.; Martín García, Isidro; Pallarés Marzal, Josep; Orpella García, Alberto; Alcubilla González, Ramón (American Institute of Physics, 2003-08-15)
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    Accés restringit per política de l'editorial
    P1-type hydrogenated amorphous silicon–carbon (a-Si12xCx :H) on n-type crystalline silicon (c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal annealing on the electrical ...
  • Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells 

    López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Voz Sánchez, Cristóbal; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2015-08-28)
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    Abstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as ...
  • Boron diffused emitters passivated with Al2O3 films 

    Masmitja Rusinyol, Gerard; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Calle Martín, Eric; García Molina, Francisco Miguel; Martín García, Isidro; Orpella García, Alberto; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2013)
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    In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ...
  • c-Si solar cells based on laser-processed dielectric films 

    Martín García, Isidro; Colina Brito, Mónica Alejandra; Coll Valentí, Arnau; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (2014-09)
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    Accés restringit per política de l'editorial
    This paper shows an innovative and low temperature fabrication technology for crystalline silicon (c-Si) solar cells where the highly-doped regions are punctually defined through laser processed dielectric films. ...
  • Células fotovoltaicas con un rendimiento del 20.5% 

    Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (Grupo Acorde Comunicación (GAC), 2011-03-01)
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    Un grupo de investigadores de la Universitat Politècnica de Catalunya (UPC) han desarrollado un proceso de fabricación que permite obtener rendimientos de conversión fotovoltaicos del 20,5%. Esto supone una mejora sustancial ...
  • Crystalline silicon solar cells beyond 20% efficiency 

    Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (IEEE Press. Institute of Electrical and Electronics Engineers, 2011)
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    —This paper describes a fabrication process to obtain high efficiency c-Si cells (> 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have ...
  • DopLaCell: a new c-Si solar cell based on laser processing of dielectric films 

    Martín García, Isidro; López González, Juan Miguel; Colina Brito, Mónica Alejandra; Orpella García, Alberto; Alcubilla González, Ramón (2013)
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    In this paper we introduce a new crystalline silicon (c-Si) solar cell fabrication technology based on the laser processing of dielectric films to create all the highly-doped regions. We call it DopLaCell (Doped by Laser ...
  • Emitter formation using laser doping technique on n- and p-type c-Si substrates 

    López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Colina Brito, Mónica Alejandra; Voz Sánchez, Cristóbal; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2015-05-01)
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    In this work laser doping technique is used to create highly-doped regions defined in a point-like structure to form n+/p and p+/n junctions applying a pulsed Nd-YAG 1064 nm laser in the n ...
  • Experimental determination of base resistance contribution for point-like contacted c-Si solar cells using impedance spectroscopy analysis 

    Orpella García, Alberto; Martín García, Isidro; López González, Juan Miguel; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2015-10)
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    One of the most common strategies in high-efficiency crystalline silicon (c-Si) solar cells for the rear surface is the combination of a dielectric passivation with a point-like contact to the base. In such devices, the ...
  • High efficiency interdigitated back-contact c-Si solar cells 

    Calle Martín, Eric; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Martín García, Isidro; Carrió Díaz, David; Voz Sánchez, Cristóbal; Orpella García, Alberto; Puigdollers i González, Joaquim; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2015)
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    In this work we describe a baseline fabrication process of interdigitated-back-contact c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+ regions at the backside, with ...
  • Improvement of crystalline silicon surface passivation by hidrogen plasma treatment 

    Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Kharchenko, A.V.; Roca i Cabarrocas, Pere (American Institute of Physics, 2004-03-01)
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    A completely dry low-temperature process has been developed to passivate 3.3 Ωcm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just ...
  • Interdigitated back contacted c-Si(p) solar cells with photovoltaic efficiencies beyond 22% 

    Calle Prado, Eric; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Martín García, Isidro; Carrió, David; Masmitjà Rusiñol, Gerard; Voz Sánchez, Cristóbal; Orpella García, Alberto; Puigdollers i González, Joaquim; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2017)
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    In this work we show a baseline fabrication process of interdigitated back contacted IBC c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+/n++ regions at the back side, ...
  • Laser processing of Al2O3/a-SiCx:H stacks: a feasible solution for the rear surface of high-efficiency p-type c-Si solar cells 

    Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Colina, Monica; Orpella García, Alberto; López, Gema; Alcubilla González, Ramón (2012-04-26)
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    We explore the potential of laser processing aluminium oxide (Al2O3)/amorphous silicon carbide (a-SiCx:H) stacks to be used at the rear surface of p-type crystalline silicon (c-Si) solar cells. For this stack, excellent ...
  • Laser-fired contact optimization in c-Si solar cells 

    Alcubilla González, Ramón; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Martín García, Isidro; Colina, M.; López Rodríguez, Gema; Voz Sánchez, Cristóbal; Sánchez, Isabel; Molpeceres, Carlos (2011-04-15)
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    In this work we study the optimization of laser-fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process ...
  • Low recombination n+ regions created by n+ c-Si epitaxial layers and laser processing of phosphorus-doped SiCx films 

    Martín García, Isidro; Colina Brito, Mónica Alejandra; Orpella García, Alberto; Voz Sánchez, Cristóbal; De Vecchi, S.; Desrues, T.; Abolmasov, S.; Roca i Cabarrocas, P.; Alcubilla González, Ramón (2012)
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  • N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks 

    Orpella García, Alberto; Blanqué, Servane; Roiati, V.; Martín García, Isidro; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
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    This paper studies the passivation of industrially textured deep silicon emitters using amorphous silicon carbonitride layers in stack configuration, deposited by plasma enhanced chemical vapor deposition. With this ...
  • Numerical simulations of rear point-contacted solar cells pn 2.2 Wcm p-type c-Si substrates 

    López González, Juan Miguel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (2013-07)
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    Rear surface of high-efficiency crystalline silicon solar cells is based on a combination of dielectric passivation and point-like contacts. In this work, we develop a 3D model for these devices based on 2.2 Ωcm p-type ...
  • Ohmic contacts fabricated on moderately doped p-type GaAs by sputtering deposition and a laser-firing process 

    Boronat Moreiro, Alfredo; Silvestre Bergés, Santiago; Orpella García, Alberto (2013-09-12)
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    A novel approach is used to achieve ohmic contacts on moderately doped p-type GaAs substrates. A laser-firing process is used instead of the conventional annealing step. The morphology of the crater created by the laser-firing ...