Ara es mostren els items 1-20 de 42

    • A 250-ps integrated ultra-wideband timed array beamforming receiver in 0.18 um CMOS 

      Aghazadeh Dafsari, Seyed Rasoul; Martínez García, Herminio; Aragonès Cervera, Xavier; Saberkari, Alireza (Institute of Electrical and Electronics Engineers (IEEE), 2020)
      Comunicació de congrés
      Accés obert
      This paper presents a 4-channel ultra-wideband (UWB) timed array beamforming receiver designed in a standard 0.18-um CMOS technology. The proposed timed array receiver achieves a maximum delay of 250 ps at the maximum beam ...
    • A comparison between grounded and floating shield inductors for mmW VCOs 

      González Jiménez, José Luis; Aragonès Cervera, Xavier; Molina Garcia, Marc Manel; Martineau, Baudouin; Belot, Didier (2010)
      Text en actes de congrés
      Accés obert
      A floating-shield inductor implemented in CMOS process is compared with a conventional patterned ground shield inductor for the implementation of a LC voltage controlled oscillator (VCO) operating at mmW frequencies. ...
    • A low-power RF front-end for 2.5 GHz receivers 

      Moreno Boronat, Lidia Ana; Gómez, D; González Jiménez, José Luis; Mateo Peña, Diego; Aragonès Cervera, Xavier; Berenguer, R; Solar, H (Institute of Electrical and Electronics Engineers (IEEE), 2008)
      Text en actes de congrés
      Accés obert
      This paper presents a low power and low cost front end for a direct conversion 2.5 GHz ISM band receiver composed of a 16 kV HBM ESD protected LNA, differential Gilbert-cell mixers, and high-pass filters for DC offset ...
    • A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI 

      Diaz Fortuny, Javier; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Castro López, Rafael; Roca Moreno, Elisenda; Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Mateo Peña, Diego; Fernández Fernández, Francisco V.; Nafría Maqueda, Montserrat (2018-01-01)
      Article
      Accés obert
      Statistical characterization of CMOS transistor variability phenomena in modern nanometer technologies is key for accurate end-of-life prediction. This paper presents a novel CMOS transistor array chip to statistically ...
    • Aging compensation in a class-A high-frequency amplifier with DC temperature measurements 

      Altet Sanahujes, Josep; Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Gisbert Beguer, Xavier; Martínez Domingo, Sergio; Mateo Peña, Diego (Multidisciplinary Digital Publishing Institute (MDPI), 2023-08-10)
      Article
      Accés obert
      One of the threats to nanometric CMOS analog circuit reliability is circuit performance degradation due to transistor aging. To extend circuit operating life, the bias of the main devices within the circuit must be adjusted ...
    • Aging in CMOS RF linear power amplifiers: an experimental study 

      Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Crespo Yepes, Albert; Mateo Peña, Diego; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (IEEE Microwave Theory and Techniques Society, 2021-02-01)
      Article
      Accés obert
      An extensive experimental analysis of the hot carrier injection (HCI) and bias temperature instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article. Two different 2.45-GHz PA topologies ...
    • Aging in CMOS RF linear power amplifiers: experimental comparison and modeling 

      Aragonès Cervera, Xavier; Mateo Peña, Diego; Barajas Ojeda, Enrique; Crespo-Yepes, A.; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2019)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      This paper characterizes experimentally the aging degradation experienced by two different 2.45 GHz power amplifier circuits of similar performance, implemented in a 65 nm CMOS technology. Results demonstrate the importance ...
    • An ultra low-voltage RF front-end receiver for IoT devices 

      Malena, Francesco; Aragonès Cervera, Xavier; Mateo Peña, Diego; Caselli, Michele; Boni, Andrea (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      This paper presents the design of an RF receiver front-end for IoT application, integrating a low noise amplifier (LNA) and an active mixer. The circuit is designed in 28-nm FDSOI technology, to operate on the ISM 2.4-2.5 ...
    • Analysis and modelling of parasitic substrate coupling in CMOS circuits 

      Aragonès Cervera, Xavier; Moll Echeto, Francisco de Borja; Roca Adrover, Miquel; Rubio Sola, Jose Antonio (1995-10)
      Article
      Accés restringit per política de l'editorial
      Analysis of the substrate coupling in integrated circuits is done taking into account technology and layout parameters for different types and location of transistors using a device-level simulator. The noise coupling ...
    • Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology 

      Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Porti Pujal, Marc; Nafría Maqueda, Montserrat; Castro López, Rafael; Roca Moreno, Elisenda; Fernandez, Francisco V. (Institute of Electrical and Electronics Engineers (IEEE), 2018)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant ...
    • Bluetooth: circuits, sistemes i aplicacions en l'entorn de les TIC 

      Aragonès Cervera, Xavier; González, José Luis; Pérez Neira, Ana Isabel; Casadevall Palacio, Fernando José; Paradells Aspas, Josep (Universitat Politècnica de Catalunya. Institut de Ciències de l'Educació, 2005-02)
      Text en actes de congrés
      Accés obert
      En el projecte s'han implementat uns mòduls formatius, que inclouen tant una vessant teòrica com una part experimental, que permetin a un estudiant de segon cicle de la ETSETB conèixer i desenvolupar aplicacions sobre un ...
    • BPF-based thermal sensor circuit for on-chip testing of RF circuits 

      Altet Sanahujes, Josep; Barajas Ojeda, Enrique; Mateo Peña, Diego; Billong, Alexandre; Aragonès Cervera, Xavier; Perpiñà Gilabet, Xavier; Reverter Cubarsí, Ferran (Multidisciplinary Digital Publishing Institute (MDPI), 2021-01)
      Article
      Accés obert
      A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 µm complementary metal-oxide-semiconductor (CMOS) ...
    • CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging 

      Crespo Yepes, Albert; Nasarre Campo, Carles; Garsot Borras, Norbert; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Nafría Maqueda, Montserrat (2022-05-01)
      Article
      Accés restringit per política de l'editorial
      In this work, CMOS inverters are subjected to electrical stress emulating a complete operation cycle and the shifts in the performance parameters (i.e., peak current and inversion voltage) evaluated. Moreover, degradation ...
    • Contribució a l'estudi de l'acoblament per substrat en circuits integrats mixtes 

      Aragonès Cervera, Xavier (Universitat Politècnica de Catalunya, 1997-12-16)
      Tesi
      Accés obert
      L'acoblament de soroll a través del substrat en circuits integrats mixtos és un important problema que sovint limita les prestacions de la circuiteria analògica. Les característiques d'aquest tipus d'acoblament i els factors ...
    • DC temperature measurements to characterize the central frequency and 3 dB bandwidth in mmW power amplifiers 

      Aragonès Cervera, Xavier; Mateo Peña, Diego; González Jiménez, José Luis; Vidal López, Eva María; Gómez Salinas, Didac; Martineau, B; Altet Sanahujes, Josep (2015-11)
      Article
      Accés obert
      This letter shows how a temperature sensor and a simple DC voltage multimeter can be used as instruments to determine the central frequency and 3 dB bandwidth of a 60 GHz linear power amplifier (PA). Compared to previous ...
    • Desenvolupament d'un sistema de comunicacions integrat per part d'estudiants de 2on cicle de l'ETSETB de la Universitat Politècnica de Catalunya 

      González Jiménez, José Luis; Mateo Peña, Diego; Aragonès Cervera, Xavier (Universitat Politècnica de Catalunya. Institut de Ciències de l'Educació, 2005-02)
      Text en actes de congrés
      Accés obert
      El projecte ha consistit en el disseny i fabricació d’un circuit integrat que conté un receptor Bluetooth per a xarxes sense fils en una tecnologia CMOS de 0,35 m. Els objectius del projecte eren realitzar una experiència ...
    • Desenvolupament de plataformes docents per a l'adquisició de mesures i el control de processos industrials 

      Aragonès Cervera, Xavier (2006)
      Pòster (projecte CCD)
      Accés obert
    • Design of a 2.5-GHZ QVCO robust against high frequency substrate noise 

      Molina Garcia, Marc Manel; Gómez Salinas, Dídac; Aragonès Cervera, Xavier; Mateo Peña, Diego; González Jiménez, José Luis (2011-07)
      Article
      Accés restringit per política de l'editorial
      This work presents the design procedure followed to obtain a low-power voltage-controlled oscillator (VCO) robust against high-frequency substrate noise, using as a demonstrator a 2.5 GHz VCO with quadrature outputs (QVCO) ...
    • Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations 

      Barajas Ojeda, Enrique; Mateo Peña, Diego; Aragonès Cervera, Xavier; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      This paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation ...
    • Differential temperature sensors: Review of applications in the test and characterization of circuits, usage and design methodology 

      Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Altet Sanahujes, Josep (Multidisciplinary Digital Publishing Institute (MDPI), 2019-11-05)
      Article
      Accés obert
      Differential temperature sensors can be placed in integrated circuits to extract a signature ofthe power dissipated by the adjacent circuit blocks built in the same silicon die. This review paper firstdiscusses the singularity ...