Ara es mostren els items 1-11 de 11

  • A comparative variability analysis for CMOS and CNFET 6T SRAM cells 

    García Almudéver, Carmen; Rubio Sola, Jose Antonio (2011)
    Text en actes de congrés
    Accés restringit per política de l'editorial
    Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon bulk CMOS technology. On the other hand, in novel technologies such as Carbon Nanotubes Field Effect Transistors (CNFETs), ...
  • A shapeshifting evolvable hardware mechanism based on reconfigurable memFETs crossbar architecture 

    Martín Martínez, Javier; García Almudéver, Carmen; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio (2014-05-05)
    Article
    Accés restringit per política de l'editorial
  • Carbon nanotube growth process-related variablity in CNFET's 

    García Almudéver, Carmen; Rubio Sola, Jose Antonio (IEEE Press. Institute of Electrical and Electronics Engineers, 2011)
    Text en actes de congrés
    Accés restringit per política de l'editorial
    In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may be a limiting factor for further miniaturizing nodes. Novel nanoscale beyond- CMOS devices are being studied such as carbon ...
  • Comparative de la tecnología electrónica convencional y la biológica: enfásis en la función de aprendizaje 

    García Almudéver, Carmen (Universitat Politècnica de Catalunya, 2008-09-22)
    Projecte/Treball Final de Carrera
    Accés obert
    En el presente proyecto, una vez realizado un amplio estudio sobre el sistema neuronal y su proceso de aprendizaje, se propone desarrollar diferentes algoritmos a partir de los cuales una máquina de estados finitos es ...
  • Impact of finfet and III-V/Ge technology on logic and memory cell behavior 

    Amat Bertran, Esteve; Calomarde Palomino, Antonio; García Almudéver, Carmen; Aymerich Capdevila, Nivard; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2013-11-20)
    Article
    Accés restringit per política de l'editorial
    In this work, we assess the performance of a ring oscillator and a DRAM cell when they are implemented with different technologies (planar CMOS, FinFET and III-V MOSFETs), and subjected to different reliability scenarios ...
  • Manufacturing variability analysis in carbon nanotube technology: a comparison with bulk CMOS in 6T SRAM scenario 

    García Almudéver, Carmen; Rubio Sola, Jose Antonio (2011)
    Text en actes de congrés
    Accés restringit per política de l'editorial
    In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may be a limiting factor for further miniaturizing nodes. New nanoscale beyond-CMOS devices are being studied such as carbon ...
  • Mitigation strategies of the variability in 3T1D cell memories scaled beyond 22nm 

    Amat Bertran, Esteve; García Almudéver, Carmen; Aymerich Capdevila, Nivard; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2012)
    Text en actes de congrés
    Accés obert
    3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability. In this contribution, we have shown that 22nm 3T1D memory cells present significant ...
  • Shape-shifting digital hardware concept: towards a new adaptive computing system 

    Rubio Sola, Jose Antonio; García Almudéver, Carmen; Martin, Javier; Crespo, A.; Rodriguez, Rosa; Nafría Maqueda, Montserrat (IEEE Press. Institute of Electrical and Electronics Engineers, 2012)
    Comunicació de congrés
    Accés restringit per política de l'editorial
    In this paper a new approach to implement adaptive hardware (AH) based on memFETs crossbar structure is presented. We report a novel computing hardware principle called Shape-Shifting Digital Hardware (SSDH) oriented ...
  • Systematic and random variability analysis of two different 6T-SRAM layout topologies 

    Amat Bertran, Esteve; Amatlle, E.; Gómez González, Sergio; Aymerich Capdevila, Nivard; García Almudéver, Carmen; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (2013-09)
    Article
    Accés obert
  • Variability and reliability analysis of carbon nanotube technology in the presence of manufacturing imperfections 

    García Almudéver, Carmen (Universitat Politècnica de Catalunya, 2014-07-29)
    Tesi
    Accés obert
    In 1925, Lilienfeld patented the basic principle of field effect transistor (FET). Thirty-four years later, Kahng and Atalla invented the MOSFET. Since that time, it has become the most widely used type of transistor in ...
  • Variability and reliability analysis of CNFET in the presence of carbon nanotube density fluctuation 

    García Almudéver, Carmen; Rubio Sola, Jose Antonio (IEEE Press. Institute of Electrical and Electronics Engineers, 2012)
    Text en actes de congrés
    Accés restringit per política de l'editorial
    Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is the presence of density variations in CNT growth. These variations are due to the lack of precise control of CNT location ...