Ara es mostren els items 1-20 de 98

  • 3D metallo-dielectric structures combining electrochemical and electroplating techniques 

    Hernández Díaz, David; Lange, D.; Todorov Trifonov, Trifon; Garin Escriva, Moises; García Molina, Francisco Miguel; Rodríguez Martínez, Ángel; Alcubilla González, Ramón (2010-06)
    Article
    Accés restringit per política de l'editorial
    Three-dimensional (3D) periodic nickel micro-structures with a periodicity of 4 μm and high number of structural periods were fabricated by electrodeposition. Macroporous silicon, consisting of periodic arrays of sine-wave ...
  • 3D simulations of back-contact back-junction c-Si(P) solar cells with doped point contacts 

    Carrió, D.; Ortega Villasclaras, Pablo Rafael; López, Gema; López González, Juan Miguel; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2013)
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    The back-contact back-junction BC-BJ solar cell concept is a promising photovoltaic structure for both laboratory and industrial c-Si solar cells. High efficiency devices based on this concept have been reported in the ...
  • 3D TCAD modeling of laser processed c-Si solar cells 

    López González, Juan Miguel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2015)
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    This paper presents an 3D TCAD model of crystalline Silicon (c-Si) solar cells. Physical parameters used in the model are discussed. Simulation results are compared to experimental current-voltage curves and solar cell ...
  • Advances in a baseline process towards high efficiency c-Si solar cell fabrication 

    Alcubilla González, Ramón; Ortega Villasclaras, Pablo Rafael; López, G.; Martín García, Isidro; Bermejo Broto, Sandra; Blanqué, Servane; García Molina, Francisco Miguel; Orpella García, Alberto; Voz Sánchez, Cristóbal (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
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  • All-silicon spherical-Mie-resonator photodiode with spectral response in the infrared region 

    Garin Escriva, Moises; Fenollosa Esteve, Roberto; Alcubilla González, Ramón; Shi, Lei; Marsal Garvi, Luis Francisco; Meseguer Rico, Francisco Javier (2014-03-10)
    Article
    Accés obert
    Silicon is the material of choice for visible light photodetection and solar cell fabrication. However, due to the intrinsic band gap properties of silicon, most infrared photons are energetically useless. Here, we show ...
  • An IBC solar cell for the UPC CubeSat-1 mission 

    Ortega Villasclaras, Pablo Rafael; Jové Casulleras, Roger; Pedret, A; Gonzalvez, G.; López Rodríguez, Gema; Martín García, Isidro; Domínguez Pumar, Manuel; Alcubilla González, Ramón; Camps Carmona, Adriano José (Institute of Electrical and Electronics Engineers (IEEE), 2013)
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    In this work the fabrication and electrical characterization of interdigitated back contact IBC solar cells is shown. These solar cells have been specifically designed for a CubeSat based satellite under developement at ...
  • Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon 

    von Gastrow, Guillaume; Alcubilla González, Ramón; Ortega Villasclaras, Pablo Rafael; Yli-Koski, Marko; Conesa-Boj, Sònia; Fontcuberta i Morral, Anna; Savin, Hele (2015-11)
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    Accés obert
    We demonstrate that n-type black silicon can be passivated efficiently using Atomic Layer Deposited (ALD) Al2O3, reaching maximum surface recombination velocities below 7 cm/s. We show that the low surface recombination ...
  • Analysis of the dynamic short-circuit resistance in organic bulk-heterojunction solar cells: relation to the charge carrier collection efficiency 

    Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Asensi López, José Miguel; Galindo Lorente, Sergi; Cheylan, S.; Pacios, R.; Ortega Villasclaras, Pablo Rafael; Alcubilla González, Ramón (2013-06)
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    This work studies the charge carrier collection efficiency in organic bulk-heterojunction solar cells based on polymer:fullerene blends. An equivalent circuit with a specific recombination term is proposed to describe the ...
  • Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes 

    Marsal Garví, Lluís F.; Martín García, Isidro; Pallarés Marzal, Josep; Orpella García, Alberto; Alcubilla González, Ramón (American Institute of Physics, 2003-08-15)
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    P1-type hydrogenated amorphous silicon–carbon (a-Si12xCx :H) on n-type crystalline silicon (c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal annealing on the electrical ...
  • Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells 

    López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Voz Sánchez, Cristóbal; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2015-08-28)
    Article
    Accés obert
    Abstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as ...
  • Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency 

    Savin, Hele; Repo, Päivikki; von Gastrow, Guillaume; Ortega Villasclaras, Pablo Rafael; Calle, Eric; Garin Escriva, Moises; Alcubilla González, Ramón (2015-05-18)
    Article
    Accés obert
    The nanostructuring of silicon surfaces—known as black silicon—is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might ...
  • Blackbody behaviour from spiked macroporous silicon photonic crystals 

    Vega Bru, Didac; Todorov Trifonov, Trifon; Hernández Díaz, David; Rodríguez Martínez, Ángel; Alcubilla González, Ramón (2011)
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    Photonic Crystals (PhC) are structured materials, which show very attractive optical properties. In this report, we study and discuss the reflection and emission characteristics of a “black face” Macro-porous Silicon (MpSi) ...
  • Boron diffused emitters passivated with Al2O3 films 

    Masmitja Rusinyol, Gerard; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Calle Martín, Eric; García Molina, Francisco Miguel; Martín García, Isidro; Orpella García, Alberto; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2013)
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    In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ...
  • c-Si solar cells based on laser-processed dielectric films 

    Martín García, Isidro; Colina Brito, Mónica Alejandra; Coll Valentí, Arnau; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (2014-09)
    Article
    Accés restringit per política de l'editorial
    This paper shows an innovative and low temperature fabrication technology for crystalline silicon (c-Si) solar cells where the highly-doped regions are punctually defined through laser processed dielectric films. ...
  • Catalytic membrane reactors based on macroporous silicon for hydrogen production 

    Vega Bru, Didac; Hernández Díaz, David; López, E.; Jiménez, Nuria; Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Alcubilla González, Ramón; Llorca Piqué, Jordi (2010)
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    The typology of using hydrogen as an energy carrier and its implementation in portable fuel cells has motivated a considerable research interest in the development of new efficient hydrogen production technologies. Hydrogen ...
  • Células fotovoltaicas con un rendimiento del 20.5% 

    Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (Grupo Acorde Comunicación (GAC), 2011-03-01)
    Article
    Accés restringit per política de l'editorial
    Un grupo de investigadores de la Universitat Politècnica de Catalunya (UPC) han desarrollado un proceso de fabricación que permite obtener rendimientos de conversión fotovoltaicos del 20,5%. Esto supone una mejora sustancial ...
  • Characterization of transition metal Oxide/Silicon heterojunctions for solar cell applications 

    Gerling Sarabia, Luis Guillermo; Mahato, Somnath; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Puigdollers i González, Joaquim (2015-10-09)
    Article
    Accés obert
    During the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides ...
  • Comparison between the density-of-states of picene transistors measured in air and under vacuum 

    Voz Sánchez, Cristóbal; Marsal, Albert; Moreno Sierra, César; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2012-01)
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    Accés restringit per política de l'editorial
    Picene has recently attracted much attention as the active layer in organic thin-film transistors because of its good performance in air. In this work, we have fabricated picene thin-film transistors that exhibit field-effect ...
  • Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors 

    Marsal Vinade, Albert; Carreras Seguí, Paz; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Galindo Lorente, Sergi; Alcubilla González, Ramón; Bertomeu Balaguero, Joan; Antony, Aldrin (2014-03-31)
    Article
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    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced ...
  • Controlling Plateau-Rayleigh instabilities during the reorganization of silicon macropores in the Silicon Millefeuille process 

    Garin Escriva, Moises; Jin, Chen; Cardador Maza, David; Trifonov, T.; Alcubilla González, Ramón (Macmillan Publishers, 2017-08-03)
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    Accés obert
    The reorganization through high-temperature annealing of closely-packed pore arrays can be exploited to create ultra-thin (<20 µm) monocrystalline silicon layers that can work as cheap and flexible substrates for both the ...